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Электронный компонент: SLD-68EBG1

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5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLD-68EBG1
Integral Infrared Rejection Filter
Planar Photodiode
Features
Planar Photodiode
Integral IR Rejection Filter
Low capacitance
Fast switching time
Low leakage current
Linear response vs irradiance
TO-46 base with epoxy dome lens
Multiple dark current ranges available
Description
This planar, passivated silicon photodiode is designed
to maximize response in the visible light spectrum of
received energy. This diode incorporates a BG filter
that rejects infrared wavelengths and approximates
the response of the human eye. Photodiodes may
operate in either photovoltaic or reverse bias mode to
provide low capacitance with fast switching speed. It
provides excellent linearity in output signal versus
light intensity.
Absolute Maximum Ratings
Storage Temperature
-20
C to +75
C
Operating Temperature
-20
C to +75
C
Soldering Temperature (3)
260
C
Dimensions in mm. (+/- 0.13)
Anode +
Cathode -
(Common to case)
Chip
Epoxy
45
25.4 Min.
5.3
4.2
2.5
0.50-0.52
Filter
Chip Size = 1.7 mm X 1.7 mm
Active Area = 2.0 sq.mm.
3.0
100
90
80
70
60
50
1.0
40
30
20
10
Half Angle = 40
Directional Sensitivity Characteristics
20
40
60
80
100 120
0.0
0.2
0.4
0.6
0.8
0.4
0.6
0.8
1.0
Electrical Characteristics
(T
A
=25
C unless otherwise noted)
Symbol
Parameter
MIN
TYP
MAX
UNITS
TEST CONDITIONS
I
SC
Short Circuit Current
7.5
11.0
A
V
R
=0V, Ee=25mW/cm
2
(1)
V
OC
Open Circuit Voltage
0.40
V
Ee=25mW/cm
2
(1)
I
D
Reverse Dark Current:
SLD-68EBG1A
100
nA
V
R
=100mV, Ee=0
SLD-68EBG1B
100
nA
V
R
=5V, Ee=0
SLD-68EBG1C
10
nA
V
R
=5V, Ee=0
SLD-68EBG1D
1
nA
V
R
=5V, Ee=0
SLD-68EBG1E
250
pA
V
R
=5V, Ee=0
C
J
Junction Capacitance
40
pF
V
R
=0, Ee=0, f=1MHz
t
R
Rise Time
1.0
s
V
R
=10V, R
L
=1k
(2)
t
F
Fall Time
1.5
s
V
R
=10V, R
L
=1k
(2)
TC
I
Temp. Coef., I
SC
+0.2
%/
C (1)
V
BR
Reverse Breakdown Voltage
50
V
I
R
=100
A
P
Maximum Sensitivity Wavelength
550
nm
R
Sensitivity Spectral Range
400
700
nm
1/2
Acceptance Half Angle
40
deg
(off center-line)
Notes: (1) Ee = light source @ 2854
K
Specifications subject to change without notice
(2) Ee = Light source @
= 580 nm
102647 REV 2
(3) >2 mm from case for <5 sec.