EDS-101103 Rev C
1
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
Preliminary
Preliminary
Product Description
NGA-386
DC-5000 MHz, Cascadable GaAs
HBT MMIC Amplifier
Product Features
High Gain: 18.9dB at 1950Mhz
Cascadable 50 ohm: 1.2:1 VSWR
Patented GaAs HBT Technology
Operates from Single Supply
Low Thermal Resistance Package
Unconditionally Stable
Applications
Cellular, PCS, CDPD
Wireless Data, SONET
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1
Stanford Microdevices' NGA-386 is a high performance
Gallium Arsenide Heterojunction Bipolar Transistor MMIC
Amplifier. Designed with InGaP process technology for
improved reliability, a Darlington configuration is utilized for
broadband performance up to 5 Ghz. The heterojunction
increases breakdown voltage and minimizes leakage current
between junctions. Cancellation of emitter junction
non-linearities results in higher suppression of intermodulation
products.
0
5
10
15
20
25
0
1
2
3
4
5
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dB
Small Signal Gain vs. Frequency
Frequency GHz
2
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
Preliminary
EDS-101103 Rev C
NGA-386 DC-5.0 GHz 4.0V GaAs HBT
Preliminary
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Operation of this device above any one of these
parameters may cause permanent damage.
Bias Conditions should also satisfy the following
expression: I
D
V
D
(max) < (T
J
- T
OP
)/R
th
,j-l
Key parameters, at typical operating frequencies:
3
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
Preliminary
EDS-101103 Rev C
NGA-386 DC-5.0 GHz 4.0V GaAs HBT
Preliminary
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Application Schematic for Operation at 850 MHz
Application Schematic for Operation at 1950 MHz
R bias
68pF
22nH
1uF
22pF
68pF
50 ohm
microstrip
50 ohm
microstrip
V
s
R bias
100pF
33nH
1uF
68pF
100pF
50 ohm
microstrip
50 ohm
microstrip
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For 9V operation or higher, a resistor with a power
handling capability of 1/2W or greater is recommended.
4
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
Preliminary
EDS-101103 Rev C
NGA-386 DC-5.0 GHz 4.0V GaAs HBT
Preliminary
0
5
10
15
20
25
0
1
2
3
4
5
6
7
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-25
-20
-15
-10
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2
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-15
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0
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1
2
3
4
5
6
7
S21, I
D
=35mA, T=25C
dB
dB
dB
S12, I
D
=35mA, T=25C
S22, I
D
=35mA, T=25C
S11, I
D
=35mA, T=25C
dB
S-parameters over frequency, at 25C
Frequency GHz
Frequency GHz
Frequency GHz
Frequency GHz
5
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
Preliminary
EDS-101103 Rev C
NGA-386 DC-5.0 GHz 4.0V GaAs HBT
Preliminary
Typical S-Parameters, I
D
= 35mA ( No external matching, de-embedded to device leads)
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6
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
Preliminary
EDS-101103 Rev C
NGA-386 DC-5.0 GHz 4.0V GaAs HBT
Preliminary
Part Number Ordering Information
r
e
b
m
u
N
t
r
a
P
e
z
i
S
l
e
e
R
l
e
e
R
/
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e
c
i
v
e
D
6
8
3
-
A
G
N
"
7
0
0
0
1
Caution: ESD sensitive
Appropriate precautions in handling, packaging and
testing devices must be observed.
Package Dimensions
PCB Pad Layout
The part will be symbolized with a "N3" designator
on the top surface of the package.
Part Symbolization
N3
N3
7
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
Preliminary
EDS-101103 Rev C
NGA-386 DC-5.0 GHz 4.0V GaAs HBT
Preliminary
D
ESCRIPTION
S
YMBOL
S
IZE
(
MM
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Component Tape and Reel Packaging
Tape Dimensions
For 86 Outline
PDF 
ZIP