--1--
E99144-TE
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any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Absolute Maximum Ratings (Ta=25 C)
Supply voltage
V
DD
7
V
Control voltage
Vctl
5
V
Input power
Pin
25
dBm
Operating temperature
Topr
35 to +85
C
Storage temperature
Tstg
65 to +150
C
Description
The CXG1040TN is a DPDT (Dual Pole Dual
Throw) antenna switch MMIC used in Personal
Communication handsets such as PCS.
This IC is designed using the Sony's GaAs J-FET
process and operates with CMOS input.
Features
CMOS input control
Insertion loss
0.5 dB (Typ.) at 2.0 GHz
High isolation
25 dB (Typ.) at 2.0 GHz
Small Package
TSSOP-10pin
Applications
DPDT switch for digital cellular telephones such as
PCS handsets.
Structure
GaAs J-FET MMIC
High Isolation DPDT Switch
10 pin TSSOP (Plastic)
CXG1040TN
GaAs MMICs are ESD sensitive devices. Special handling precautions are required.
--2--
CXG1040TN
Pin Configuration
Block Diagram
10pin TSSOP (PLASTIC)
CTLA
CTLB
RF4
RF1
V
DD
GND
GND
GND
RF3
RF2
5
1
6
10
Unit : mm
SW6
RF3
SW2
SW4
SW3
SW1
SW5
RF4
RF2
RF1
Recommended Circuit
CTLA
RF4
RF3
CTLB
RF1
RF2
CXG1040TN
C2 100pF
C2 100pF
C2 100pF
C2 100pF
1
2
3
4
5
6
7
8
9
10
Rctl 1k
Rctl 1k
Rrf 220k
Rrf 220k
C1 100pF
C1 100pF
C1 100pF
V
DD
When using the CXG1040TN, the following external components should be used:
C1:
This is used for signal line filtering 100 pF is recommended.
C2:
This is used for RF De-coupling and must be used in all applications. 100 pF is recommended.
Rctl: This is used to give improved ESD performance.
Rrf:
This resistor is used to stabilize the dc operating point at high power levels. A value of 220 k
is
recommended.
--4--
CXG1040TN
Electrical Characteristics (1)
V
DD
=3 V, Vctl (L)=0 V, Vctl (H)=2.8 V3 %,
@2 GHz, Pin=10 dBm, Impedance at all ports : 50
(Ta=25 C)
Item
Insertion loss
Isolation
VSWR
Input power for 1 dB compression
3rd order input intercept point
1
Switching speed
Bias current
Control current
Symbol
IL
Iso
VSWR
P1dB
IP3
Tsw
I
DD
Ictl
Min.
20
20
45
Typ.
0.5
25
1.3
24
1
0.7
80
Max.
0.8
1.5
5
1.1
150
Unit
dB
dB
dBm
dBm
s
mA
A
1
two-tone input power up to 10 dBm
Electrical Characteristics (2)
V
DD
=3 V, Vctl (L)=0 V, Vctl (H)=2.8 V3 %,
@2 GHz, Pin=10 dBm, Impedance at all ports : 50
(Ta=35 C to +85 C)
Item
Insertion loss
Isolation
VSWR
Input power for 1 dB compression
3rd order input intercept point
1
Switching speed
Bias current
Control current
Symbol
IL
Iso
VSWR
P1dB
IP3
Tsw
I
DD
Ictl
Min.
20
20
45
Typ.
0.5
25
1.3
24
1
0.7
80
Max.
1.0
1.5
5
1.3
180
Unit
dB
dB
dBm
dBm
s
mA
A
1
two-tone input power up to 10 dBm
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