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Электронный компонент: AP112-79

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Skyworks Solutions, Inc. [978] 241-7000
Fax [978] 241-7906
Email sales@skyworksinc.com
www.skyworksinc.com
1
Specifications subject to change without notice. 3/99A
GaAs IC GSM Power Amplifier
Features
+3.5 V Operation
Output Power up to 35 dBm
Efficiency Typically 55%
Outstanding Efficiency vs. Supply Voltage
High Power SSOP-16 Package with Slug
Wide Power Control Range (50 dB)
SSOP-16 Slug
AP112-79
Description
The AP112-79 is a low cost IC power amplifier designed
for the 880915 MHz frequency band. It features 3 cell
battery operation and high efficiency. The AP112-79 has
external matching for improved performance and flexibility.
0.1968 (5.00 mm)
0.1890 (4.80 mm)
0.025 (0.635 mm) TYP.
PIN 16
PIN 1
INDICATOR
PIN 1
0.158 (4.00 mm)
0.150 (3.80 mm)
EXPOSED
HEAT SINK
R .0080
(0.020 mm) (4X)
0.244
(6.20 mm)
0.228
(5.80 mm)
0.111 (2.82 mm)
0.101 (2.57 mm)
0.071
(1.80 mm)
0.061
(1.55 mm)
0.0196 X 45
CHAMFER
8 MAX.
0.0628 (1.60 mm)
0.0492 (1.25 mm)
0.0098
(0.25 mm)
0.0075
(0.19 mm)
Output Matching Circuit
The output match for the AP112-79 is provided externally
in order to improve performance, reduce cost, and add
flexibility. By making use of ceramic surface mount
components with better Qs than GaAs matching
elements, a lower loss matching network can be made.
This lower loss results in higher power and efficiency for
the amplifier. Also, by keeping these elements external the
GaAs die size is reduced and the overall cost is less. This
approach also permits the flexibility to tweak the amplifier
for optimum performance at different powers, and/or
frequencies.
Quantity
Value
Amplifier Supply Voltage (V
DS
)
10 V
Input RF Power (P
IN
)
15 dBm
Duty Cycle
50%
Operating Temperature (T
OP
)
-40 to +85C
Storage Temperature (T
ST
)
-65 to +150C
Absolute Maximum Ratings
GaAs IC GSM Power Amplifier
AP112-79
2
Skyworks Solutions, Inc. [978] 241-7000
Fax [978] 241-7906
Email sales@skyworksinc.com
www.skyworksinc.com
Specifications subject to change without notice. 3/99A
40
35
30
25
20
15
10
5
-10 -8
-4
0
4
8
12
-6
-2
2
6
10
14
40
50
60
70
30
20
10
0
P
IN
(dBm)
P
OUT
(dBm) & Gain (dB)
PAE (%)
GSM 3.5 V Power Performance
V
G
= -1.7 V, V
DD
= 3.5 V,
Frequency = 902 MHz
Gain
PAE
P
OUT
20
30
40
10
0
-10
-20
-30
-40
-50
10
20
30
40
50
60
0
-10
-20
-30
V
GG
(V)
P
OUT
(dBm) & Gain (dB)
PAE (%)
GSM 3.5 V Gate Sweep
P
IN
= 12 dBm, V
DD
= 3.5 V,
Frequency = 902 MHz
Gain
PAE
P
OUT
-3.5
-3
-2.5
-2
-1.5
-1
Typical Performance Data
Quantity
Symbol
Condition
Min.
Typ.
Max.
Unit
Output Power
P
OUT
T
OP
= +25C
34.5
35
dBm
V
DS
= 2.8 V,
32.5
33
T
OP
= (-40 to +85C)
Power Added Efficiency
n
PAE
50
55
%
Control Voltage Range
V
GG
-3
-1
V
2nd Harmonic
H
2
-43
-40
dBc
3rd Harmonic
H
3
-48
-45
dBc
Input VSWR
VSWR
IN
P
OUT
(535 dBm), Controlled by V
GG
3:1
2:1
Forward Isolation
P
OUT, STANDBY
P
IN
= 12 dBm, V
GG
= -3.0 V
-39
-30
dBm
Switching Time
t
R
, t
F
Time from P
OUT
= -10 dBm
1
2
S
to P
OUT
= 34.5 dBm
Burn Out
BO
V
DS
= 2.8 V to 6.0 V,
No Module Damage
P
IN
= 8 dBm to 14 dBm,
or Permanent Degradation
Z
S
= 50
, Load
VSWR = 10:1, All Phase Angles
Stability
Stab.
All Combinations of the Following
No Parasitic Oscillations
Parameters: I
DS
= 0A to xA,
Above -36 dBm
x = Current at P
OUT
= 34.5 dBm in 50
P
IN
= 10 dBm to 14 dBm,
V
DS
= 2.5 V to 4.5 V,
T
OP
= -40 to +85C,
Load VSWR = 10:1, All Phase Angles
Slope
P
OUT
/V
GG
P
OUT
= -15 dBm to 35 dBm
10
100
150
dB/V
Noise Power
100 KHz BW
-90
-85
dBm
925960 MHz Band
Phase Change
AM-PM
The Change in Phase When
5
10
Deg.
P
OUT
Changes from 33 dBm to 34 dBm
Electrical Specifications at 25C
Characteristic Values:
P
IN
= 12 dBm
fc = 880915 MHz
V
DS
= 3.5 V
T
OP
= +25C
V
GG
= Switched at 217 Hz with Duty Cycle of 12.5%
GaAs IC GSM Power Amplifier
AP112-79
Skyworks Solutions, Inc. [978] 241-7000
Fax [978] 241-7906
Email sales@skyworksinc.com
www.skyworksinc.com
3
Specifications subject to change without notice. 3/99A
12
3
4
5
6
8
16
15
14
13
12
11
9
7
10
GND
GND
RF Out/V
DS2
V
GS2
RF Out
N/C
RF Out
V
DS1
RF Out
N/C
N/C
GND
GND
RF In
GND
V
GS1
Pin Out
Pin Configuration
Terminal
Symbol
Function
1
GND
Ground
2
V
GS2
Gate Voltage 2
3
N/C
Not Connected
4
V
DS1
Drain Voltage 1
5
N/C
Not Connected
6
GND
Ground
7
RF In
RF Input
8
V
GS1
Gate Voltage 1
9
GND
Ground
10
GND
Ground
11
N/C
Not Connected
12
RF Out
RF Output
13
RF Out
RF Output
14
RF Out
RF Output
15
RF Out/V
DS2
RF Output/Drain Voltage 2
16
GND
Ground