Preliminary
Product Description
EDS-101994 Rev B
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
Preliminary
CGA-6618
Dual CATV Broadband High
Linearity GaAs HBT Amplifier
Product Features
Excellent CSO/CTB/XMOD Performance at
+34 dBmV Output Power per Tone
Dual Devices in each SOIC-8 Package simplify
Push-Pull configuration PC board layout
Operates from a single supply
Dropping Resistor provides
Temperature Compensation
Applications
CATV Head End Driver and Predriver Amplifier
CATV Line Driver Amplifier
Stanford Microdevices CGA-6618 is a high performance
GaAs HBT MMIC Amplifier. Designed with the InGaP
process technology for excellent reliability. A Darlington
configuration is utilized for broadband performance. The
heterojunction increases breakdown voltage and minimizes
leakage current between junctions. The amplifier contains
two amplifiers for use in wideband Push-Pull CATV amplifiers
requiring excellent second order performance. The second
and third order non-linearities are greatly improved in the
push pull configuration.
Key 75 Ohm Parameters at Room Temperature 50-860MHz CATV Band Data
V
:
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Amplifier Configuration
Note: Measured in Push-Pull Application test board
2
CGA-6618 Dual GaAs HBT Amplifier
EDS-101994 Rev B
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
Preliminary
-25
-20
-15
-10
-5
0
200
400
600
800
1000
-40C
25C
85C
-25
-20
-15
-10
-5
0
200
400
600
800
1000
-40C
25C
85C
Input Return Loss vs. Frequency
S1
1
(dB)
Frequency (MHz)
Output Return Loss vs. Frequency
S22
(dB)
Frequency (MHz)
5
7
9
11
13
15
0
200
400
600
800
1000
-40C
25C
85C
Gain vs. Frequency
S21
(dB)
Frequency (MHz)
Typical S-Parameters @ V
S
=8V, I
D
=160mA, R
BIAS
=39 Ohms, T
L
=+25C
Absolute Maximum Ratings
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Bias Conditions should also satisfy the following
expression: I
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)/R
th
,j-l
3
CGA-6618 Dual GaAs HBT Amplifier
EDS-101994 Rev B
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
Preliminary
6 0
6 5
7 0
7 5
8 0
8 5
9 0
0
0 .2
0 .4
0 .6
0 .8
1
-4 0C
2 5C
8 5C
2 0
2 5
3 0
3 5
4 0
4 5
5 0
0
0 .2
0 .4
0 .6
0 .8
1
-40C
25C
85C
2 0
3 0
4 0
5 0
6 0
7 0
8 0
9 0
1 0 0
0
3
6
9
1 2
1 5
6 6 M Hz
1 0 0 M H z
2 5 0 M H z
5 0 0 M H z
2 0
3 0
4 0
5 0
6 0
7 0
8 0
9 0
1 0 0
0
3
6
9
1 2
1 5
6 6 M H z
1 0 0 M H z
2 5 0 M H z
5 0 0 M H z
IP3
(dBm)
Frequency (MHz)
IP2 vs. Temperature
IP2
(dBm)
Frequency (MHz)
IP3 vs. Temperature
Second Harmonic vs. Pout and Freq.
Data shown is typical at 25C
IM2
(dBc)
Pout (dBm)
Third Harmonic vs. Pout and Freq.
Data shown is typical at 25C
IM3
(dBc)
Pout (dBm)
4 0
5 0
6 0
7 0
8 0
9 0
1 0 0
1 1 0
0
1 0 0
2 0 0
3 0 0
4 0 0
5 0 0
6 0 0
C TB
C S O -
C S O +
X m o d
0
1
2
3
4
5
6
0
200
400
600
800
1000
Push-Pull CGA-6618 Noise Figure
50MHz-900MHz, Typical
NF
(dB)
Frequency (MHz)
Push-Pull CGA-6618 CTB/CSO/XMOD
34 dBmV/Ch., 79 Ch.,Flat
dBc
Frequency (MHz)
Typical RF Performance @ V
S
=8V, I
D
=160mA, R
BIAS
=39 Ohms, T
L
=+25C
4
CGA-6618 Dual GaAs HBT Amplifier
EDS-101994 Rev B
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
Preliminary
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Basic Application Schematic 50-860 MHz
Evalution Board Layout 50-860 MHz
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ECB-101611 Rev A
ESOP-8
Push-Pull
Eval Board
RF OUTPUT
RF INPUT
.01uF
1000pF
68pF
220nH
220nH
68pF
1000pF
.01uF
1000pF
1000pF
1000pF
1000pF
Balun ETC1-1-13
Balun ETC1-1-13
Rbias
Rbias
1uF Tant.
1uF Tant.
.16 [4.02]
.11 [2.71]
.33 [8.42]
.15 [3.81]
.24 [6.22]
.05 [1.27]
.02 [.60]
Recommended Land Pattern
2(V
S
-V
D
)
I
D
R
BIAS
=
CGA-6618
SOIC-08
1000 pF
0.01
F
1000pF
68pF
V
s
R
BIAS
Amp 1
1000 pF
1000 pF
1000 pF
220 nH
Macom
ETC1-1-13
Macom
ETC1-1-13
1
F Tant.
1
F Tant.
0.01
F
1000pF
68pF
220 nH
V
s
R
BIAS
Amp 2
1
4
8
5
6,7
2,3
5
CGA-6618 Dual GaAs HBT Amplifier
EDS-101994 Rev B
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
Preliminary
.078 [1.969]
DETAIL A
.061 [1.549]
.155
[3.937]
.025
.013 [.33] x
45
.008
.003
[.076]
SEATING PLANE
1
5
3
2
BOTTOM VIEW
.058 [1.473]
TOP VIEW
SIDE VIEW
END VIEW
PARTING LINE
.008 [.203]
.045 [1.143]
.035 [.889]
4
6
7
8
.194 [4.93]
.061
[1.549]
.016 [.406]
.050
[1.27]
.194
[4.928]
5
SEE DETAIL A
.236 [5.994]
.155 [3.937]
EXPOSED
PAD
Date Code
CGA
6618
Package Outline Drawing
Note: Parts need to be baked prior to use as discussed in application note EAN-101472 (Special handling information
for Exposed Pad
TM
SOIC-8 products) to ensure no moisture is trapped in the encapsulated package. In production,
this baking procedure is not necessary if parts are used within 24 hours of opening the sealed shipping materials.
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1
6
6
-
A
G
C
0
0
5
"
7
Part Number Ordering Information
Caution: ESD sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
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