--1--
E97108A82-TE
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any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Absolute Maximum Ratings (Ta=25 C)
Reverse voltage
V
R
34
V
Operating temperature
Topr
20 to +75
C
Storage temperature
Tstg
65 to +150
C
Description
The 1T378A is a variable capacitance diode
designed for electronic tuning of wide-band CATV
tuners, and the super miniature package allows the
tuner miniaturization.
High capacitance ratio (C
25
/C
28
) is improved to
support guard band.
Features
Super miniature package
Low series resistance
0.85
Max. (f=470 MHz)
Large capacitance ratio 12.5
Typ. (C
2
/C
25
)
1.03
Min. (C
25
/C
28
)
Small leakage current
10 nA Max. (V
R
=28 V)
Capacitance deviation
within 2 %
Applications
Electronic tuning of VHF band and wide-band
CATV tuners
Structure
Silicon epitaxial planar type diode
Variable Capacitance Diode
M-235
1T378A
Electrical Characteristics
(Ta=25 C)
Item
Reverse current
Reverse voltage
Diode capacitance
Capacitance ratio
Series resistance
Capacitance deviation in a
matching group
Symbol
I
R
V
R
C
2
C
25
C
2
/C
25
C
25
/C
28
rs
C
Conditions
V
R
=28 V
I
R
=1 A
V
R
=2 V, f=1 MHz
V
R
=25 V, f=1 MHz
C
D
=14 pF, f=470 MHz
V
R
=2 to 25 V, f=1 MHz
Min.
Typ.
Max.
Unit
10
nA
34
V
33.0
39.0
pF
2.57
3.00
pF
12.0
12.5
1.03
0.85
2
%
The continuous 20 pieces of
C are guaranteed.
--2--
1T378A
1
2
5
10
20
50
1
2
5
10
20
50
100
Diode capacitance vs. Reverse voltage
V
R
-Reverse voltage (V)
C
-
D
i
o
d
e
c
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Reverse current vs. Ambient temperature
20
0
20
40
60
80
Ta-Ambient temperature (C)
I
R
-
R
e
v
e
r
s
e
c
u
r
r
e
n
t
(
p
A
)
1
100
1000
100
10
Reverse current vs. Reverse voltage
I
R
-
R
e
v
e
r
s
e
c
u
r
r
e
n
t
(
p
A
)
1.00
1000.00
100.00
10.00
1
10
100
V
R
-Reverse voltage (V)
0.10
Ta=25C, f=1MHz
V
R
=28V
Ta=25C
Ta=60C
Ta=80C
--3--
1T378A
1000
Thermal coefficient of diode capacitance
1
10
V
R
-Reverse voltage (V)
T
h
e
r
m
a
l
c
o
e
f
f
i
c
i
e
n
t
(
p
p
m
/
C
)
10
100
100
0.99
1.00
1.01
1.02
1.03
1.04
Diode capacitance vs. Ambient temperature
C
(
T
a
)
/
C
(
2
5
C
)
-
D
i
o
d
e
c
a
p
a
c
i
t
a
n
c
e
V
R
=1V
V
R
=2V
V
R
=25V
V
R
=15V
V
R
=7V
Forward voltage vs. Ambient temperature
V
F
-
F
o
r
w
a
r
d
v
o
l
t
a
g
e
(
V
)
20
0
20
40
60
80
Ta-Ambient temperature (C)
0.80
0.70
0.60
0.50
Reverse voltage vs. Ambient temperature
V
R
-
R
e
v
e
r
s
e
v
o
l
t
a
g
e
(
V
)
20
0
20
40
60
80
Ta-Ambient temperature (C)
45
40
35
30
I
F
=1mA
I
R
=10A
20
0
20
40
60
80
Ta-Ambient temperature (C)
0.97
0.98
f=1MHz
f=1MHz
SONY CODE
EIAJ CODE
JEDEC CODE
PACKAGE WEIGHT
M-235
1.25
+ 0.2
0.1
0.3
+ 0.1
0.05
1
.
7
0
.
1
2
.
5
0
.
2
1
2
0.3
+ 0.1
0.05
0.9 0.1
0.2
0 0.05
0 to 10
0.11
+ 0.1
0.06
M-235
0.1g
NOTE: Dimension "
" does not include mold protrusion.
Package Outline Unit : mm
1T378A
--4--
Marking
1
2
CATHODE MARK
78
B
Notes
1) B:Lot No.(Year and Month of manufacture)
Year;Last one digit
Month;A,B,C(for Oct. to Dec.)
1 to 9(for Jan.to Sept.)
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