--1--
E95916-TE
Absolute Maximum Ratings (Ta=25 C)
Reverse voltage
V
R
30
V
Peak reverse voltage
V
RM
35
V
(RL
10 k
)
Operating temperature
Topr
20 to +75
C
Storage temperature
Tstg
65 to +150
C
Description
The 1T403 is a variable capacitance diode
designed for electronic tuning of VHF TV tuners and
CATV tuners using a super-small-miniature flat
package (SSVC).
Features
Super-small-miniature flat package
Low series resistance:
0.8
Max.
(f=470 MHz)
Large capacitance ratio: 15.0 Typ.
(C
1
/C
28
)
Small leakage current:
10 nA Max. (V
R
=28 V)
Capacitance deviation in a matching group:
within 2 %
Applications
Electronic tuning of TV and CATV tuners
Structure
Silicon epitaxial planar type diode
Variable Capacitance Diode
1T403
M-290
Electrical Characteristics
(Ta=25 C)
Item
Reverse current
Diode capacitance
Capacitance ratio
Series resistance
Capacitance
deviation in a
matching group
Symbol
I
R
C
1
C
28
C
1
/C
28
rs
C
Conditions
V
R
=28 V
V
R
=1 V, f=1 MHz
V
R
=28 V, f=1 MHz
C
D
=14 pF, f=470 MHz
V
R
=1 to 28 V, f=1 MHz
Min.
34.61
2.321
13.5
Typ.
15.0
0.75
Max.
10
42.31
2.714
0.80
2
Unit
nA
pF
pF
%
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
--2--
1T403
1
2
5
10
20
50
1
2
5
10
20
50
100
Diode capacitance vs. Reverse voltage
V
R
-Reverse voltage (V)
C-Diode capacitance (pF)
Ta=25C
1
10
100
Reverse current vs. Ambient temperature
20
0
20
40
60
80
Ta-Ambient temperature (C)
I
R
-Reverse current (pA)
V
R
=28V
0.60
0.80
Forward voltage vs. Ambient temperature
20
0
20
40
60
80
Ta-Ambient temperature (C)
V
F
-Forward voltage (V)
I
F
=1mA
0.70
0.50
35
45
Reverse voltage vs. Ambient temperature
20
0
20
40
60
V
R
-Reverse voltage (V)
I
R
=10A
40
30
80
Ta-Ambient temperature (C)
--3--
1T403
1.01
1.03
Diode capacitance vs. Ambient temperature
20
0
20
40
60
80
Ta-Ambient temperature (C)
C (Ta)/C (25C)-Diode capacitance
V
R
=1V
1.02
1.00
0.99
0.98
V
R
=2V
V
R
=7V
V
R
=28V
V
R
=15V
1
100
Reverse current vs. Reverse voltage
1
3
10
30
V
R
-Reverse voltage (V)
I
R
-Reverse current (pA)
10
0.1
Ta=80C
Ta=60C
Ta=25C
1000
Temperature coefficient of diode capacitance
1
2
5
10
V
R
-Reverse voltage (V)
Temperature coefficient (ppm/C)
50
20
50
500
200
100
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