Rev. 1.1 4/01
Copyright 2001 by Silicon Laboratories
Si4133G-DS11
Si4133G
Si4123G/22G/13G/12G
D
U A L
-B
A N D
RF S
Y N T H E S I Z E R
W
I T H
I
N T E G R A T E D
VCO
S
F
O R
GSM
A N D
GPRS W
I R E L E S S
C
O M M U N I C A T I O N S
Features
Applications
Description
The Si4133G is a monolithic integrated circuit that performs both IF and
dual-band RF synthesis for GSM and GPRS wireless communications
applications. The Si4133G includes three VCOs, loop filters, reference and
VCO dividers, and phase detectors. Divider and power down settings are
programmable through a three-wire serial interface.
Functional Block Diagram
!
Dual-Band RF Synthesizers
"
RF1: 900 MHz to 1.8 GHz
"
RF2: 750 MHz to 1.5 GHz
!
IF Synthesizer
"
IF: 500 MHz to 1000 MHz
!
Integrated VCOs, Loop Filters,
Varactors, and Resonators
!
Minimal External Components
Required
!
Fast Settling Time: 140
s
!
Low Phase Noise
!
Programmable Power Down Modes
!
1 A Standby Current
!
18 mA Typical Supply Current
!
2.7 V to 3.6 V Operation
!
Packages: 24-Pin TSSOP and
28-Pin MLP
!
GSM, DCS1800, and PCS1900
Cellular Telephones
!
GPRS Data Terminals
!
HSCSD Data Terminals
IFO UT
IFLA
IFLB
R FLC
R FLD
R FLA
R FLB
R FOU T
XIN
PW DN B
SDATA
SCLK
SEN B
IF
R F2
R F1
65
AUXOU T
N
N
N
Phase
D etector
Phase
D etector
Phase
D etector
22-bit
D ata
R egister
Serial
Interface
Pow er
D ow n
C ontrol
R eference
Am plifier
Test
Mux
Patents pending
Ordering Information:
See page 28.
Pin Assignments
Si4133G-BT
Si4133G-BM
Si4133G-BT
SC LK
SD ATA
G ND R
R FLD
R FLC
G ND R
R FLB
R FLA
G ND R
G ND R
R FO UT
VD DR
SEN B
VD DI
IFOU T
G ND I
IFLB
IFLA
G ND D
VD DD
G ND D
XIN
PW D N B
AUXO UT
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
4
5
6
7
1
2
3
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
G N D I
IFL B
IFL A
G N D D
V D D D
G N D D
X IN
GND
R
SDA
T
A
SCLK
SENB
VDD
I
IF
O
U
T
GND
I
G N D R
R FLD
R FLC
G N D R
R FLB
R FLA
G N D R
GN
DR
GN
DR
RF
OU
T
VD
DR
AUX
OU
T
PW
D
N
B
GN
DD
Si4133G
2
Rev. 1.1
Si4133G
Rev. 1.1
3
T
A B L E
O F
C
O N T E N T S
Section
Page
Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Serial Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Setting the VCO Center Frequencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Self-Tuning Algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Output Frequencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
PLL Loop Dynamics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
RF and IF Outputs (RFOUT and IFOUT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Reference Frequency Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Power Down Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Auxiliary Output (AUXOUT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Control Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Pin Descriptions: Si4133G-BT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Pin Descriptions: Si4133G-BM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Si4133G Derivative Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Package Outline: Si4133G-BT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Package Outline: Si4133G-BM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Contact Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Si4133G
4
Rev. 1.1
Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Ambient Temperature
T
A
20
25
85
C
Supply Voltage
V
DD
2.7
3.0
3.6
V
Supply Voltages Difference
V
(V
DDR
V
DDD
),
(V
DDI
V
DDD
)
0.3
--
0.3
V
Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at 3.0 V and an operating temperature of 25C unless otherwise stated.
Table 2. Absolute Maximum Ratings
1,2
Parameter
Symbol
Value
Unit
DC Supply Voltage
V
DD
0.5 to 4.0
V
Input Current
3
I
IN
10
mA
Input Voltage
3
V
IN
0.3 to V
DD
+0.3
V
Storage Temperature Range
T
STG
55 to 150
o
C
Notes:
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. This device is a high performance RF integrated circuit with an ESD rating of < 2 kV. Handling and assembly of
this device should only be done at ESD-protected workstations.
3. For signals SCLK, SDATA, SENB, PWDNB and XIN.
Si4133G
Rev. 1.1
5
Table 3. DC Characteristics
(V
DD
= 2.7 to 3.6 V, T
A
= 20 to 85C
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Typical Supply Current
1
RF1 and IF Operating
--
18
31
mA
RF1 Mode Supply Current
1
--
13
17
mA
RF2 Mode Supply Current
1
--
12
17
mA
IF Mode Supply Current
1
--
10
14
mA
Standby Current
PWDNB = 0
--
1
--
A
High Level Input Voltage
2
V
IH
0.7 V
DD
--
--
V
Low Level Input Voltage
2
V
IL
--
--
0.3 V
DD
V
High Level Input Current
2
I
IH
V
IH
=
3.6 V,
V
DD
= 3.6 V
10
--
10
A
Low Level Input Current
2
I
IL
V
IL
=
0 V,
V
DD
=
3.6 V
10
--
10
A
High Level Output Voltage
3
V
OH
I
OH
= 500 A
V
DD
0.4
--
--
V
Low Level Output Voltage
3
V
OL
I
OH
= 500 A
--
--
0.4
V
Notes:
1. RF1 = 1.55 GHz, RF2 = 1.2 GHz, IF
=
800 MHz
2. For signals SCLK, SDATA, SENB, and PWDNB.
3. For signal AUXOUT.
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