200mW High Power Laser Diode
Description
The SLD302V is a gain-guided, high-power laser diodes fabricated by MOCVD.
MOCVD: Metal Organic Chemical Vapor Deposition
Features
High power
Recommended power output Po = 180mW
Low operating current
Applications
Solid state laser excitation
Medical use
Structure
GaAlAs double-hetero-type laser diode
Absolute Maximum Ratings (Tc = 25C)
Optical power output
Po
200
mW
Reverse voltage
V
R
LD
2
V
PD
15
V
Operating temperature
Topr
10 to +50
C
Storage temperature
Tstg
40 to +85
C
Pin Configuration
1
E88060B81-PS
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
SLD302V
2
Bottom View
1. LD cathode
2. PD anode
3. COMMON
1
3
2
SLD302V
Electrical and Optical Characteristics
(Tc: Case temperature, Tc = 25C)
Handling Precautions
Eye protection against laser beams
The optical output of laser diodes ranges from
several mW to 1W. However the optical power
density of the laser beam at the diode chip
reaches 1mW/cm
2
. Unlike gas lasers, since
laser diode beams are divergent, uncollimated
laser diode beams are fairly safe at a laser
diode. For observing laser beams, ALWAYS use
safety goggles that block infrared rays. Usage of
IR scopes, IR cameras and fluorescent plates is
also recommended for monitoring laser beams
safely.
1
Wavelength Selection Classification
Type
SLD302V-1
SLD302V-2
SLD302V-3
Wavelength (nm)
785 15
810 10
830 10
Type
SLD302V-21
SLD302V-24
SLD302V-25
Wavelength (nm)
798 3
807 3
810 3
AP
C
ATC
Safety goggles for
protection from
laser beam
IR fluorescent plate
Optical
material
Optical power output control device
temperature control device
Lens
Laser diode
Optical boad
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
Ith
Iop
Vop
p
Imon
//
X,
Y
D
Threshold current
Operating current
Operating voltage
Wavelength
1
Monitor current
Radiation angle
(F. W. H. M.
)
Positional accuracy
Differential efficiency
P
O
= 180mW
P
O
= 180mW
P
O
= 180mW
P
O
= 180mW
V
R
= 10V
P
O
= 180mW
P
O
= 180mW
P
O
= 180mW
770
0.65
150
350
1.9
0.3
28
12
0.9
200
500
3.0
840
40
17
50
3
mA
mA
V
nm
mA
degree
degree
m
degree
mW/mA
Perpendicular
Parallel
Position
Angle
F. W. H. M. : Full Width at Half Maximum
3
SLD302V
Example of Representative Characteristics
Optical power output vs.
Forward current characteristics
I
F
Forward current [mA]
P
o
O
p
t
i
c
a
l
p
o
w
e
r
o
u
t
p
u
t
[
m
W
]
Optical power output vs. Monitor current characteristics
Imon Monitor current [mA]
P
o
O
p
t
i
c
a
l
p
o
w
e
r
o
u
t
p
u
t
[
m
W
]
Threshold current vs. Temperature characteristics
Tc Case temperature [
C]
I
t
h
T
h
r
e
s
h
o
l
d
c
u
r
r
e
n
t
[
m
A
]
Power dependence of far field pattern
(parallel to junction)
Angle [degree]
R
a
d
i
a
t
i
o
n
i
n
t
e
n
s
i
t
y
(
o
p
t
i
o
n
a
l
s
c
a
l
e
)
Power depecdence of near field pattern
R
a
d
i
a
t
i
o
n
i
n
t
e
n
s
i
t
y
(
o
p
t
i
o
n
a
l
s
c
a
l
e
)
Oscillation wavelength vs. Temperature characteristics
Tc Case temperature [
C]
p
O
s
c
i
l
l
a
t
i
o
n
w
a
v
e
l
e
n
g
t
h
[
n
m
]
0
250
500
0
100
200
T
C
= 0
C
T
C
= 25
C
T
C
= 50
C
0
0.1
0.2
0
100
200
T
C
= 10
C
T
C
= 0
C
T
C
= 25
C
T
C
= 50
C
10
0
10
20
30
40
50
100
500
1000
30
20
10
0
10
20
30
T
C
= 25
C
P
O
= 180mW
P
O
= 90mW
P
O
= 30mW
50
m
T
C
= 25
C
P
O
= 180mW
P
O
= 150mW
P
O
= 100mW
P
O
= 75mW
P
O
= 50mW
P
O
= 25mW
10
0
10
20
30
40
50
780
790
830
820
810
800
P
O
= 180mW
T
C
= 10
C
4
SLD302V
Differential efficiency vs. Temperature characteristics
Tc Case temperature [
C]
10
0
50
40
30
20
10
0
0.5
1.0
1.5
D
D
i
f
f
e
r
e
n
t
i
a
l
e
f
f
i
c
i
e
n
c
y
[
m
W
/
m
A
]
Power dependence of polarization ratio
Po Optical power output [mW]
0
50
100
150
200
250
0
20
60
40
80
P
o
l
a
r
i
z
a
t
i
o
n
r
a
t
i
o
Tc = 25
C
5
SLD302V
Wavelength [nm]
800
810
805
R
e
l
a
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tc = 25
C
Po = 40mW
Wavelength [nm]
800
810
805
R
e
l
a
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tc = 25
C
Po = 120mW
Wavelength [nm]
800
810
805
R
e
l
a
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tc = 25
C
Po = 200mW
Wavelength [nm]
800
810
805
R
e
l
a
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tc = 25
C
Po = 80mW
Wavelength [nm]
800
810
805
R
e
l
a
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tc = 25
C
Po = 160mW
Power dependence of wavelength
6
SLD302V
Wavelength [nm]
805
825
815
R
e
l
a
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tc = 6
C
Wavelength [nm]
805
825
815
R
e
l
a
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tc = 12
C
Wavelength [nm]
805
825
815
R
e
l
a
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tc = 23
C
Wavelength [nm]
805
825
815
R
e
l
a
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tc = 35
C
Wavelength [nm]
805
825
815
R
e
l
a
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tc = 45
C
Temperature dependence of wavelength (Po = 180mW)
7
SLD302V
Package Outline
Unit: mm
M-248 (LO-11)
Reference
Slot
1.0
0
.
4
Photo
Diode
2
3
1
Window
Glass
Reference
Plane
LD Chip
9.0 0.015
0
7.7 MAX
6.9 MAX
3.5
0
.
6
M
A
X
2
.
4
5
3
.
4
M
A
X
1
.
5
7
.
0
M
A
X
3
0.45
PCD
2.54
Optical
Distance = 2.55 0.05
SONY CODE
EIAJ CODE
JEDEC CODE
M-248
PACKAGE WEIGHT
1.2g
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