2005 SST Communications Corp.
S71284-00-000
1/05
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Preliminary Specifications
FEATURES:
Gain:
~24 dB gain across the 4.9-5.8 GHz band
High linear output power:
~25 dBm P1dB
EVM~4% at 18 dBm over 4.9-5.8 GHz for 64
QAM/54 Mbps operation
ACPR below IEEE 802.11a Mask up to 21 dBm
across full band
Low idle current
~80 mA I
CQ
Low shut-down current (< 1 A)
20 dB dynamic range on-chip differential linear
power detection
Simple RF matching circuits
Packages available
16-contact VQFN (3mm x 3mm)
Non-Pb (lead-free) packages available
APPLICATIONS:
WLAN (IEEE 802.11a)
Japan WLAN
HyperLAN2
Multimedia
PRODUCT DESCRIPTION
The SST11LP11 is a high-performance power amplifier IC
based on the highly-reliable InGaP/GaAs HBT technology.
The SST11LP11 is designed to operate over the entire
WLAN 802.11a band between 4.9-5.8 GHz frequency
band for the U.S., European, and Japanese markets while
achieving highly-linear power and low EVM.
The SST11LP11 power amplifier IC features easy board-
level usage along with on-chip linear power detection and
power-down control. These features coupled with low cur-
rent draw at maximum linear power make the SST11LP11
ideal for battery-powered 802.11a WLAN transmitter appli-
cations.
The SST11LP11 is offered in 16-contact VQFN package.
See Figure 1 for pin assignments and Table 1 for pin
descriptions.
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP11
SST11LP114.9-5.8 GHz High-Linearity Power Amplifier
Preliminary Specifications
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP11
2005 SST Communications Corp.
S71284-00-000
1/05
2
FUNCTIONAL BLOCKS
2
5
6
8
16
VCC
1
15
1
14
VCC
3
VCC
2
4
9
11
12
10
13
NC
VREF
1
VREF
2
VREF
3
Det_r
ef
NC
RFOUT
RFOUT
Det
NC
3
RFIN
RFIN
VCCb
Bias Circuit
7
1284 B1.1
F
UNCTIONAL
B
LOCK
D
IAGRAM
Preliminary Specifications
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP11
3
2005 SST Communications Corp.
S71284-00-000
1/05
PIN ASSIGNMENTS
FIGURE 1: P
IN
A
SSIGNMENTS
FOR
16-
CONTACT
VQFN
PIN DESCRIPTIONS
TABLE 1: P
IN
D
ESCRIPTION
Symbol
Pin No.
Pin Name
Type
1
1. I=Input, O=Output
Function
GND
0
Ground
The center pad should be connected to RF ground with
several low inductance, low resistance vias.
NC
1
No Connection
Unconnected pins.
RFIN
2
I
RF input, DC decoupled
RFIN
3
I
RF input, DC decoupled
VCCb
4
Power Supply
PWR
Supply voltage for bias circuit
VREF1
5
PWR
1st stage idle current control
VREF2
6
PWR
2nd stage idle current control
VREF3
7
PWR
3rd stage idle current control
Det_ref
8
O
On-chip power detector reference
Det
9
O
On-chip power detector
RFOUT
10
O
RF output
RFOUT
11
O
RF output
NC
12
No Connection
Unconnected pins.
NC
13
No Connection
Unconnected pins.
VCC3
14
Power Supply
PWR
Power supply, 3rd stage
VCC2
15
Power Supply
PWR
Power supply, 2nd stage
VCC1
16
Power Supply
PWR
Power supply, 1st stage
T1.0 1284
5
6
8
16
V
C
C
1
15
14
V
C
C
3
V
C
C
2
9
11
12
10
13
N
C
V
R
E
F
1
V
R
E
F
2
V
R
E
F
3
D
e
t
_
r
e
f
NC
RFOUT
RFOUT
Det
2
1
4
3
NC
RFIN
RFIN
VCCb
7
1284 16-vqfn P1.1
Top View
(contacts facing down)
RF and DC GND
0
Preliminary Specifications
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP11
2005 SST Communications Corp.
S71284-00-000
1/05
4
ELECTRICAL SPECIFICATIONS
The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current spec-
ifications. Refer to Figures 2 through 11 for the RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum
Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Supply Voltage to pins 4, 14, 15, 16 (V
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +5.5V
DC supply current (I
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA
Operating Temperature (T
A
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +85C
Storage Temperature (T
STG
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +120C
Maximum Junction Temperature (T
J
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Surface Mount Solder Reflow Temperature: . . . . . . . . . . . . . . . . . . . . . . . . . "with-Pb" units
1
: 240C for 3 seconds
1. Certain "with-Pb" package types are capable of 260C for 3 seconds; please consult the factory for the latest information.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "non-Pb" units: 260C for 3 seconds
O
PERATING
R
ANGE
Range
Ambient Temp
V
CC
Industrial
-40C to +85C
3.3V
TABLE
2: DC E
LECTRICAL
C
HARACTERISTICS
Symbol
Parameter
Min.
Typ
Max.
Unit
Test Conditions
V
CC
Supply Voltage at pins 4, 14, 15, 16
2.7
3.3
4.2
V
I
CC
Supply Current @ P
OUT
=21 dBm V
CC
=3.3V
260
mA
802.11a modulation
Det
Power detector output voltage
0.6
2.2
V
-10 to +22 dBm
Det_ref
Power detector output reference
0.6
V
I
CQ
Idle current
80
mA
I
OFF
Shut down current
<1.0
A
VREG1,2,3
Reference Voltages for typical applications
2.90
V
T2.0 1284
TABLE
3: AC E
LECTRICAL
C
HARACTERISTICS
FOR
C
ONFIGURATION
Symbol
Parameter
Min.
Typ
Max.
Unit
F
L-U
Frequency range
4.9
5.8
GHz
P
OUT
Output power @ P
IN
= -6 dBm for OFDM signal
18
dBm
G
Small signal gain
24
dB
S
Power detector sensitivity
0.04
V/dB
G
VAR1
Gain variation over band (4900~5855 MHz)
1.75
dB
2f, 3f, 4f, 5f
Harmonics at 21 dBm
-40
dBc
T3.0 1284
Preliminary Specifications
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP11
5
2005 SST Communications Corp.
S71284-00-000
1/05
TYPICAL PERFORMANCE CHARACTERISTICS
T
EST
C
ONDITIONS
: V
CC
= 3.3V, T
A
= 25C, VREG1,2,3 = 2.85V
UNLESS
OTHERWISE
NOTED
FIGURE 2: S-P
ARAMETERS
-40
-35
-30
-25
-20
-15
-10
-5
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
Frequency (GHz)
S1
1 (d
B)
-80
-70
-60
-50
-40
-30
-20
-10
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
Frequency (GHz)
S12 (
dB)
-40
-30
-20
-10
0
10
20
30
40
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
Frequency (GHz)
S
21 (
d
B
)
-30
-25
-20
-15
-10
-5
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
Frequency (GHz)
S2
2
(
d
B)
1284 S-Parms.0.0
Preliminary Specifications
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP11
2005 SST Communications Corp.
S71284-00-000
1/05
6
TWO-TONE MEASUREMENTS
T
EST
C
ONDITIONS
:
F
= 1 MH
Z
FIGURE 3: P
OWER
G
AIN
VERSUS
P
OWER
O
UTPUT
FIGURE 4: S
UPPLY
C
URRENT
V
ERSUS
O
UTPUT
P
OWER
20
22
24
26
28
30
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Output Power (dBm)
Po
w
e
r
Ga
in
(d
B)
4.92 GHz
5.18 GHz
5.32 GHz
5.805 GHz
1284 PGain
vOutP
.0.0
75
125
175
225
275
325
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Output Power (dBm)
Su
ppl
y Cur
r
e
nt (mA
)
4.92 GHz
5.18 GHz
5.32 GHz
5.805 GHz
1284 SCurrVsOutPwr
.0.0
Preliminary Specifications
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP11
7
2005 SST Communications Corp.
S71284-00-000
1/05
FIGURE 5: IMD3
VERSUS
O
UTPUT
P
OWER
FIGURE 6: D
ETECTOR
V
OLTAGE
VERSUS
O
UTPUT
P
OWER
-50
-45
-40
-35
-30
-25
-20
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Output Power (dBm)
IMD3 (d
Bc)
4.92 GHz
5.18 GHz
5.32 GHz
5.805 GHz
1284 IMD3vOutP
.0.0
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
-2
0
2
4
6
8
10
12
14
16
18
20
22
24
Output Power (dBm)
Detec
to
r
Voltage (
V
)
4.9 GHz
5.18 GHz
5.32 GHz
5.805 GHz
1284 DetVvsOutPwr
.0.0
Preliminary Specifications
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP11
2005 SST Communications Corp.
S71284-00-000
1/05
8
OFDM SIGNAL MEASUREMENTS
T
EST
C
ONDITIONS
: 54 M
BPS
OFDM S
IGNAL
FIGURE 7: EVM
VERSUS
O
UTPUT
P
OWER
0
1
2
3
4
5
6
7
8
9
10
9
10
11
12
13
14
15
16
17
18
19
20
21
Output Power (dBm)
EVM (%)
Freq = 4.92 GHz
Freq = 5.18 GHz
Freq = 5.32 GHz
Freq = 5.805 GHz
1284 EVMvOutP
.0.0
Preliminary Specifications
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP11
9
2005 SST Communications Corp.
S71284-00-000
1/05
FIGURE 8: S
PECTRUM
M
ASK
@ P
OUT
= 21
D
B
M
WITH
F
REQUENCY
= 4.92 GH
Z
AND
I
CC
= 235
M
A
FIGURE 9: S
PECTRUM
M
ASK
@ P
OUT
= 21
D
B
M
WITH
F
REQUENCY
= 5.18 GH
Z
AND
I
CC
= 230
M
A
1284 A
CPR.4.92GHz.0.0
1284 A
CPR.5.18GHz230.0.0
Preliminary Specifications
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP11
2005 SST Communications Corp.
S71284-00-000
1/05
10
FIGURE 10: S
PECTRUM
M
ASK
@ P
OUT
= 21
D
B
M
WITH
F
REQUENCY
= 5.32 GH
Z
AND
I
CC
= 220
M
A
FIGURE 11: S
PECTRUM
M
ASK
@ P
OUT
= 21
D
B
M
WITH
F
REQUENCY
= 5.805 GH
Z
AND
I
CC
= 215
M
A
1284 A
CPR.5.18GHz220.0.0
1284 A
CPR.5.805GHz.0.0
Preliminary Specifications
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP11
11
2005 SST Communications Corp.
S71284-00-000
1/05
FIGURE 12: T
YPICAL
S
CHEMATIC
FOR
H
IGH
-P
OWER
, H
IGH
-E
FFICIENCY
802.11
A
A
PPLICATIONS
VCC
50
100pF
50
RFin
VREG2
10F
0.1 F
4.7pF*
* As close as possible to package
**For 8~10 mil FR4 dielectric board
100pF
0.1uF
40~60mil/10~12mil
Bias Circuit
10
2
5
6
7
8
9
11
12
16
15
14
13
3
4
1
50
RFOUT
0.5 pF/0402 Hi-Q, typically
Johanson S-series
80mil/60mil**
91
Det_ref
Det
0.1F*
10pF
10pF
0.1F
0.1F 25
42
50
42
100pF
VREG1
VREG3
1284 Schematic.0.1
Preliminary Specifications
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP11
2005 SST Communications Corp.
S71284-00-000
1/05
12
PRODUCT ORDERING INFORMATION
Valid combinations for SST11LP11
SST11LP11-QVC
SST11LP11-QVCE
SST11LP11 Evaluation Kits
SST11LP11-QVC-K
SST11LP11-QVCE-K
Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales
representative to confirm availability of valid combinations and to determine availability of new combinations.
SST11LP
11
- QVC
E
SSTxxLP
xx
-
XXX
X
Environmental Attribute
E
1
= non-Pb contact (lead) finish
Package Modifier
C = 16 contact
Package Type
QV = VQFN
Product Family Identifier
Product Type
P = Power Amplifier
Voltage
L = 3.0-3.6V
Frequency of Operation
1 = 4.9-5.8 GHz
Product Line
1 = SST Communications
1. Environmental suffix "E" denotes non-Pb solder.
SST non-Pb solder devices are "RoHS Compliant".
Preliminary Specifications
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP11
13
2005 SST Communications Corp.
S71284-00-000
1/05
PACKAGING DIAGRAMS
16-
CONTACT
V
ERY
-
THIN
Q
UAD
F
LAT
N
O
-
LEAD
(VQFN)
SST P
ACKAGE
C
ODE
: QVC
TABLE
4: R
EVISION
H
ISTORY
Revision
Description
Date
00
S71284: SST conversion of data sheet GP1111
Jan 2005
Note: 1. Complies with JEDEC JEP95 MO-220I, variant VEED except external paddle nominal dimensions.
2. From the bottom view, the pin #1 indicator may be either a 45-degree chamfer or a half-circle notch.
3. The external paddle is electrically connected to the die back-side and possibly to certain V
SS
leads.
This paddle can be soldered to the PC board; it is suggested to connect this paddle to the V
SS
of the unit.
Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device.
4. Untoleranced dimensions are nominal target dimensions.
5. All linear dimensions are in millimeters (max/min).
16-vqfn-3x3-QVC-0.0
1.7
0.5 BSC
See notes
2 and 3
Pin #1
0.30
0.18
0.076
1.7
0.2
3.00 0.10
3.00 0.10
0.05 Max
0.45
0.35
1.00
0.80
Pin #1
TOP VIEW
BOTTOM VIEW
SIDE VIEW
1mm
Preliminary Specifications
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP11
2005 SST Communications Corp.
S71284-00-000
1/05
14
CONTACT INFORMATION
Marketing
SST Communications Corp.
2951 28th Street, Ste. 2040
Santa Monica, CA 90405
Tel: 310-581-1650 x27
Fax: 310-581-1663
Sales
NORTH AMERICA
ASIA PACIFIC NORTH
Silicon Storage Technology, Inc.
SST Macao
Les Crowder
H. H. Chang
Technical Sales Support - Major Accounts
Senior Director, Sales
1922 Colina Salida Del Sol
Room A, 8th Floor,
San Clemente, CA 92673-3652
USA
Macao Financial Centre,
Tel: 949-495-6437
No. 230-246, Rua Pequim, Macao
Cell: 714-813-6636
Tel: (853) 706-022
Fax: 949-495-6364
Fax: (853) 706-023
E-mail: lcrowder@sst.com
E-mail: hchang@sst.com
EUROPE
ASIA PACIFIC SOUTH
Silicon Storage Technology Ltd.
SST Communications Co.
Ralph Thomson
Andy Chang
Applications Manager
Director of Sales
Mark House
2F, No. 415, Tiding Blvd., Sec.2,
9-11 Queens Road
Neihu, Taipei,
Hersham KT12 5LU
UK
Taiwan, R.O.C.
Tel: +44 (0) 1869 321 431
Tel: 02-2656-2888 x220
Cell: +44 (0) 7787 508 919
Fax: 02-2656-2889
E-mail: rthomson@sst.com
E-mail: achang@sst.com
JAPAN
KOREA
SST Japan
SST Korea
Yashushi Yoshinaga
Charlie Shin
Sales Manager
Country Manager
6F Kose #2, 1-14-20 Shin-Yokohama,
Rm# 1101 DonGu Root Bldg, 16-2 Sunae-Dong,
Kohoku-ku, Yokohama 222-0033
Bundang-Gu, Sungnam, Kyunggi-Do
Kanagawa, Japan
Korea, 463-020
Tel: (81) 45-471-1851
Tel: (82) 31-715-9138
Fax: (81) 45-471-3285
Fax: (82) 31-715-9137
Email: yoshi@sst.com
Email: cshin@sst.com
Silicon Storage Technology, Inc. 1171 Sonora Court Sunnyvale, CA 94086 Telephone 408-735-9110 Fax 408-735-9036
www.SuperFlash.com or www.sst.com
PDF 
ZIP