Silan
Semiconductors
SC75823
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.1 2002.03.04
1
BLOCK DIAGRAM
QFP-64-14x14-0.8
LQFP-64-10 x 10-0.5
1/3 DUTY GENERAL-PURPOSE LCD
DRIVER
DESCRIPTION
The SC75823 is a general-purpose LCD driver that can be used
for frequency display in microprocessor-controlled radio receives
and in other display applications. In addition to being able to directly
drive up to 156 LCD segments.
FEATURES
Supports both 1/3 duty 1/2 bias and 1/3 duty 1/3 bias LCD
drive of up to 156 segments under serial data control.
Serial data input supports CCB format communication with the
system controller.
Serial data control of the power-saving mode based backup
function and all the segments forced off function.
High generality since display data is displayed directly without
decoder intervention.
The INH pin can force the display to the off state.
The LCD drive bias voltage can be provided internally or
externally.
Power supply voltage: 4.5 to 6.0V
ORDERING INFORMATION
Device
Package
SC75823A
LQFP-64-10 X 10-0.5
SC75823B
QFP-64-14 X 14-0.8
Common Driver
Latch & Driver
Shift Register
Clock
Generator
Address
Detector
V
DD2
V
DD1
INH
OSC
DI
CL
CE
V
DD
V
SS
S1
S51
S52
COM1 COM2 COM3
Silan
Semiconductors
SC75823
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.1 2002.03.04
2
PIN CONFIGURATION
S2
S4
S1
S3
S17
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16
17
18
19
20
21
22
23
24
36 35 34 33
32
31
30
29
28
27
26
25
48 47 46 45 44 43 42 41 40 39 38 37
SC75823
64
63
62
61
60
59
58
57
49
50
51
52
53
54
55
56
S5
S6
S7
S8
S9
S1
0
S1
1
S1
2
S1
3
S1
4
S1
5
S1
6
S19
S18
S20
S21
S22
S23
S24
S25
S26
S27
S28
S29
S30
S31
S32
S3
3
S3
4
S3
5
S3
6
S3
7
S3
8
S3
9
S4
0
S4
1
S4
2
S4
3
S4
4
S4
5
S4
6
S4
7
S4
8
S49
S50
S51
S52
COM1
COM2
COM3
V
DD
INH
V
DD1
V
DD2
OSC
CE
CL
DI
V
SS
ABSOLUTE MAXIMUM RATINGS
(Tamb=25
C, V
SS
=0 V)
Characteristics
Symbol
Value
Unit
Maximum Supply Voltage
V
DDmax
-0.3 to +6.5
V
V
IN1
-0.3 to +6.5
V
Input Voltage
V
IN2
-0.3 to V
DD
+0.3
V
Output Voltage
V
OUT
-0.3 to V
DD
+0.3
V
I
OUT1
300
A
Output Current
I
OUT2
3
mA
Allowable Power Dissipation
P
Dmax
200
mW
Operating Temperature
T
opr
-40 to +85
C
Storage Temperature
T
stg
-55 to 125
C
Silan
Semiconductors
SC75823
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.1 2002.03.04
3
ALLOWABLE OPERATING RANGE
(Tamb=-40 to +85
C, V
SS
=0V)
ELECTRICAL CHARACTERISTICS
(To be continued)
Characteristics
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Supply Voltage
V
DD
V
DD
4.5
6.0
V
V
DD1
V
DD1
2/3V
DD
6.0
V
Input Voltage
V
DD2
V
DD2
1/3V
DD
6.0
V
Input High level Voltage
V
IH
CE, CL, DI,
INH
4.0
6.0
V
Input Low Level Voltage
V
IL
CE, CL, DI,
INH
0
0.7
V
Recommended External Resistance
R
OSC
OSC
47
k
Recommended External Capacitance
C
OSC
OSC
1000
pF
Guaranteed Oscillator Range
f
OSC
OSC
19
38
76
kHz
Data Setup Time
tds
CL, DI: figure 2
100
ns
Data Hold Time
tdh
CL, DI: figure 2
100
ns
CE Wait Time
tcp
CE, CL: figure 2
100
ns
CE Setup Time
tcs
CE, CL: figure 2
100
ns
CE Hold Time
tch
CE, CL: figure 2
100
ns
High-level Clock Pulse Width
t
H
CL: figure 2
100
ns
Low-level Clock Pulse Width
t
L
CL: figure 2
100
ns
Rise Time
tr
CE, CL, DI: figure 2
100
ns
Fall Time
tf
CE, CL, DI: figure 2
100
ns
INH Switching Time
t2
INH , CE: figure 3
10
s
Characteristics
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Input High Level Current
I
IH
CE, CL, DI,
INH ; V
I
=6V
5
A
Input Low Level Current
I
IL
CE, CL, DI,
INH ; V
I
=0V
-5
A
Oscillator Frequency
f
OSC
OSC;R
OSC
=47k
,
C
OSC
=1000pF
38
kHz
Hysteresis Width
V
H
CE, CL, DI,
INH ; V
DD
=5V
0.3
V
Output High Level Voltage
V
OH1
S1 to S52; I
O
=-20
A
V
DD
-1.0
V
Output Low Level Voltage
V
OL1
S1 to S52; I
O
=20
A
1.0
V
Output High Level Voltage
V
OH2
COM1 to COM3; I
O
=-100
A V
DD
-1.0
V
Output Low Level Voltage
V
OL2
COM1 to COM3; I
O
=100
A
1.0
V
V
MID1
1/2 bias, COM1 to COM3;
I
O
=
100A
1/2V
DD
1.0
V
Intermediate Level Voltage
V
MID2
1/3 bias, COM1 to COM3;
I
O
=
100A
2/3V
DD
1.0
V
Silan
Semiconductors
SC75823
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.1 2002.03.04
4
(Continued)
Note: * Except the bias voltage generation divider resistors that are built into V
DD1
and V
DD2
.(see figure 1)
Figure 1
V
DD
V
DD1
V
DD2
To the common segment driver
Except these resistors
Characteristics
Symbol
Test Condition
Min.
Typ.
Max.
Unit
V
MID3
1/3 bias, COM1 to COM3;
I
O
=
100A
1/3V
DD
1.0
V
V
MID4
1/3
bias,
S1
to
S52;
I
O
=
20A
2/3V
DD
1.0
V
Intermediate Level Voltage*
V
MID5
1/3
bias,
S1
to
S52;
I
O
=
20A
1/3V
DD
1.0
V
I
DD1
Power saving mode
5
A
I
DD2
f=38kHz, 1/2 bias, V
DD
=5V
400
800
A
I
DD3
f=38kHz, 1/3 bias, V
DD
=5V
300
600
A
I
DD2
f=38kHz, 1/2 bias, V
DD
=6V
650
1300
A
Supply Current
I
DD3
f=38kHz, 1/3 bias, V
DD
=8V
580
1200
A
Silan
Semiconductors
SC75823
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.1 2002.03.04
5
Fig 2
1.When CL is stopped at the low level
CE
CL
DI
V
IH
50%
V
IL
tH
tL
tr
tf
V
IH
V
IH
V
IL
V
IH
V
IL
tch
tcs
tcp
tds
tdh
V
IH
V
IH
V
IL
V
IL
2.When CL is stopped at the high level
CE
CL
tH
tL
V
IH
V
IL
DI
V
IH
50%
V
IL
tr
tf
V
IH
V
IL
V
IH
tcp
tcs
tch
V
IH
V
IH
V
IL
V
IL
tds
tdh
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