PA2423MB
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Production Information
Applications
Bluetooth
tm
Class 1
USB Dongles
Laptops
Access Points
Cordless Piconets
Features
+22.7 dBm at 45% Power Added Efficiency
Low current 80mA typical @ Pout=+20 dBm
Temperature stability better than 1dB
Power-control and Power-down modes
Single 3.3 V Supply Operation
Temperature Rating: -40C to +85C
8 lead Exposed Pad MSOP Plastic Package
Ordering Information
Type
Package
Shipping
Method
PA2423MB
8 - MSOP
Tape and reel
Tubes -samples
PA2423MB-EV Evaluation
kit
Product Description
A monolithic, high-efficiency, silicon-germanium
power amplifier IC, the PA2423MB is designed
for class 1 Bluetooth
tm
2.4 GHz radio
applications. It delivers +22.7 dBm output power
with 45% power-added efficiency making it
capable of overcoming insertion losses of up to
2.7 dB between amplifier output and antenna
input in class 1 Bluetooth
tm
applications.
The amplifier features:
an analog control input for improving PAE at
reduced output power levels;
a digital control input for controlling power up
and power down modes of operation.
An on-chip ramping circuit provides the turn-
on/off switching of amplifier output with less than
3dB overshoot, meeting the Bluetooth
tm
specification 1.1.
The PA2423MB operates at 3.3V DC. At typical
output power level (+22.7 dBm), its current
consumption is 125 mA.
The silicon/silicon-germanium structure of the
PA2423MB and its exposed-die-pad package,
soldered to the system PCB provide high
thermal conductivity and a subsequently low
junction temperature. This device is capable of
operating at a duty cycle of 100 percent.
Functional Block Diagram
Stage 1
Stage 2
Interstage
Match
Bias Generator
Ramp
Circuitry
V
CTL
V
CC0
V
RAMP
IN
OUT/ V
CC2
V
CC1
GND
GND
DOC# 05PDS001 Rev 9
07/26/2001
Page 1 of 10
PA2423MB
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Production Information
Pin Out Diagram top view
VCTL
VRAMP
NC
IN
VCC0
VCC1
Ground
VCTL
VRAMP
NC
IN
VCC0
VCC1
NC
OUT/VCC2
1
2
3
4
5
6
7
8
Die
Pad
Pin Out Description
Pin No.
Name
Description
1
V
CTL
Controls the output level of the power amplifier. An analog control signal between
0V and Vcc varies the PA output power between minimum and maximum values
2
V
RAMP
Enable/Disable the power amplifier. A digital control signal with Vcc logic high
(power up) and 0V logic low (power down) is used to turn the device on and off.
3 NC
No
connection
4 IN
Power amplifier RF input, external input matching network with DC blocking is
required
5
V
CCO
Bias supply voltage
6
V
CC1
Stage 1 collector supply voltage, external inter-stage matching network is required
7 NC
No
connection
8
OUT/V
CC2
PA Output and Stage2 collector supply voltage, external output matching network
with DC blocking is required
Die Pad
GND
Heatslug Die Pad is ground
DOC# 05PDS001 Rev 9
07/26/2001
Page 2 of 10
PA2423MB
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Production Information
Absolute Maximum Ratings
Symbol
Parameter
Min.
Max.
Unit
V
CC
Supply Voltage
-0.3
+3.6
V
V
CTL
Control Voltage
-0.3
V
CC
V
V
RAMP
Ramping Voltage
-0.3
V
CC
V
IN
RF Input Power
+8
dBm
T
A
Operating Temperature Range
-4
0 +85
C
T
STG
Storage Temperature Range
-4
0
+150
C
T
j
Maximum Junction Temperature
+15
0
C
Operation in excess of any one of above Absolute Maximum Ratings may result in permanent damage. This
device is a high performance RF integrated circuit with ESD rating < 600V and is ESD sensitive. Handling
and assembly of this device should be at ESD protected workstations.
DC Electrical Characteristics
Conditions: V
CC0
= V
CC1
= V
CC2
= V
RAMP
= 3.3V, V
CTL
= 3.3V, P
IN
= +2dBm,T
A
=25
C, f = 2.45GHz,
Input and Output externally matched to 5
0 ,unless otherwise note
d.
Symbol
Note
Parameter
Min. Typ. Max. Unit
V
CC
Supply Voltage
3 3.3 3.6 V
I
CC
1
Supply Current (I
CC
= I
VCC0
+ I
VCC1
+I
VCC2
), V
CTL
= 3.3V
125
150
mA
ICC
temp
3
Supply Current variation over temperature from T
A
= 25
C
(-4
0C <T
A
<+8
5C)
25 %
V
CTL
PA Output Power Control Voltage Range
0
V
CC
V
I
CTL
1
Current sourced by V
CTL
Pin
200
250
A
3
Logic High Voltage
2.0 V
V
RAMP
3
Logic Low Voltage
0.8
V
I
stby
1
Leakage Current when V
ramp
= 0V, V
ctl
= high
0.5 10
A
DOC# 05PDS001 Rev 9
07/26/2001
Page 3 of 10
PA2423MB
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Production Information
AC Electrical Characteristics
Conditions
V
CC0
= V
CC1
= V
CC2
= V
RAMP
=3.3V, V
CTL
= 3.3V, PIN =+2 dBm, T
A
=25
C, f =2.45 GHz,
Input and Output externally matched to 5
0, unless otherwise noted.
Symbol
Note
Parameter
Min. Typ.
Max. Unit
f
L-U
3
Frequency Range
2400 2500
MHz
1
Output Power @ P
IN
=+2 dBm, V
CTL
= 3.3V
21 22.7 23.5 dBm
P
out
1
Output Power @ P
IN
=+2 dBm, V
CTL
=0.4V
-20 0 dBm
P
temp
3
Output Power variation over temperature (-4
0C <T
A
<+8
5C)
1 2 dB
dP
OUT
/dV
CTL
3
Control Voltage Sensitivity
120
dBm/V
PAE
Power Added Efficiency at +22.5 dBm Output Power
45 %
G
VAR
3
Gain Variation over band (2400-2500 MHz)
0.7
1.0 dB
2f, 3f, 4f, 5f
3,4
Harmonics
-35
-30
dBc
IS
21
I
OFF
2
Isolation in "OFF" State, P
IN
= +2dBm, V
RAMP
= 0V
20 25 dB
IS
12
I
2
Reverse Isolation
32 42 dB
STAB
2
Stability (P
IN
= +2dBm, Load VSWR = 6:1)
All non-harmonically related
outputs less than -50 dBc
Notes: (1) Guaranteed by production test at T
A
=25
C.
(2) Guaranteed by design only
(3) Guaranteed by design and characterization
(4) Harmonic levels are greatly affected by topology of external matching networks.
DOC# 05PDS001 Rev 9
07/26/2001
Page 4 of 10
PA2423MB
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Production Information
Typical Performance Characteristics
Test Conditions using SiGe PA2423MB-EV:
V
C
2.4
no
2.4
no
C0
=V
CC1
=V
CC2
=V
RAMP
=3.3V, V
CTL
= 3.3V, P
IN
= +2 dBm, T
A
= 25
C, f =
5GHz, Input and Output externally matched to 50
, unless otherwise
ted
.
0
=V
CC1
=V
CC2
=V
RAMP
=3.3V, V
CTL
= 3.3V, P
IN
= +2 dBm, T
A
= 25
C, f =
5GHz, Input and Output externally matched to 50
, unless otherwise
ted
.
Icc vs Frequency
60.00
70.00
80.00
90.00
100.00
110.00
120.00
130.00
140.00
2.3
2.3
2.4
2.4
2.5
2.5
2.6
2.6
2.7
Frequency (GHz)
Supply Current
(mA)
Pout vs Frequency
15
16
17
18
19
20
21
22
23
2.3
2.3
2.4
2.4
2.5
2.5
2.6
2.6
2.7
Frequency (GHz)
Output Power (dBm)
Output Power, Gain vs Input Power
(Frequency=2.45GHz)
0
5
10
15
20
25
-28
-24
-20
-16
-12
-8
-4
0
4
8
Input Power (dBm)
Output Powe
r (dBm)
5.00
10.00
15.00
20.00
25.00
30.00
Ga
in (dB)
Pout
Gain
PAE vs Input Power
0
5
10
15
20
25
30
35
40
45
50
-28
-24
-20
-16
-12
-8
-4
0
4
8
Input Power(dBm)
PAE (
%
)
DOC# 05PDS001 Rev 9
07/26/2001
Page 5 of 10
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