--1--
E97454A82-TE
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any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Absolute Maximum Ratings (Ta=25 C)
Reverse voltage
V
R
34
V
Operating temperature
Topr
20 to +75
C
Storage temperature
Tstg
65 to +150
C
Description
The 1T399 is a variable capacitance diode
designed for the electronic tuning of wide-band
CATV tuners, and it has a super miniature package.
Features
Super miniature package
Small series resistance 0.75
Max. (f=470 MHz)
Large capacitance ratio 11.7
Typ. (C
2
/C
25
)
18.0
Typ. (C
1
/C
28
)
Small leak current
10 nA Max. (V
R
=28 V)
Capacitance deviation in a matching group:
within 2 %
Applications
Electronic tuning of wide-band CATV tuners
Structure
Silicon epitaxial planar-type diode
Variable Capacitance Diode
M-235
1T399
Electrical Characteristics
(Ta=25 C)
Item
Reverse current
Diode capacitance
Capacitance ratio
Series resistance
Capacitance deviation in a
matching group
Symbol
I
R
C
2
C
25
C
2
/C
25
C
25
/C
28
rs
C
Conditions
V
R
=28 V
V
R
=2 V, f=1 MHz
V
R
=25 V, f=1 MHz
C
D
=14 pF, f=470 MHz
V
R
=2 to 25 V, f=1 MHz
Min.
Typ.
Max.
Unit
10
nA
29.50
35.50
pF
2.53
2.93
pF
11.0
11.7
1.03
0.75
2
%
--2--
1T399
Diode capacitance vs. Reverse voltage
1
2
5
10
20
50
V
R
Reverse voltage (V)
C
D
i
o
d
e
c
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Ta = 25C
Reverse current vs. Ambient temperature
100
1
10
20
Ta Ambient temperature [C]
I
R
R
e
v
e
r
s
e
c
u
r
r
e
n
t
(
p
A
)
0
20
40
60
Forward voltage vs. Ambient temperature
20
0
20
40
60
80
Ta Ambient temperature (C)
V
F
F
o
r
w
a
r
d
v
o
l
t
a
g
e
(
V
)
I
F
= 1mA
Reverse voltage vs. Ambient temperature
20
0
20
40
60
Ta Ambient temperature (C)
V
R
R
e
v
e
r
s
e
v
o
l
t
a
g
e
(
V
)
50
45
40
35
I
R
= 10A
V
R
= 28V
0.80
0.70
0.60
0.50
100
50
20
10
1
2
80
80
5
Example of Representative Characteristics
--3--
1T399
Diode capacitance vs. Ambient temperature
20
0
20
40
60
80
Ta Ambient temperature (C)
C
(
T
a
)
/
C
(
2
5
C
)
D
i
o
d
e
c
a
p
a
c
i
t
a
n
c
e
V
R
= 1V
Temperature coefficient of diode capacitance
1
2
5
10
20
V
R
Reverse voltage (V)
T
e
m
p
e
r
a
t
u
r
e
c
o
e
f
f
i
c
i
e
n
t
(
p
p
m
/
C
)
1000
500
200
50
Reverse current vs. Reverse voltage
1
V
R
Reverse voltage (V)
I
R
R
e
v
e
r
s
e
c
u
r
r
e
n
t
(
p
A
)
3
10
30
V
R
= 2V
V
R
= 7V
V
R
= 15V
V
R
= 25V
100
Ta = 25C
Ta = 80C
Ta = 60C
1.03
1.02
1.01
1.00
0.99
0.98
100
10
0.1
1
50
SONY CODE
EIAJ CODE
JEDEC CODE
PACKAGE WEIGHT
M-235
1.25
+ 0.2
0.1
0.3
+ 0.1
0.05
1
.
7
0
.
1
2
.
5
0
.
2
1
2
0.3
+ 0.1
0.05
0.9 0.1
0.2
0 0.05
0 to 10
0.11
+ 0.1
0.06
M-235
0.1g
NOTE: Dimension "
" does not include mold protrusion.
Package Outline Unit : mm
1T399
--4--
Marking
1
2
CATHODE MARK
99
B
Notes
1) B:Lot No.(Year and Month of manufacture)
Year;Last one digit
Month;A,B,C(for Oct. to Dec.)
1 to 9(for Jan.to Sept.)
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