175 GREAT VALLEY PKWY. MALVERN, PA 19355 USA
Rev. B 10/24/01 page1 --
C786
77mm / 2200V Thyristor
PRINCIPAL RATINGS AND CHARACTERISTICS
PRINCIPAL RATINGS AND CHARACTERISTICS
PRINCIPAL RATINGS AND CHARACTERISTICS
PRINCIPAL RATINGS AND CHARACTERISTICS
PRINCIPAL RATINGS AND CHARACTERISTICS
ON-STATE CHARACTERISTIC
ON-STATE CHARACTERISTIC
ON-STATE CHARACTERISTIC
ON-STATE CHARACTERISTIC
ON-STATE CHARACTERISTIC
MECHANICAL OUTLINE
MECHANICAL OUTLINE
MECHANICAL OUTLINE
MECHANICAL OUTLINE
MECHANICAL OUTLINE
OPERATING JUNCTION TEMPERATURE RANGE
-40 to +125
o
C
. Repetitive peak off-
V
D R M
to
state and reverse
V
R R M
2200V
voltage
. Average on-state
I
T(AV)
3100A
current @T
C
=70
o
C
. Peak half cycle surge
I
T S M
8.3 ms / 10.0 ms
current for Vr = 0 V
51.0 kA / 47.5 kA
. Maximum peak recovery
I
R M
60A
current, @ 2A/ms
. On-state Voltage
V
T M
1.1V
@ I
T
=2000A
. Critical rate of rise
di/dt
125A/us
of current @V
D
=1500V
. Critical rate of rise
dv/dt
1000V/us
of off-state voltage
to 0.8V
D R M
.Turn-off time (typ)
t
q
400us
EXTERNALLY REQUIRED CLAMPING FORCE
8000 - 9000 lbs. / 35.6 - 40.0 kN
GATE DRIVE REQUIREMENTS
Open circuit voltage / short circuit current 30V / 3A
Short circuit risetime 0.5us
Minimum pulse duration 10us
0.1
1
10
100
1000
10000
THERMAL IMPEDANCE vs. ON-TIME
Zthj-c (deg C/W)
On-Time (milliseconds)
On-Time (milliseconds)
Rthj-case(dc) =
.012 degC/watt
.01
.001
.0001
.00001
.02
Type C786 reverse blocking thyristor, suitable for phase control applications, is especially de-
signed for lowest on-state voltage drop. It is intended for heavy industrial, utility and transporta-
tion service.
The silicon junction is manufactured by the proven multi-diffusion process and is supplied in an
industry standard disc-type package, ready to mount to natural or forced cooled heat dissipators
using commercially available mechanical clamping hardware.
Model No.
V
D R M
/ V
R R M
-40
o
C
0 to +125
o
C
C786LA
2100 V
2200 V
C786L
2000
2100
C786PT
1900
2000
C786PN
1800
1900
A
f
= 4.35 in (110.5 mm)
B
f
= 2.88 in (73.2 mm)
D = 1.45 in (36.8 mm)
B
B
A
2 0 5
D
CL
CL
J
1000
10000
0
1
2
3
4
5
On-state current , It (amperes)
On-state Voltage , Vt (volts)
On-state Voltage , Vt (volts)
C786ONR1
40000
Process Maximum
pulsed current
initial Tj = 125 degC
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
0
500
1000
1500
2000
2500
3000
Full Cycle Average Power
Average Power Pt(av) watts
Average Current,It(av) amperes
Average Current,It(av) amperes
5:C786WAT
@ Tj = 125 degC
120 deg Sq wave
180 deg sine wave
60 Hz
1
10
100
1
10
100
1
10
NON-REPETITIVE SUB-CYCLE SURGE RATINGS
Itsm (kA)
Pulse Base Width (half sine), msec
I2t (A2sec)
Pulse Base Width (half sine), msec
01G:ITSMREV3
E6
E6
E6
Tj = -40 to 125 C
Vr = 0
Itsm
I2t
10
100
1000
10000
10
100
1000
10000
0.1
1
10
MAXIMUM PEAK RECOVERY CURRENT
versus COMMUTATING di/dt
Irm (A)
Commutating di/dt (A/us)
Qrr (uC)
Commutating di/dt (A/us)
5:C786REC5
Qrr
Irm
C786 / T213
Rev. B 10/24/01
FULL CYCLE AVERAGE POWER at T
J
= 125
o
C
Full Cycle
180
o
120
o
average
half-sine
square wave
I
T(AV)
P
T(AV)
P
T(AV)
(A)
(W)
(W)
500
432
489
600
561
624
700
692
761
800
827
902
900
964
1044
1000
1104
1189
1200
1389
1486
1400
1684
1792
1600
1985
2108
1800
2297
2436
2000
2618
2775
2500
3465
3682
3000
4383
4682
3100
4576
4894
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