SPT227
1650A, 4500V
77mm Thyristor
Features
Package
1650A, 4500V
A=4.437in, B=2.50in, C=0.797in, D=0.306in
26kA Surge Rating Capability
Notes - 1, 2 & 3
Light Weight Package
Description
Type SPT227 reverse blocking thyristor is suitable for phase control applications
A unique pilot gate and orientation of emitter shorts are employed which
promote lower plasma spreading losses and high dv/dt withstand. It is
manufactured by the proven multi-diffusion process.
MODEL RATING AVAILABILITY
The design utilizes the revolutionary "Light Silicon Sandwich" or LSS technology,
PART NUMBER
V
DRM
V
RRM
a new termination technique which eliminates heavy refractory metal as a
SPT227HK
4500
4500
substrate but still employs the alloyed anode interface necessary for high surge
SPT227HH
4400
4400
current duty. The light weight plastic package allows the insertion of liquid
SPT227HF
4300
4300
cooled chillers closer to the silicon junction. Copper inserts can be supplied for
SPT227HD
4200
4200
adjoining commercially available flat surfaced heat dissipators.
SPT227HB
4100
4100
SPT227FT
4000
4000
Limiting Characteristics and Ratings
At T
J
= 125
o
C, Unless Otherwise Specified
SYMBOL
UNITS
Repetitive Peak Off State Voltage........................................................................................................................
V
DRM
4500
V
Repetitive Peak Reverse Voltage.........................................................................................................................
V
RRM
4500
V
Average On-State Current (T
C
=70
o
C) ..............................................................................................................
I
T(AV)
1650
A
Peak Half-Cycle Non-Repetitive Surge Current ( 8.3ms / 10ms )..............................................................
I
TSM
26 / 24
kA
For Fusing ( 8.3ms / 10ms ) ......................................................................................
I
2
t
2.8 / 2.9
MA
2
s
Critical Gate Trigger Voltage ( V
D
= 12V, T
J
= 25
o
C )......................................................................................
V
GT
4.5
V
Critical Gate Trigger Current ( V
D
= 12V, T
J
= 25
o
C ) ........................................................................................
I
GT
300
mA
Non-Trigger Gate Voltage ( V
D
= 2000V ) ......................................................................................................................................
V
GD
0.8
V
Non-Trigger Gate Current ( V
D
= 2000V ) ......................................................................................................................................
I
GD
15
mA
Open Circuit Gate Voltage ........................................................................................................................................
V
OC
40
V
Short Circuit Gate Current .......................................................................................................................................
I
SS
4
A
Gate Pulse Duration and Rise Time .....................................................................................................................
10
s duration / 0.5
s rise time
Turn-Off Time (5A/
s, >100V, 400V/
s to 2000V) .............................................................................................................................................................................
Toff
400
s
Turn-On Delay (V
D
= 50%V
DRM
) ........................................................................................................................................................................................................
td
3
s
Rate of Change of Voltage ( V
D
=70% V
DRM
) .......................................................................................................
dv/dt
1000
V/
s
Rate of Change of Current ( V
D
=50% V
DRM
) .....................................................................................
di/dt
125
A/
s
Operating and Storage Temperature.....................................................................................................................
T
J
, T
STG
0 to +125
o
C
Mounting Force............................................................................................................................................................
F 6000 - 7500 lbs
Notes
1. Optional external posts dwg. # 21528332; Ni plated copper, 0.35" thick each.
2. Compressed thickness including external posts is 0.88" - 0.89" (22.35mm - 22.61mm).
3. Weight XX oz., XX lbs with posts.
Electrical Specifications
At T
J
= 125
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL TEST CONDITIONS
MIN
TYP
MAX
UNITS
Peak Off State Blocking
I
DRM
V
D
= 80%V
DRM
300
mA
Forward & Reverse Current
I
RRM
200
mA
On State Voltage
V
TM
I
T
= 2000A Pulse
1.85
V
Max. Peak Recovery Current
I
RM
di/dt = 2A/
s
Snap. S = .5-.33
62
A
Thermal Resistance
R
JC
Double Side Cooling
0.01
o
C/W
C
D
D
B
A
175 Great Valley Pkwy. Malvern, PA 19355
SPT227SPEC-2.XLS Rev. 2 7/9/2001
Limiting Performance Curves
ON-STATE CURRENT CHARACTERITIC
NON-REPETITIVE I
TSM
AND I
2
t CAPABILITY FOR FUSE COORDINATION
MAXIMUM FULL CYCLE AVERAGE POWER DISSIPATION SINE WAVE CURRENT FOR VARIOUS CONDUCTING ANGLES
PLASMA SPREADING LOSSES ARE INCLUDED.
MAXIMUM FULL CYCLE AVERAGE POWER DISSIPATION FOR THREE PHASE RECTIFIER AT SPECIFIED OVERLAP ANGLES, "
"
.
PLASMA SPREADING LOSSES ARE INCLUDED.
100
1000
10000
100000
0
1
2
3
4
5
6
7
8
9
10
On-State Voltage, Vt (volts)
On-State Current, It (A)
0
500
1000
1500
500
1000
1500
2000
Peak Current, It (A)
Full Cycle Average Power, Pav (W)
0
1000
2000
3000
4000
5000
6000
7000
8000
2000
3000
4000
5000
6000
Peak Current, It (A)
Full Cycle Average Power, Pav (W)
0
1000
2000
3000
4000
5000
6000
2000
3000
4000
5000
6000
Peak Current, It (A)
Average Power, Pavg (W)
0
500
1000
1500
500
1000
1500
2000
2500
Peak Current, It (A)
Average Power, Pavg (W)
1/f
applicable frequency
range: 50 - 60Hz
1/f
applicable frequency
range: 50 - 60Hz
1.E+03
1.E+04
1.E+05
1
2
3
4
5
6
7
8
9
10
Time base width of half sinewave (ms)
Surge Current, I
TSM
(A)
1.E+05
1.E+06
1.E+07
I
2
t, (A
2
s)
Pulse Currents
Tcase = 125
o
C
conduction angle
(deg)
180
150
120
90
60
30
180
150
120
90
60
30
conduction angle
(deg)
overlap angle
(deg)
overlap angle
(deg)
2
20
40
2
20
40
Conduction Angle = 120
o
+
120
o
+
I
T
50 / 60 Hz
Conduction Angle = 120
o
+
120
o
+
I
T
50 / 60 Hz
175 Great Valley Pkwy. Malvern, PA 19355
SPT227SPEC-2.XLS Rev. 2 7/9/2001
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