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Электронный компонент: SXA-389BZ

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Product Description
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights
reserved.
303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com
EDS-102915 Rev D
1
0
5
10
15
20
25
30
35
40
45
50
850 MHz
1960 MHz
2140 MHz
2450 MHz
OIP3
P1dB
Gain
SXA-389B
SXA-389BZ
400-2500 MHz W Medium Power
GaAs HBT Amplifier with Active Bias
Product Features
Now Available in Leed Free, RoHS Compliant, &
Green Packaging
Lower Rth for increased MTTF
10
8
hrs. at T
Lead
= 85
C
On-chip Active Bias Control, Single 5V Supply
Excellent Linearity:
+43 dBm typ. OIP
3
at 1960 MHz
High P1dB : +25 dBm typ.
High Gain: +18.5 dB at 850 MHz
Efficient: consumes only 575 mW
Applications
W-CDMA, PCS, Cellular Systems
Multi-Carrier Applications
Sirenza Microdevices' SXA-389B amplifier is a high efficiency GaAs
Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-
mountable plastic package. These HBT MMICs are fabricated using molecular
beam epitaxial growth technology which produces reliable and consistent
performance from wafer to wafer and lot to lot.
These amplifiers are specially designed for use as driver devices for
infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, W-
CDMA applications.
Its high linearity makes it an ideal choice for multi-carrier as well as digital
applications.
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Typical OIP
3
, P1dB, Gain
dBm
Pb
RoHS Compliant
&
Package
Green
Phone: (800) SMI-MMIC
http://www.sirenza.com
303 S. Technology Court, Broomfield, CO 80021
EDS-102915 Rev D
SXA-389B
W GaAs HBT Amplifier
2
35
37
39
41
43
45
0
2
4
6
8
10
12
14
16
18
25C
85C
-40C
-75
-70
-65
-60
-55
-50
-45
-40
10
12
14
16
18
20
25C
85C
-40C
-40
-35
-30
-25
-20
-15
-10
-5
0
0.8
0.85
0.9
0.95
S 11
S 12
S 22
35
37
39
41
43
45
0.8
0.85
0.9
0.95
25C
85C
-40C
20
22
24
26
28
30
0.8
0.85
0.9
0.95
25C
85C
-40C
10
12
14
16
18
20
0.8
0.85
0.9
0.95
25C
85C
-40C
P1dB vs. Frequency
GHz
dBm
850 MHz Application Circuit Data, V
CC
= 5V, I
D
= 115mA
Note: Tuned for Output IP3
GHz
dB
GHz
Gain vs. Frequency
dB
Third Order Intercept vs. Frequency
(P
OUT
per tone = 11dBm)
GHz
dBm
Third Order Intercept vs. Tone Power
Frequency = 850 MHz
P
OUT
per tone (dBm)
dBm
880 MHz Adjacent Channel Power vs.
Channel Output Power
Adjacent Channel Power (dBc)
Channel Output Power (dBm)
IS-95, 9 Channels Forward
Input/Output Return Loss,
Isolation vs. Frequency, T=25
C
Phone: (800) SMI-MMIC
http://www.sirenza.com
303 S. Technology Court, Broomfield, CO 80021
EDS-102915 Rev D
SXA-389B
W GaAs HBT Amplifier
3
20
22
24
26
28
30
1.93
1.94
1.95
1.96
1.97
1.98
1.99
25C
85C
-40C
10
12
14
16
18
20
1.93
1.94
1.95
1.96
1.97
1.98
1.99
25C
85C
-40C
-30
-25
-20
-15
-10
-5
0
1.93
1.94
1.95
1.96
1.97
1.98
1.99
S 11
S 12
S 22
35
37
39
41
43
45
1.93
1.94
1.95
1.96
1.97
1.98
1.99
25C
85C
-40C
35
37
39
41
43
45
47
0
2
4
6
8
10
12
14
16
18
25C
85C
-40C
-75
-70
-65
-60
-55
-50
-45
-40
10
12
14
16
18
20
25C
85C
-40C
1960 MHz Application Circuit Data, V
CC
= 5V, I
D
= 115mA
Note: Tuned for Output IP3
P1dB vs. Frequency
GHz
dBm
GHz
Gain vs. Frequency
dB
dB
Input/Output Return Loss,
Isolation vs. Frequency, T=25
C
GHz
Third Order Intercept vs. Frequency
(P
OUT
per tone = 11dBm)
GHz
dBm
Third Order Intercept vs. Tone Power
Frequency = 1.96 GHz
P
OUT
per tone (dBm)
dBm
1960 MHz Adjacent Channel Power vs.
Channel Output Power
Adjacent Channel Power (dBc)
Channel Output Power (dBm)
IS-95, 9 Channels Forward
Phone: (800) SMI-MMIC
http://www.sirenza.com
303 S. Technology Court, Broomfield, CO 80021
EDS-102915 Rev D
SXA-389B
W GaAs HBT Amplifier
4
20
22
24
26
28
30
2.11
2.12
2.13
2.14
2.15
2.16
2.17
25C
85C
-40C
10
12
14
16
18
20
2.11
2.12
2.13
2.14
2.15
2.16
2.17
25C
85C
-40C
-30
-25
-20
-15
-10
-5
0
2.11
2.12
2.13
2.14
2.15
2.16
2.17
S 11
S 12
S 22
35
37
39
41
43
45
2.11
2.12
2.13
2.14
2.15
2.16
2.17
25C
85C
-40C
35
37
39
41
43
45
0
2
4
6
8
10
12
14
16
18
25C
85C
-40C
-65
-60
-55
-50
-45
-40
10
12
14
16
18
25C
85C
-40C
2140 MHz Application Circuit Data, V
CC
= 5V, I
D
= 115mA
Note: Tuned for Output IP3
P1dB vs. Frequency
GHz
dBm
GHz
Gain vs. Frequency
dB
dB
Input/Output Return Loss,
Isolation vs. Frequency, T=25
C
GHz
Third Order Intercept vs. Frequency
(P
OUT
per tone = 11dBm)
GHz
dBm
Third Order Intercept vs. Tone Power
Frequency = 2.14 GHz
P
OUT
per tone (dBm)
dBm
2140 MHz Adjacent Channel Power vs.
Channel Output Power
Adjacent Channel Power (dBc)
Channel Output Power (dBm)
W-CDMA, 64 DPCH + Overhead
Phone: (800) SMI-MMIC
http://www.sirenza.com
303 S. Technology Court, Broomfield, CO 80021
EDS-102915 Rev D
SXA-389B
W GaAs HBT Amplifier
5
20
22
24
26
28
30
2.4
2.42
2.44
2.46
2.48
2.5
25C
85C
-40C
10
12
14
16
18
20
2.4
2.42
2.44
2.46
2.48
2.5
25C
85C
-40C
-35
-30
-25
-20
-15
-10
-5
0
2.4
2.42
2.44
2.46
2.48
2.5
S 11
S 12
S 22
35
37
39
41
43
45
2.4
2.42
2.44
2.46
2.48
2.5
25C
85C
-40C
35
37
39
41
43
45
0
2
4
6
8
10
12
14
16
18
25C
85C
-40C
2450 MHz Application Circuit Data, V
CC
= 5V, I
D
= 115mA
Note: Tuned for Output IP3
P1dB vs. Frequency
GHz
dBm
GHz
Gain vs. Frequency
dB
dB
Input/Output Return Loss,
Isolation vs. Frequency, T=25
C
GHz
Third Order Intercept vs. Frequency
(P
OUT
per tone = 11dBm)
GHz
dBm
Third Order Intercept vs. Tone Power
Frequency = 2.45 GHz
P
OUT
per tone (dBm)
dBm