SE2529L
RangeChargerTM 2.4GHz Power Amplifier
63-DST-01 Rev 2.0 Nov 9/03
1 of 10
Applications
DSSS 2.4GHz WLAN (IEEE 802.11b)
OFDM 2.4GHz WLAN (IEEE 802.11g)
Access Points, PCMCIA, PC cards
2.4GHz cordless telephones
Features
Delivers industry leading output power:
+19dBm, 802.11g, 54 Mbps, EVM = 2.5%
+23dBm, 802.11b, ACPR < -32dBc
+25dBm CW P
1dB
at 3.3V
Superior harmonic performance, No band pass
filter required allowing for a lower BOM
31dB
Gain
Exceptional temperature stability
Small plastic package, 12 pin QFN
Ordering Information
Type
Package
Remark
SE2529L
Samples
SE2529L-R
12 - 4x4mm QFN
Tape and Reel
SE2529L-EK1
12 - 4x4mm QFN
Evaluation Kit
Product Description
The SE2529L is a 2.4GHz, Silicon Germanium power
amplifier designed for use in the 2.4GHz ISM band for
wireless LAN and cordless telephone applications.
For wireless LAN applications, the device meets the
system requirements of IEEE802.11g and delivers
approximately +19dBm, at an EVM of 2.5%, while
achieving an adjacent channel power of better than
26dBc @ 11MHz offset. The SE2529L meets this
performance and output power while adhering to the
FCC 15.209 restricted band requirements. For
IEEE802.11b, the SE2529L delivers approximately
+23dBm @ ACPR = -32dBc.
The SE2529L typically achieves harmonic
performance of -65dBc with the recommended
discrete integrated output match and low pass filter,
thus not requiring an expensive and larger band pass
filter.
Functional Block Diagram
Current
Mirror
Stage 1
Stage 2
Stage 3
V
CC1
V
CC2
OUT/V
CC3
I N
Current
Mirror
Current
Mirror
V
0
V
b 1
V
b 2
V
b 3
I/S
Match
I/S
Match
Figure 1: SE2529L Functional Block Diagram
SE2529L
RangeChargerTM 2.4GHz Power Amplifier
63-DST-01 Rev 2.0 Nov 9/03
2 of 10
Pin Out Diagram
SE2529L
Bottom View
SE2529L
Top View
9
8
7
1
2
3
12
11
10
4
5
6
V
CC1
V
CC2
GND
V
b3
V
b2
V
CC
0
GND
IN
V
b1
GND
OUT/V
CC3
GND
Die Pad
9
8
7
1
2
3
12
11
10
4
5
6
V
CC1
V
CC2
GND
V
b3
V
b2
V
CC
0
GND
IN
V
b1
GND
OUT/V
CC3
GND
Figure 2: SE2529L Pin-Out Diagram
Pin Out Description
Pin No.
Name
Note
Description
1 GND
Ground
2
IN
Power amplifier RF input
3 V
b1
1
Stage 1 bias
4 V
CC0
Bias supply voltage
5 V
b2
1
Stage 2 bias
6 V
b3
1
Stage 3 bias
7 GND
Ground
8 OUT/
V
CC3
PA output and Stage 3 collector supply voltage; external output matching
network with DC feed required.
9 GND
Ground
10 V
CC2
Stage 2 collector supply
11 V
CC1
Stage 1 collector supply
12 GND
Ground
Die Pad
GND
Exposed die pad; electrical and thermal ground
Notes: (1) Pin for injecting bias current refer to SiGe Semiconductor's applications support for optimum values
for particular applications.
SE2529L
RangeChargerTM 2.4GHz Power Amplifier
63-DST-01 Rev 2.0 Nov 9/03
3 of 10
Equivalent Circuit Diagram
bias
V
b 1
V
b 2
V
b 3
I N
V
CC1
V
CC2
OUT/V
CC3
Die Pad / Gnd
V
CC 0
Figure 3: SE2529L Equivalent Circuit Diagram
Evaluation Board Equivalent Circuit Diagram
V
CC
SE2529L
O / P
Match
V
b b
I / P
Match
I N
OUT/V
CC3
Figure 4: SE2529L Evaluation Board Block Diagram
SE2529L
RangeChargerTM 2.4GHz Power Amplifier
63-DST-01 Rev 2.0 Nov 9/03
4 of 10
Absolute Maximum Ratings
These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage
to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions
defined below. This device is ESD sensitive. Handling and assembly of this device should be at ESD protected
workstations.
Symbol
Definition
Min.
Max.
Unit
V
CC
Supply Voltage on V
CC0
, V
CC1
, V
CC2
and OUT/V
CC3
-0.3 +3.6
V
V
bb
Bias Voltage (V
b1,
V
b2,
V
b3
) -0.3
+3.6
V
IN
RF Input Power
+8
dBm
T
A
Operating Temperature Range
-40
+85
C
T
STG
Storage Temperature Range
-40
+150
C
T
j
Maximum Junction Temperature
+150
C
Recommended Operating Conditions
Symbol
Parameter
Min.
Max.
Unit
V
CC
Supply Voltage (V
CC0
, V
CC1
, V
CC2
, OUT/V
CC3
) 3.0
3.6
V
T
A
Ambient
Temperature
-40
85
C
DC Electrical Characteristics
802.11g DC Electrical Characteristics
Conditions: V
CC
= 3.3V, V
bb
= 2.9V T
A
= 25C, as measured on SiGe Semiconductors SE2529L-EV1 evaluation
board, unless otherwise noted. "802.11g" mode, circuit tuning/biasing optimized for "g" full rate signal.
Symbol
Parameter
Note
Min.
Typ.
Max.
Unit
I
CC
Supply Current (P
OUT
= 19 dBm, 54 Mbps
OFDM signal, 64QAM)
1 175 200 225 mA
Icc
TEMP
Supply Current variation over temperature
from T
A
= 25C (-40C < T
A
< +85C)
1 10
%
Notes: (1) I
CC
refers to the total current into V
CC0
,
V
CC1
, V
CC2
and OUT/V
cc3
802.11b DC Electrical Characteristics
Conditions: V
CC
= 3.3V, V
bb
= 2.9V, T
A
= 25C, as measured on SiGe Semiconductors SE2529L-EV1 evaluation
board, unless otherwise noted. "802.11b" mode, circuit tuning/biasing optimized for "g" full rate signal.
Symbol
Parameter
Note
Min.
Typ.
Max.
Unit
I
CC
Supply Current (P
OUT
= 23dBm, 11Mbps
CCK signal)
1 240 280 305 mA
Icc
TEMP
Supply Current variation over temperature
from T
A
= 25C (-40C < T
A
< +85C)
1 10
%
Notes: (1) I
CC
refers to the total current into V
CC0
,
V
CC1
, V
CC2
and OUT/V
cc3
SE2529L
RangeChargerTM 2.4GHz Power Amplifier
63-DST-01 Rev 2.0 Nov 9/03
5 of 10
AC Electrical Characteristics
802.11G AC Electrical Characteristics
Conditions: V
CC
= 3.3V, V
bb
= 2.9V, T
A
= 25C, f = 2.45GHz, with RF tuning optimized for 802.11g mode operation.
Symbol
Parameter
Note
Min.
Typ.
Max.
Unit
f
L-U
Frequency Range
2400
2500
MHz
P
1dB
1dB Compressed CW Output Power
1
23.5
25
28
dBm
S
21
Small Signal Gain (with output match and
harmonic filter included)
28 31 37 dB
S
21
Gain Variation over band (2400-2485 MHz)
1.0
2.0
dB
2f,3f,4f,5f Harmonics
2
-65
-55
dBc
S
21OFF
Forward Gain when PA is off,
P
IN
2dBm
3 -35 -30 dB
ACPR
Adjacent Channel Power Ratio (@ 19 dBm)
@ 11MHz offsets from carrier
@ 20MHz offsets from carrier
@ 30MHz offsets from carrier
4
-30
-42
-52
dBc
EVM
Error Vector Magnitude (@ 19dBm)
5
2.5
%
P/1MHz
Restricted band spectral power (@ 19dBm)
6
-43
dBm/Mhz
STAB Stability
(P
IN
2dBm, Load VSWR = 6:1)
All non-harmonically related outputs less than
-50 dBc/100kHz
VSWR
Tolerance to output load mismatching
10:1 (No damage)
Notes: (1) Matching networks optimized for 802.11g mode operation.
(2) With 802.11g OFDM signal at +19dBm output power.
(3) Device in standby mode by applying V
b1
, V
b2
and V
b3
< 1 V.
(4) ACPR offsets are measured at stated offsets from center of channel. Measured with spectrum analyzer
settings of 100kHz (RBW) and 30kHz (VBW).
(5) EVM measured on Agilent 89611A PSA/VSA analysis system.
(6) FCC restricted bands exist at 2310-2390 MHz and 2483.5-2500 MHz.
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