Skyworks Solutions, Inc. [978] 241-7000
Fax [978] 241-7906
Email sales@skyworksinc.com
www.skyworksinc.com
1
Specifications subject to change without notice. 8/01A
GaAs IC 900 MHz
High Dynamic Range Amplifier
Features
+18 dBm Output Power
+32 dBm Output IP3
1.8 dB Noise Figure
Single +5 V Supply
Input and Output Matched to 50
Ideal for Cellular Applications
SOIC-8 with Slug
AL106-84
Description
The AL106-84 is a high dynamic range amplifier for 900
MHz applications. The amplifier has 19 dBm output power,
high input intercept point (IIP3) of 18 dBm, low noise figure
of 1.8 dB and operates from a single positive bias of +5
V. External resistor sets the amplifier drain current. No
external matching elements are required. As a low noise
driver amplifier it is ideally suited for 900 MHz wireless
base station applications. The AL106-84 is encapsulated
in SOIC-8 package with slug for improved heat dissipation
and reliability.
Parameter
1
Condition
Frequency
Min.
Typ.
Max.
Unit
Small Signal Gain
800-960 MHz
13
14
dB
Input P
-1dB
900 MHz
5.5
7
dB
Input IIP3
P
IN
= -5 dBm
900 MHz
17.5
18.5
dBm
Noise Figure
800-960 MHz
1.8
2.4
dB
Reverse Isolation
800-960 MHz
22
dB
Input VSWR
800-960 MHz
1.5:1
Output VSWR
800-900 MHz
1.5:1
Electrical Specifications at 25C
0.049 (1.24 mm)
0.016 (0.41 mm)
0.068
(1.73 mm)
MAX.
0.016 MAX.
(0.41 mm) x
45 CHAMFER
PIN 1
0.106 (2.65 mm)
0.005 (0.12 mm)
0.066 (1.65 mm)
0.005 (0.12 mm)
EXPOSED
HEAT SLUG
0.010 (0.25 mm)
0.007 (0.17 mm)
0.158 (4.00 mm)
0.150 (3.80 mm)
8
MAX.
0.020 (0.51 mm) MAX.
0.244 (6.20 mm)
0.228 (5.80 mm)
0.050 (1.27 mm) BSC
PIN 8
PIN 1
INDICATOR
1. Test condition V
D
= +5 V, I
D
= 80 mA.
GaAs IC 900 MHz High Dynamic Range Amplifier
AL106-84
2
Skyworks Solutions, Inc. [978] 241-7000
Fax [978] 241-7906
Email sales@skyworksinc.com
www.skyworksinc.com
Specifications subject to change without notice. 8/01A
Gain vs. Frequency Over Temperature
Frequency (GHz)
Gain (dB)
8
9
10
11
12
13
14
15
0.6
0.7
0.8
0.9
1.0
1.1
1.2
25C
0C
70C
Noise Figure vs. Frequency
Frequency (GHz)
Noise Figure (dB)
1.0
1.5
2.0
2.5
3.0
0.6
0.7
0.8
0.9
1.0
1.1
1.2
P
OUT
and Gain vs. P
IN
900 MHz
P
IN
(dBm)
Gain (dB) and P
OUT
(dBm)
10
12
14
16
18
20
22
-2
-1
0
1
2
3
4
5
6
7
8
P
OUT
Gain
Input and Output VSWR vs. Frequency
Frequency (GHz)
VSWR
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.6
0.7
0.8
0.9
1.0
1.1
1.2
Input
Output
Typical Performance Data at 25C
GaAs IC 900 MHz High Dynamic Range Amplifier
AL106-84
Skyworks Solutions, Inc. [978] 241-7000
Fax [978] 241-7906
Email sales@skyworksinc.com
www.skyworksinc.com
3
Specifications subject to change without notice. 8/01A
12
3
4
87
6
5
C
BL
RF Out
GND
GND
GND
GND
RF In
V
D
R
Pin Out
Terminal
Symbol
Function
1
RF In
RF input
2
GND
Ground
3
GND
Ground
4
GND
Ground
5
R
Current Set External Resistor
6
GND
Ground
7
RF Out
RF Output
8
V
D
+5 V Supply Through
Bypass Cap
Pin Configuration
Characteristic
Value
Drain Voltage (V
D
)
7 V
Current (I
D
)
150 mA
Input Power (P
IN
)
20 dBm
Operating Temperature (T
OP
)
-30 to +100C
Storage Temperature (T
ST
)
-65 to +120C
Absolute Maximum Ratings
Power Supply and Current Settings
V
D
of +5 V is fed to pin 8. A 200 pF bypass capacitor
should be placed as close as possible to the lead. The
current can be set 60110 mA by changing the resistor
connected to pin 5 at a distance of up to 5 mm away from
the lead on FR4 substrate. Typical values for the resistor
(R) are 818
.
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