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Электронный компонент: 1T387

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Variable Capacitance Diode
Description
The 1T387 is a variable capacitance diode
designed for electronic tuning of BS and CS tuners
using a super miniature package (SMVC).
Features
Super miniature package
Low series resistance:
1.5
Max.
(f = 470MHz)
Large capacitance ratio: 14.6 Typ.
(C
1
/C
25
)
Small leakage current:
10nA Max.
(V
R
= 25V)
Capacitance deviation in a matching group: within 6%
Applications
Electronic tuning of BS and CS tuners
Structure
Silicon epitaxial planar type diode
Absolute Maximum Ratings (Ta = 25C)
Reverse voltage
V
R
30
V
Peak reverse voltage
V
RM
35
V
(R
L
10k
)
Operating temperature
Topr
20 to +75
C
Storage temperature
Tstg
65 to +150
C
1
E00421-PS
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
1T387
M-235
Electrical Characteristics
(Ta = 25C)
Reverse voltage
Reverse current
Diode capacitance
Capacitance ratio
Series resistance
Capacitance deviation in a matching group
V
R
I
R
C
1
C
25
C
1
/C
25
rs
C
I
R
= 1A
V
R
= 25V
V
R
= 1V, f = 1MHz
V
R
= 25V, f = 1MHz
V
R
= 5V, f = 470MHz
V
R
= 1 to 25V, f = 1MHz
30.0
7.84
0.54
12.2
14.6
1.30
10.0
9.44
0.64
1.50
6.0
V
nA
pF
pF
%
Unit
Max.
Typ.
Min.
Conditions
Symbol
Item
2
1T387
I
F
= 1mA
1
10
0.1
1
10
Diode capacitance vs. Reverse voltage
V
R
Reverse voltage [V]
C


D
i
o
d
e

c
a
p
a
c
i
t
a
n
c
e

[
p
F
]
Ta Ambient temperature [
C]
Forward voltage vs. Ambient temperature
V
F


F
o
r
w
a
r
d

v
o
l
t
a
g
e

[
V
]
20
0
20
40
60
10
100
1000
Reverse current vs. Ambient temperature
Ta Ambient temperature [
C]
I
R


R
e
v
e
r
s
e

c
u
r
r
e
n
t

[
p
A
]
80
0.90
0. 80
0.70
0.60
20
0
20
40
60
80
I
R
= 10
A
Ta Ambient temperature [
C]
Reverse voltage vs. Ambient temperature
V
R


R
e
v
e
r
s
e

v
o
l
t
a
g
e

[
V
]
45
40
35
30
20
0
20
40
60
80
V
R
= 25V
5
2
0.2
0.5
2
5
20
50
3
1T387
20
20
0
40
60
0.98
0.99
1.00
V
R
= 1V
V
R
= 2V
V
R
= 7V
V
R
= 25V
V
R
= 15V
1.01
1.02
1.03
Diode capacitance vs. Ambient temperature
Ta Ambient temperature [
C]
C

(
T
a
)
/
C

(
2
5
C
)


D
i
o
d
e

c
a
p
a
c
i
t
a
n
c
e
V
R
Reverse voltage [V]
Temperature coefficient of diode capacitance
T
e
m
p
e
r
a
t
u
r
e

c
o
e
f
f
i
c
i
e
n
t

[
p
p
m
/
C
]
80
1
3
10
30
0.1
1
10
100
Reverse current vs. Reverse voltage
V
R
Reverse voltage [V]
I
R


R
e
v
e
r
s
e

c
u
r
r
e
n
t

[
p
A
]
1000
500
200
100
50
30
1
2
5
10
20
50
Ta = 25
C
Ta = 60
C
Ta = 80
C
4
1T387
SONY CODE
EIAJ CODE
JEDEC CODE
PACKAGE WEIGHT
M-235
1.25
+ 0.2
0.1
0.3
+ 0.1
0.05
1
.
7


0
.
1
2
.
5


0
.
2
1
2
0.3
+ 0.1
0.05
0.9 0.1
0.2
0 0.05
0 to 10
0.11
+ 0.1
0.06
M-235
0.1g
NOTE: Dimension "
" does not include mold protrusion.
Package Outline
Unit: mm
Marking
2
87
B
1
CATHODE MARK
Note
B: Lot No. (Year and Month of manufacture)
Year; Last one digit
Month; A, B, C (for Oct. to Dec.)
1 to 9 (for Jan. to Sept.)
Sony Corporation