5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLD-68HL1
Planar Photodiode
Features
Low capacitance
Fast switching time
Low leakage current
Linear response vs irradiance
Hermetic TO-46 package with high dome lens
Multiple dark current ranges available
Description
This small area planar, passivated silicon
photodetector is designed to operate in either
photovoltaic or reverse bias mode. It provides
excellent linearity in output signal versus irradiance.
This is an ideal detector for fast rise time applications.
Absolute Maximum Ratings
Storage Temperature
-40
C to +125
C
Operating Temperature
-40
C to +125
C
Soldering Temperature (1)
260
C
Notes: (1) >2 mm from case for <5 sec.
(2) Ee = source @ 2854
K
(3) Ee = source @
= 880 nm
CATHODE
(Common to case)
Anode
Chip Size = 1.7 mm X 1.7 mm
Active Area = 2.0 sq.mm.
25.4
Min.
45
Dimensions in mm. (+/- 0.13)
1.0
5.1
4.7
0.50-0.52
5.3
2.5
Directional Sensitivity Characteristics
0.0
0.2
0.4
0.6
0.8
1.0
10
20
30
40
50
60
70
80
90
100
1.0
0.8
0.6
0.4
0
120
Half Angle = 15
20
40
60
80
100
Electrical Characteristics
(T
A
=25
C unless otherwise noted)
Symbol
Parameter
MIN
TYP
MAX
UNITS
TEST CONDITIONS
I
SC
Short Circuit Current
50
70
A
V
R
=0V, Ee=5mW/cm
2
(2)
V
OC
Open Circuit Voltage
0.40
V
Ee=5mW/cm
2
(2)
I
D
Reverse Dark Current
SLD-68HL1A
100
nA
V
R
=100mV, Ee=0
SLD-68HL1B
100
nA
V
R
=5V, Ee=0
SLD-68HL1C
10
nA
V
R
=5V, Ee=0
SLD-68HL1D
1
nA
V
R
=5V, Ee=0
SLD-68HL1E
250
pA
V
R
=5V, Ee=0
C
J
Junction Capacitance
40
pF
V
R
=0, Ee=0, f=1MHz
t
R
Rise Time
1.0
s
V
R
=10V, R
L
=1k
(3)
t
F
Fall Time
1.5
s
V
R
=10V, R
L
=1k
(3)
TC
I
Temp. Coef.
+0.2
%/
C (2)
V
BR
Reverse Breakdown Voltage
50
V
I
R
=100
A
P
Maximum Sensitivity Wavelength
930
nm
R
Sensitivity Spectral Range
400
1100
nm
1/2
Acceptance Half Angle
15
deg (off center-line)
Specifications subject to change without notice
101987 REV 2
PDF 
ZIP