1
2 Megabit (256K x 8) Multi-Purpose Flash
SST39SF020
Preliminary Specifications
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
1998 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF is a trademark of Silicon storage Technology, Inc.
326-10 12/98
These specifications are subject to change without notice.
FEATURES:
Organized as 256 K X 8
Single 5.0V Read and Write Operations
Superior Reliability
Endurance: 100,000 Cycles (typical)
Greater than 100 years Data Retention
Low Power Consumption:
Active Current: 20 mA (typical)
Standby Current: 10 A (typical)
Sector Erase Capability
Uniform 4 KByte sectors
Fast Read Access Time:
70 and 90 ns
Latched Address and Data
Fast Sector Erase and Byte Program:
Sector Erase Time: 7 ms (typical)
Chip Erase Time: 15 ms (typical)
Byte Program time: 20 s (typical)
Chip Rewrite Time: 5 seconds (typical)
Automatic Write Timing
- Internal V
pp
Generation
End of Write Detection
Toggle Bit
Data# Polling
TTL I/O Compatibility
JEDEC Standard
EEPROM Pinouts and command set
Packages Available
32-Pin PDIP
32-Pin PLCC
32-Pin TSOP (8mm x 14mm)
PRODUCT DESCRIPTION
The SST39SF020 is a 256K x 8 CMOS Multi-Purpose
Flash (MPF) manufactured with SST's proprietary, high
performance CMOS SuperFlash technology. The split
gate cell design and thick oxide tunneling injector attain
better reliability and manufacturability compared with
alternate approaches. The SST39SF020 device writes
(Program or Erase) with a 5.0V-only power supply. The
SST39SF020 device conforms to JEDEC standard
pinouts for x8 memories.
Featuring high performance byte program, the
SST39SF020 device provides a maximum byte-pro-
gram time of 30 sec. The entire memory can be erased
and programmed byte by byte typically in 5 seconds,
when using interface features such as Toggle Bit or
Data# Polling to indicate the completion of Program
operation. To protect against inadvertent write, the
SST39SF020 device has on-chip hardware and soft-
ware data protection schemes. Designed, manufac-
tured, and tested for a wide spectrum of applications, the
SST39SF020 device is offered with a guaranteed endur-
ance of 10,000 cycles. Data retention is rated at greater
than 100 years.
The SST39SF020 device is suited for applications that
require convenient and economical updating of program,
configuration, or data memory. For all system applica-
tions, the SST39SF020 device significantly improves
performance and reliability, while lowering power
consumption. The SST39SF020 inherently uses less
energy during erase and program than alternative flash
technologies. The total energy consumed is a function of
the applied voltage, current, and time of application.
Since for any given voltage range, the SuperFlash tech-
nology uses less current to program and has a shorter
erase time, the total energy consumed during any Erase
or Program operation is less than alternative flash tech-
nologies. The SST39SF020 device also improves flex-
ibility while lowering the cost for program, data, and
configuration storage applications.
The SuperFlash technology provides fixed Erase and
Program times, independent of the number of endurance
cycles that have occurred. Therefore the system soft-
ware or hardware does not have to be modified or de-
rated as is necessary with alternative flash technologies,
whose erase and program times increase with accumu-
lated endurance cycles.
To meet high density, surface mount requirements, the
SST39SF020 device is offered in 32-pin TSOP and 32-
pin PLCC packages. A 600 mil, 32-pin PDIP is also
available. See Figures 1 and 2 for pinouts.
Device Operation
Commands are used to initiate the memory operation
functions of the device. Commands are written to the
device using standard microprocessor write sequences.
A command is written by asserting WE# low while
2
1998 Silicon Storage Technology, Inc.
326-10 12/98
2 Megabit Multi-Purpose Flash
SST39SF020
Preliminary Specifications
keeping CE# low. The address bus is latched on the
falling edge of WE# or CE#, whichever occurs last. The
data bus is latched on the rising edge of WE# or CE#,
whichever occurs first.
Read
The Read operation of the SST39SF020 device is con-
trolled by CE# and OE#, both have to be low for the
system to obtain data from the outputs. CE# is used for
device selection. When CE# is high, the chip is dese-
lected and only standby power is consumed. OE# is the
output control and is used to gate data from the output
pins. The data bus is in high impedance state when either
CE# or OE# is high. Refer to the Read cycle timing
diagram for further details (Figure 3).
Byte Program Operation
The SST39SF020 device is programmed on a byte-by-
byte basis. The Program operation consists of three
steps. The first step is the three-byte-load sequence for
Software Data Protection. The second step is to load
byte address and byte data. During the Byte Program
operation, the addresses are latched on the falling edge
of either CE# or WE#, whichever occurs last. The data is
latched on the rising edge of either CE# or WE#, which-
ever occurs first. The third step is the internal Program
operation which is initiated after the rising edge of the
fourth WE# or CE#, whichever occurs first. The Program
operation, once initiated, will be completed, within 30 s.
See Figures 4 and 5 for WE# and CE# controlled
Program operation timing diagrams and Figure 14 for
flowcharts. During the Program operation, the only valid
reads are Data# Polling and Toggle Bit. During the
internal Program operation, the host is free to perform
additional tasks. Any commands written during the inter-
nal Program operation will be ignored.
Sector Erase Operation
The Sector Erase operation allows the system to erase
the device on a sector by sector basis. The sector
architecture is based on uniform sector size of 4 KByte.
The Sector Erase operation is initiated by executing a
six-byte-command load sequence for software data pro-
tection with sector erase command (30H) and sector
address (SA) in the last bus cycle. The address lines
A12-A17 will be used to determine the sector address.
The sector address is latched on the falling edge of the
sixth WE# pulse , while the command (30H) is latched on
the rising edge of the sixth WE# pulse. The internal Erase
operation begins after the sixth WE# pulse. The end of
Erase can be determined using either Data# Polling or
Toggle Bit methods. See Figure 8 for timing waveforms.
Any commands written during the Sector Erase opera-
tion will be ignored.
Chip-Erase Operation
The SST39SF020 device provides a Chip-Erase opera-
tion, which allows the user to erase the entire memory
array to the "1's" state. This is useful when the entire
device must be quickly erased.
The Chip Erase operation is initiated by executing a six-
byte software data protection command sequence with
Chip Erase command (10H) with address 5555H in the
last byte sequence. The Erase operation begins with the
rising edge of the sixth WE# or CE#, whichever occurs
first. During the Erase operation, the only valid read is
Toggle Bit or Data# Polling. See Table 4 for the command
sequence, Figure 9 for timing diagram, and Figure 17 for
the flowchart. Any commands written during the Chip
Erase operation will be ignored.
Write Operation Status Detection
The SST39SF020 device provides two software means
to detect the completion of a Write (Program or Erase)
cycle, in order to optimize the system write cycle time.
The software detection includes two status bits : Data#
Polling (DQ
7
) and Toggle Bit (DQ
6
). The end of write
detection mode is enabled after the rising edge of WE#
which initiates the internal program or erase cycle.
The actual completion of the nonvolatile write is asyn-
chronous with the system; therefore, either a Data#
Polling or Toggle Bit read may be simultaneous with the
completion of the Write cycle. If this occurs, the system
may possibly get an erroneous result, i.e., valid data may
appear to conflict with either DQ
7
or DQ
6
. In order to
prevent spurious rejection, if an erroneous result occurs,
the software routine should include a loop to read the
accessed location an additional two (2) times. If both
reads are valid, then the device has completed the Write
cycle, otherwise the rejection is valid.
Data# Polling (DQ
7
)
When the SST39SF020 device is in the internal Program
operation, any attempt to read DQ
7
will produce the
complement of the true data. Once the Program opera-
tion is completed, DQ
7
will produce true data. The device
is then ready for the next operation. During internal Erase
operation, any attempt to read DQ7 will produce a `0'.
Once the internal Erase operation is completed, DQ7 will
produce a `1'. The Data# Polling is valid after the rising
edge of fourth WE# (or CE#) pulse for Program opera-
tion. For sector or chip erase, the Data# Polling is valid
after the rising edge of sixth WE# (or CE#) pulse. See
Figure 6 for Data# Polling timing diagram and Figure 15
for a flowchart.
3
1998 Silicon Storage Technology, Inc.
326-10 12/98
2 Megabit Multi-Purpose Flash
SST39SF020
Preliminary Specifications
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Toggle Bit (DQ
6
)
During the internal Program or Erase operation, any con-
secutive attempts to read DQ
6
will produce alternating 0's
and 1's, i.e., toggling between 0 and 1. The Toggle Bit will
begin with "1". When the internal Program or Erase opera-
tion is completed, the toggling will stop. The device is then
ready for the next operation. The Toggle Bit is valid after the
rising edge of fourth WE# (or CE#) pulse for Program
operation. For Sector or Chip Erase, the Toggle Bit is valid
after the rising edge of sixth WE# (or CE#) pulse. See
Figure 7 for Toggle Bit timing diagram and Figure 15 for a
flowchart.
Data Protection
The SST39SF020 device provides both hardware and
software features to protect nonvolatile data from inadvert-
ent writes.
Hardware Data Protection
Noise/Glitch Protection: A WE# or CE# pulse of less than
5 ns will not initiate a write cycle.
V
CC
Power Up/Down Detection: The write operation is
inhibited when V
CC
is less than 2.5V.
Write Inhibit Mode: Forcing OE# low, CE# high, or WE#
high will inhibit the Write operation. This prevents inadvert-
ent writes during power-up or power-down.
Software Data Protection (SDP)
The SST39SF020 provides the JEDEC approved soft-
ware data protection scheme for all data alteration opera-
tions, i.e., Program and Erase. Any Program operation
requires the inclusion of a series of three byte sequence.
The three byte-load sequence is used to initiate the Pro-
gram operation, providing optimal protection from inad-
vertent write operations, e.g., during the system power-up
or power-down. Any Erase operation requires the inclusion
of six byte load sequence. The SST39SF020 device is
shipped with the software data protection permanently
enabled. See Table 4 for the specific software command
codes. During SDP command sequence, invalid com-
mands will abort the device to read mode, within TRC.
Product Identification
The product identification mode identifies the device as the
SST39SF020 and manufacturer as SST. This mode may
be accessed by hardware or software operations. The
hardware operation is typically used by a programmer to
identify the correct algorithm for the SST39SF020 device.
Users may wish to use the software product identification
operation to identify the part (i.e., using the device code)
when using multiple manufacturers in the same socket. For
details, see Table 3 for hardware operation or Table 4 for
software operation, Figure 10 for the software ID entry and
read timing diagram and Figure 16 for the ID entry com-
mand sequence flowchart.
Product Identification Mode Exit/Reset
In order to return to the standard read mode, the Software
Product Identification mode must be exited. Exiting is
accomplished by issuing the Exit ID command sequence,
which returns the device to the Read operation. Please
note that the software reset command is ignored during an
internal Program or Erase operation. See Table 4 for
software command codes, Figure 11 for timing waveform
and Figure 16 for a flowchart.
F
UNCTIONAL
B
LOCK
D
IAGRAM
OF
SST39SF020
T
ABLE
1: P
RODUCT
I
DENTIFICATION
T
ABLE
Address
Data
Manufacturer's Code
0000H
BF H
Device Code
0001H
B6 H
326 PGM T1.2
Y-Decoder
I/O Buffers and Data Latches
326 ILL B1.3
Address Buffers & Latches
X-Decoder
DQ7 - DQ0
A17 - A0
OE#
CE#
WE#
2,097,152 bit
EEPROM
Cell Array
Control Logic
4
1998 Silicon Storage Technology, Inc.
326-10 12/98
2 Megabit Multi-Purpose Flash
SST39SF020
Preliminary Specifications
F
IGURE
1: P
IN
A
SSIGNMENTS
FOR
32-
PIN
TSOP P
ACKAGES
(8mm x 14mm)
F
IGURE
2: P
IN
A
SSIGNMENTS
FOR
32-
PIN
PDIP
S
AND
32-
LEAD
PLCC
S
A11
A9
A8
A13
A14
A17
WE#
VCC
NC
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
A3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
326 ILL F01.0
Standard Pinout
Top View
Die Up
5
6
7
8
9
10
11
12
13
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
A14
A13
A8
A9
A11
OE#
A10
CE#
DQ7
4 3 2 1 32 31 30
A12
A15
A16
NC
V
CC
WE#
A17
32-Lead PLCC
Top View
32-Pin
PDIP
Top View
326 ILL F02.0
14 15 16 17 18 19 20
DQ1
DQ2
V
SS
DQ3
DQ4
DQ5
DQ6
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
WE#
A17
A14
A13
A8
A9
A11
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
5
1998 Silicon Storage Technology, Inc.
326-10 12/98
2 Megabit Multi-Purpose Flash
SST39SF020
Preliminary Specifications
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
T
ABLE
2: P
IN
D
ESCRIPTION
Symbol
Pin Name
Functions
A
17
-A
0
Address Inputs
To provide memory addresses. During sector erase A
17
-A
12
address lines
will select the sector.
DQ
7
-DQ
0
Data Input/output
To output data during read cycles and receive input data during write
cycles. Data is internally latched during a write cycle. The outputs are in
tri-state when OE# or CE# is high.
CE#
Chip Enable
To activate the device when CE# is low.
OE#
Output Enable
To gate the data output buffers.
WE#
Write Enable
To control the write operations.
Vcc
Power Supply
To provide 5-volt supply ( 10%)
Vss
Ground
NC
No Connection
Unconnected pins.
326 PGM T2.1
T
ABLE
3: O
PERATION
M
ODES
S
ELECTION
Mode
CE#
OE#
WE#
A9
DQ
Address
Read
V
IL
V
IL
V
IH
A
IN
D
OUT
A
IN
Program
V
IL
V
IH
V
IL
A
IN
D
IN
A
IN
Erase
V
IL
V
IH
V
IL
X
X
Sector address, XXh for
chip erase
Standby
V
IH
X
X
X
High Z
X
Write Inhibit
X
V
IL
X
X
High Z/D
OUT
X
X
X
V
IH
X
High Z/D
OUT
X
Product Identification
Hardware Mode
V
IL
V
IL
V
IH
V
H
Manufacturer Code (BF)
A
17
- A
1
= V
IL
, A
0
= V
IL
Device Code (B6)
A
17
- A
1
= V
IL
, A
0
= V
IH
Software Mode
V
IL
V
IL
V
IH
A
IN
ID Code
See Table 4
326 PGM T3.4
PDF 
ZIP