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Электронный компонент: AT002N3-12

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Skyworks Solutions, Inc. [978] 241-7000
Fax [978] 241-7906
Email sales@skyworksinc.com
www.skyworksinc.com
1
Specifications subject to change without notice. 3/99A
Parameter
Condition
Frequency
Min.
Typ.
Max.
Unit
Switching Characteristics
4
Rise, Fall (10/90% or 90/10% RF)
7
ns
On, Off (50% CTL to 90/10% RF)
10
ns
Video Feedthru
20
mV
Input Power for 1 dB Compression
For All Attenuation Levels
0.53 GHz
0
dBm
0.05 GHz
-3
dBm
Control Voltages
V
Low
= 0 to -0.2 V @ 20 A Max.
V
High
= -5 V @ 50 A Max.
GaAs IC 30 dB Voltage Variable Attenuator
Dual Bias DC2.5 GHz
Features
Dual Voltage Control
Low Insertion Loss < (1.2 dB)
Bridged "T" Design, Non-Reflective
Low Cost SOIC-8 Plastic Package
SOIC-8
AT002N3-12
Description
The AT002N3-12 DC2 GHz GaAs FET IC non-reflective
bridged "T" attenuator provides up to 30 dB of "non-
reflective" attenuation. The control voltage requirements
are 0 to -5 V.
This attenuator has two independent voltage controls,
which must be adjusted in a prescribed manner to obtain
the desired attenuation under non-reflective conditions.
Refer to the Application Notes section, "Dual Voltage
Controlled VVA."
Applications for these fast attenuators are AGC circuits
and variable level control in various military and
telecommunications systems.
Parameter
1
Frequency
2
Min.
Typ.
Max.
Unit
Insertion Loss
3
DC1.0 GHz
0.9
1.0
dB
DC2.0 GHz
1.1
1.2
dB
DC2.5 GHz
1.2
1.3
dB
Attenuation
DC1.0 GHz
30
31
dB
DC2.0 GHz
27
29
dB
DC2.5 GHz
23
27
dB
VSWR (I/O)
DC2.5 GHz
1.6:1
1.8:1
Electrical Specifications at 25C (0, -5 V)
Operating Characteristics at 25C (0, -5 V)
1. All measurements made in a 50
system, unless otherwise specified.
2. DC = 300 kHz.
3. Insertion loss changes by 0.003 dB/C.
4. Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth.
0.049
(1.24 mm)
0.016
(0.41 mm)
0.016 MAX.
(0.41 mm) x
45 CHAMFER
PIN 1
0.197 (5.00 mm)
0.189 (4.80 mm)
0.068
(1.73 mm) MAX.
0.010 (0.25 mm)
0.004 (0.10 mm)
0.010 (0.25 mm)
0.007 (0.17 mm)
0.158 (4.00 mm)
0.150 (3.80 mm)
8
MAX.
0.020 (0.51 mm) MAX.
0.244 (6.20 mm)
0.228 (5.80 mm)
0.050 (1.27 mm) BSC
PIN 8
PIN 1
INDICATOR
GaAs IC 30 dB Voltage Variable Attenuator Dual Bias DC2.5 GHz
AT002N3-12
2
Skyworks Solutions, Inc. [978] 241-7000
Fax [978] 241-7906
Email sales@skyworksinc.com
www.skyworksinc.com
Specifications subject to change without notice. 3/99A
2.4
2.0
1.6
1.2
0.8
0.4
3
2
1
Frequency (GHz)
Insertion Loss vs. Frequency
dB
+85C
-40C
0
-1
-2
-3
-4
-5
0
5
10
15
20
25
30
Relative Attenuation (dB)
Relative Attenuation vs. Control Voltage
V
1
, V
2
(V)
V
P
* = 3.5 V
V
2
(Shunt)
V
1
(Series)
F = 1 GHz
40
30
20
10
5
0
3
2
1
Frequency (GHz)
Attenuation (By State) vs. Frequency
dB
30 dB 3.0
20 dB 1.0
10 dB 0.8
5 dB 0.5
15
20
25
30
10
5
0
+15
+10
+5
0
-5
Attenuation (dB)
Attenuation vs. 1.0 dB Compression Point
P
IN
at 1.0 dB Compression
(dBm)
+20
F = 50 MHz
Typical Performance Data (0, -5 V)
J
2
J
1
V
1
V
2
GND
GND
GND
GND
12
3
4
87
6
5
Characteristic
Value
RF Input Power
10 mW > 500 MHz 0/-8 V
4 mW 50 MHz 0/-8 V
Control Voltage
+0.2 V, -8 V
Operating Temperature
-40C to +85C
Storage Temperature
-65C to +150C
JC
25C/W
Absolute Maximum Ratings
Note: Operating this device above any of these parameters may cause
irreversible damage.
Pin Out
Attenuation
V
1
V
2
J
1
J
2
0
-5
Insertion Loss
-5
0
Full Attenuation
Truth Table
*"Pinch-off" voltage (V
P
) varies from unit to unit in the approximate range of
-3.2 to -3.8 V. Bias voltages V
1
and V
2
would shift up or down.