Preliminary Information
Broomfield, CO 80021
1
EDS-104972 Rev A
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Phone: (800) SMI-MMIC http://www.sirenza.com
Product Description
Test Conditions:
SGC-2386Z
50-4000 MHz Silicon Germanium
Cascadable Gain Block
Product Features
Single Fixed 3V Supply
Supply Dropping Resistor not required
Patented Self-Bias Circuitry
P1dB = 10.2 dBm at 1950 MHz
IP3 = 24.3 dBm at 1950 MHz
Robust 1000V ESD, Class 1C HBM
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Sirenza Microdevices' SGC-2386Z is a high performance SiGe HBT MMIC
amplifier utilizing a Darlington configuration with a patented active bias
network. The active bias network provides stable current over temperature
and process Beta variations. Designed to run directly from a 3V supply, the
SGC-2386Z does not require a dropping resistor as compared to typical
Darlington amplifiers. The SGC-2386Z is designed for high linearity 3V gain
block applications that require small size and minimal external components.
It is internally matched to 50 ohms.
The matte tin finish on Sirenza's lead-free "Z" package is applied using a
post annealing process to mitigate tin whisker formation and is RoHS
compliant per EU Directive 2002/95. The package body is manufactured
with green molding compounds that contain no antimony trioxide or
halogenated fire retardants.
Pb
RoHS Compliant
&
Package
Green
Gain & Return Loss V
D
= 3V, I
D
= 26mA (Typ.)
0
5
10
15
20
0
1
2
3
4
Frequency (GHz)
Ga
in
(
d
B
)
-40
-30
-20
-10
0
Re
t
u
r
n
L
o
s
s
(
d
B)
S22
S21
S11
Bias Tee Data, Z
S
= Z
L
= 50 Ohms, T
L
= 25C
Symbol
Parameters
Units
Frequency
Min.
Typ.
Max.
850 MHz
16.9
1950 MHz
12.7
2400 MHz
11.4
850 MHz
10.5
1950 MHz
10.2
2400 MHz
9.9
850 MHz
23.2
1950 MHz
24.3
2400 MHz
24.7
IRL
Input Return Loss
dB
1950 MHz
21.8
ORL
Output Return Loss
dB
1950 MHz
17.6
NF
Noise Figure
dB
1930 MHz
3.7
V
D
Device Operating Voltage
V
3
I
D
Device Operating Current
mA
22
26
30
Rth, j-l
Thermal Resistance (junction to lead)
C/W
205
Small Signal Gain
G
P
1dB
Output Power at 1dB Compression
Bias Tee Data Z
S
= Z
L
= 50 Ohms Pout per tone = -5 dBm
Test Conditions: V
D
= 3.0V I
D
= 26mA Typ. T
L
= 25C OIP
3
Tone Spacing = 1MHz
OIP
3
Output Third Order Intercept Point
dB
dBm
dBm
Broomfield, CO 80021
2
EDS-104972 Rev A
Preliminary Information
303 S. Technology Ct.
Phone: (800) SMI-MMIC http://www.sirenza.com
SGC-2386Z 0.05-4.0 GHz Cascadeable MMIC Amplifier
Typical Performance with Bias Tee, V
D
= 3V, I
D
= 26mA (Typ.)
Caution: ESD sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
Parameter
Rating
ESD Rating - Human Body Model (HBM)
Class 1C
Moisture Sensitivity Level
MSL 1
Reliability & Qualification Information
This product qualification report can be downloaded at
www.sirenza.com
Parameter
Absolute Limit
Max Device Current (I
CE
)
55 mA
Max Device Voltage (V
CE
)
4.5 V
Max. RF Input Power* (See Note)
+18 dBm
Max. Junction Temp. (T
J
)
+150C
Operating Temp. Range (T
L
)
-40C to +85C
Max. Storage Temp.
+150C
Absolute Maximum Ratings
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating values
specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I
D
V
D
< (T
J
- T
L
) / R
TH
, j-l T
L
=T
LEAD
*Note: Load condition, Z
L
= 50 Ohms
100
500
850
1950
2400
3500
G
Small Signal Gain
dB
18.4
18.0
16.9
12.7
11.4
9.0
OIP
3
Output Third Order Intercept Point
dBm
23.4
23.2
24.3
24.7
22.8
P
1dB
Output Power at 1dB Compression
dBm
11.0
10.5
10.2
9.9
8.6
IRL
Input Return Loss
dB
24.2
18.9
20.0
21.8
18.1
15.8
ORL
Output Return Loss
dB
23.2
18.4
19.0
17.6
15.4
14.6
S
12
Reverse Isolation
dB
20.5
21.7
22.2
20.0
19.3
18.2
NF
Noise Figure
dB
2.9
3.0
3.3
3.7
3.9
4.7
Typical RF Performance at Key Operating Frequencies (Bias Tee)
Symbol
Parameter
Unit
Test Conditions: V
D
= 3V I
D
= 26mA Typ. OIP
3
Tone Spacing = 1MHz, Pout per tone = -5 dBm
T
L
= 25C Z
S
= Z
L
= 50 Ohms
Frequency (MHz)
OIP3 vs. Frequency (25C)
18
20
22
24
26
28
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
OI
P
3
(
d
Bm
)
P1dB vs. Frequency (25C)
5
7
9
11
13
15
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
P1
d
B
(
d
B
m
)
Broomfield, CO 80021
3
EDS-104972 Rev A
Preliminary Information
303 S. Technology Ct.
Phone: (800) SMI-MMIC http://www.sirenza.com
SGC-2386Z 0.05-4.0 GHz Cascadeable MMIC Amplifier
Typical Performance with Bias Tee, V
D
= 3V, I
D
= 26mA (Typ.)
|S11| vs. Frequency
-30
-25
-20
-15
-10
-5
0
0
1
2
3
4
Frequency (GHz)
S
11 (
d
B
)
S11_25C
|S12| vs. Frequency
-50
-40
-30
-20
-10
0
0
1
2
3
4
Frequency (GHz)
S1
2
(d
B
)
S12_25C
|S22| vs. Frequency
-30
-25
-20
-15
-10
-5
0
0
1
2
3
4
Frequency (GHz)
S2
2
(d
B
)
S22_25C
DCIV vs. Temperature
0
5
10
15
20
25
30
35
40
0
0.5
1
1.5
2
2.5
3
3.5
4
Vd (V)
Id
(m
A
)
+25C
-40C
+85C
|S21| vs. Frequency
0
4
8
12
16
20
0
1
2
3
4
Frequency (GHz)
G
a
in (
d
B
)
S21_25C
Noise Figure vs. Frequency (25C)
0
1
2
3
4
5
0
500
1000
1500
2000
2500
3000
3500
Frequency (GHz)
NF
(d
B
)
Broomfield, CO 80021
4
EDS-104972 Rev A
Preliminary Information
303 S. Technology Ct.
Phone: (800) SMI-MMIC http://www.sirenza.com
SGC-2386Z 0.05-4.0 GHz Cascadeable MMIC Amplifier
Application Circuit Schematic
Part Identification Marking & Pinout
Basic Application Circuit
Application Circuit Element Values
Reference
Designator
100-2000MHz
2000-4000MHz
C1
1000pF
2.7pF
C2
100pF
6.8pF
C3
100pF
6.8pF
L1
150nH
39nH
Application Circuit Schematic
Mounting Instructions
1. Use a large ground pad area under device pins 2
and 4 with many plated through-holes as shown.
2. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
C2
C1
L1
1uF
1000pF
C3
1
2
3
4
RF IN
4
1
C1
SGC-2386Z
2
3
1uF
Vs
1000pF
RF OUT
C2
C3
L1
Part
Number
Package /
Lead Composition
Reel Size
Devices /
Reel
SGC-2386Z
Lead Free, RoHs Compliant
13"
3000
Pin #
Function
Description
1
RF IN
RF input pin. This pin requires the use of an external DC
blocking capacitor chosen for the frequency of operation
2,4
GND
Connection to ground. Use via holes as close to the device
ground leads as possible to reduce ground inductance and
achieve optimum RF performance
3
RF OUT /
DC BIAS
RF output and bias pin. This pin requires the use of an
external DC blocking capacitor chosen for the frequency of
operation.
Broomfield, CO 80021
5
EDS-104972 Rev A
Preliminary Information
303 S. Technology Ct.
Phone: (800) SMI-MMIC http://www.sirenza.com
SGC-2386Z 0.05-4.0 GHz Cascadeable MMIC Amplifier
RF
OUT
RF
I N
86 PCB Pad Layout
Dimensions in inches [millimeters]
Dimensions given for 50 Ohm RF I/O lines are for 31
mil thick Getek. Scale accordingly for different
board thicknesses and dielectric contants.
86 Nominal Package Dimensions
Dimensions in inches [millimeters]
A link to the 86 package outline drawing with full dimensions and toler-
ances may be found on the product web page at www.sirenza.com.
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