175 GREAT VALLEY PKWY. MALVERN, PA 19355 USA
Rev. A 10/17/01 page1 --
SDT200
77mm / 1800V Thyristor
PRINCIPAL RATINGS AND CHARACTERISTICS
PRINCIPAL RATINGS AND CHARACTERISTICS
PRINCIPAL RATINGS AND CHARACTERISTICS
PRINCIPAL RATINGS AND CHARACTERISTICS
PRINCIPAL RATINGS AND CHARACTERISTICS
ON-STATE CHARACTERISTIC
ON-STATE CHARACTERISTIC
ON-STATE CHARACTERISTIC
ON-STATE CHARACTERISTIC
ON-STATE CHARACTERISTIC
MECHANICAL OUTLINE
MECHANICAL OUTLINE
MECHANICAL OUTLINE
MECHANICAL OUTLINE
MECHANICAL OUTLINE
OPERATING JUNCTION TEMPERATURE RANGE
-40 to +125
o
C
. Repetitive peak off-
V
D R M
to
state and reverse
V
R R M
1800V
voltage
. Average on-state
I
T(AV)
3200A
current @T
C
=70
o
C
. Peak half cycle surge
I
T S M
8.3 ms / 10.0 ms
current for Vr = 0 V
55.0 kA / 51.0 kA
.Maximum peak recovery
I
R M
49A
current, @ 2A/ms
. On-state Voltage
V
T M
0.975V
@ I
T
=2000A
. Critical rate of rise
di/dt
125A/us
of current @V
D
=1500V
. Critical rate of rise
dv/dt
1000V/us
of off-state voltage
to 0.8V
D R M
.Turn-off time (typ)
t
q
400us
EXTERNALLY REQUIRED CLAMPING FORCE
8000 - 9000 lbs. / 35.6 - 40.0 kN
GATE DRIVE REQUIREMENTS
Open circuit voltage / short circuit current 30V / 3A
Short circuit risetime 0.5us
Minimum pulse duration 10us
0.1
1
10
100
1000
10000
THERMAL IMPEDANCE vs. ON-TIME
Zthj-c (deg C/W)
On-Time (milliseconds)
On-Time (milliseconds)
Rthj-case(dc) =
.012 degC/watt
.01
.001
.0001
.00001
.02
Type SDT200 reverse blocking thyristor, suitable for phase control applications, is especially
designed for lowest on-state voltage drop. It is intended for heavy industrial, utility and transporta-
tion service.
The silicon junction is manufactured by the proven multi-diffusion process and is supplied in an
industry standard disc-type package, ready to mount to natural or forced cooled heat dissipators
using commercially available mechanical clamping hardware.
Model No.
V
D R M
/ V
R R M
-40
o
C
0 to +125
o
C
SDT200TR
1800
1800
SDT200TP
1700
1700
SDT200TM
1600
1600
SDT200TK
1500
1500
A
f
= 4.35 in (110.5 mm)
B
f
= 2.88 in (73.2 mm)
D = 1.45 in (36.8 mm)
B
B
A
2 0 5
D
CL
CL
J
1000
10000
0
1
2
3
4
5
6
On-State Current, It (A)
On-State Voltage, Vt (volts)
On-State Voltage, Vt (volts)
01k:T200ONST
Process Maximum
Tj = 125 C
Involute Gate
60000
Pulsed Currents
0
1
2
3
4
5
0
500
1000
1500
2000
2500
3000
FULL CYCLE AVERAGE POWER
@ Tj = 125 C
60 Hz
Average Power Pt(av) (watts)
Average Current, It(av) (amperes)
Average Current, It(av) (amperes)
01k:T200PTAV
180 deg sine wave
120 deg sq wave
1
10
100
1
10
100
1
10
Non-Repetitive Sub-cycle Surge Ratings
with Commutating di/dt
Itsm, (A)
Pulse Base Width (half sine), (msec)
I2t, (A2sec)
Pulse Base Width (half sine), (msec)
01K:T200ITSM
Tj = -40 to 125 C
Vr = 0
Itsm
I2t
E6
E6
E6
10
100
1000
10000
0.1
1
10
Peak Recovery Current Relationship
with Commutating di/dt
Peak Recovery Current, Irm, (A)
Commutating di/dt, (A/us)
Commutating di/dt, (A/us)
01K:T200REC
Process Range
Tj = 125 C
Irm
Qrr
SDT200 / T200
Rev. A 10/17/01
FULL CYCLE AVERAGE POWER at T
J
= 125
o
C
Full Cycle
180
o
120
o
average
half-sine
square wave
I
T(AV)
P
T(AV)
P
T(AV)
(A)
(W)
(W)
500
423
471
600
544
599
700
699
730
800
798
865
900
929
1001
1000
1060
1140
1200
1335
1425
1400
1617
1719
1600
1907
2022
1800
2205
2336
2000
2511
2660
2500
3315
3516
3000
4177
4445
3200
4539
4840
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