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Электронный компонент: 1T405A

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E97109-TE
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any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Variable Capacitance Diode
M-290
1T405A
Absolute Maximum Ratings (Ta=25 C)
Reverse voltage
V
R
34
V
Operating temperature
Topr
20 to +75
C
Storage temperature
Tstg
65 to +150
C
Description
The 1T405A is a variable capacitance diode
designed for electronic tuning of wide-band CATV
tuners using a super-small-miniature flat package
(SSVC).
High capacitance ratio (C25/C28) is improved to
support guard band.
Features
Super-small-miniature flat package
Low series resistance
0.85
Max. (f=470 MHz)
Large capacitance ratio 12.5 Typ.
(C
2
/C
25
)
1.03 Min.
(C
25
/C
28
)
Small leakage current
10 nA Max. (V
R
=28 V)
Capacitance deviation
within 2 %
Applications
Electronic tuning of VHF band and wide-band
CATV tuners
Structure
Silicon epitaxial planar type diode
Electrical Characteristics
(Ta=25 C)
Unit
nA
V
pF
pF
%
Max.
10
38.96
2.96
0.85
2
Typ.
12.5
Min.
34
32.96
2.53
12.0
1.03
Item
Reverse current
Reverse voltage
Diode capacitance
Capacitance ratio
Series resistance
Capacitance
deviation in a
matching group
Symbol
I
R
V
R
C
2
C
25
C
2
/C
25
C
25
/C
28
rs
C
Conditions
V
R
=28 V
I
R
=1 A
V
R
=2 V, f=1 MHz
V
R
=25 V, f=1 MHz
C
D
=14 pF, f=470 MHz
V
R
=2 to 25 V, f=1 MHz
The continuous 20 pieces of
C are guaranteed.
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1T405A
1
2
5
10
20
50
1
2
5
10
20
50
100
Diode capacitance vs. Reverse voltage
V
R
-Reverse voltage (V)
C-Diode capacitance (pF)
Reverse current vs. Ambient temperature
20
0
20
40
60
80
Ta-Ambient temperature (C)
I
R
-Reverse current (pA)
1
100
1000
100
10
Reverse current vs. Reverse voltage
I
R
-Reverse current (pA)
10.00
10000.00
1000.00
100.00
1
10
100
V
R
-Reverse voltage (V)
1.00
Ta=25C, f=1MHz
V
R
=28V
Ta=60C
Ta=25C
Ta=80C
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1T405A
1000
Thermal coefficient of diode capacitance
1
10
V
R
-Reverse voltage (V)
Thermal coefficient (ppm/C)
10
100
100
0.99
1.00
1.01
1.02
1.03
1.04
Diode capacitance vs. Ambient temperature
C (Ta) / C (25C)-Diode capacitance
V
R
=1V
V
R
=2V
V
R
=25V
V
R
=15V
V
R
=7V
Forward voltage vs. Ambient temperature
V
F
-Forward voltage (V)
20
0
20
40
60
80
Ta-Ambient temperature (C)
0.80
0.70
0.60
0.50
Reverse voltage vs. Ambient temperature
V
R
-Reverse voltage (V)
20
0
20
40
60
80
Ta-Ambient temperature (C)
45
35
30
I
F
=1mA
I
R
=10A
20
0
20
40
60
80
Ta-Ambient temperature (C)
0.97
0.98
f=1MHz
f=1MHz
Package Outline Unit : mm
1T405A
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SONY CODE
EIAJ CODE
JEDEC CODE
PACKAGE MATERIAL
LEAD TREATMENT
LEAD MATERIAL
PACKAGE WEIGHT
EPOXY RESIN
SOLDER PLATING
COPPER
b
1.7
0.1
10 MAX
c
0.8 0.1
10 MAX
0.7
0.1
c
b
0.11 0.005
0.3 0.025
BASE METAL
0.11
0.01
0.3
0.02
WITH PLATING
+ 0.05
+ 0.05
M-290
0.2
0.05
0.002g
M-290
1.3
0.1
M
A
0.2
A
S5
1
2
1 : Cathode
2 : Anode
MARK