SHF-0198
DC-12 GHz, 0.5 Watt
AIGaAs/GaAs HFET
Product Features
Patented AIGaAs/GaAs Heterostructure FET
Technology
+27dBm Output Power at 1dB Compression
+38 dBm Output IP3
High Power Added Efficiency - up to 40% at
Class A
17dB Gain @ 900 MHz, 14dB Gain @ 1.9GHz
Applications
AMPS, PCS Basestations
VSAT
Product Description
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
S y m b o l
P a r a m e t e r s : T e s t C o n d i t i o n s
U n i t s
M i n .
T y p .
M a x .
G p
P o w e r G a i n
f = 0 . 9 G H z
f = 1 . 9 G H z
f = 2 . 5 G H z
d B
d B
d B
1 5
1 2
1 7
1 4
1 2
P 1 d B
O u t p u t P o s e r a t 1 d B C o m p r e s s i o n
f = 0 . 9 G H z
f = 1 . 9 G H z
f = 2 . 5 G H z
d B
d B
d B
+ 2 6 . 5
+ 2 6 . 3
+ 2 7 . 5
+ 2 7 . 3
+ 2 7 . 0
I P 3
O u t p u t T h i r d O r d e r I n t e r c e p t P o i n t
f = 0 . 9 G H z
f = 1 . 9 G H z
f = 2 . 5 G H z
d B
d B
d B
+ 3 8
+ 3 8
+ 3 7
N F o p t
N o i s e F i g u r e
f = 0 . 9 G H z
f = 1 . 9 G H z
f = 2 . 5 G H z
d B
d B
d B
1 . 8
2 . 2
2 . 5
I d s s
S a t u r a t e d D r a i n C u r r e n t : V d s = 3 V ,
V g s = 0 V
m A
3 0 0
G m
T r a n s c o n d u c t a n c e : V d s = 3 V , V g s = 0 V
m S
1 7 5
V p
P i n c h - o f f V o l t a g e : V d s = 3 V , I d s = 1 m A
V
- 2 . 2
V b g s
G a t e - t o - S o u r c e B r e a k d o w n V o l t a g e
V
- 2 0
- 1 2
V b g d
G a t e - t o - D r a i n B r e a k d o w n V o l t a g e
V
- 2 0
- 1 2
Electrical Specifications at Ta = 25C
Stanford Microdevices' SHF-0198 series is a high perfor-
mance AlGaAs/GaAs Heterostructure FET housed in a
low-cost stripline-mount ceramic package. HFET technol-
ogy improves breakdown voltage while minimizing Schottky
leakage current for higher power-added efficiency and
improved linearity.
Output power at 1dB compression for the SHF-0198 is
+27dBm when biased for Class A operation at 9V and
150mA. This HFET is also characterized at 5V for lower
voltage applications.
This device can be used in both analog and digital wireless
communication infrastructure and subscriber equipment
including cellular, PCS, CDPD, wireless data and pagers.
Output Power vs. Frequency
24
26
28
30
DC
2
4
6
8
10
12
dBm
GHz
3-21
High Power GaAs FET
s
SHF-0198 DC-12 GHz 0.5 Watt HFET
|S11| vs. Frequency
|S12| vs. Frequency
|S22| vs. Frequency
TOIP vs. Frequency
Typical S-Parameters Vds = 9.0V, Id = 150mA
F r e q G H z
| S 1 1 |
S 1 1 A n g
| S 2 1 |
S 2 1 A n g
| S 1 2 |
S 1 2 A n g
| S 2 2 |
S 2 2 A n g
. 1 0 0
0 . 8 9 1
- 1 2
1 1 . 8 2
1 7 7
. 0 0 5
8 9
. 5 3 9
- 4
. 5 0 0
0 . 9 2 8
- 6 4
1 0 . 8 4
1 5 0
. 0 2 3
7 0
. 5 2 9
- 2 7
1 . 0 0
0 . 8 8 8
- 9 7
9 . 4 4
1 2 2
. 0 3 7
6 3
. 4 7 7
- 4 8
2 . 0 0
0 . 8 0 4
- 1 3 8
7 . 9 4
9 7
. 0 4 3
4 7
. 4 6 8
- 7 4
3 . 0 0
0 . 8 1 3
- 1 6 7
5 . 6 9
7 0
. 0 4 9
4 4
. 4 9 3
- 1 0 3
4 . 0 0
0 . 8 0 4
1 7 2
3 . 9 8
5 2
. 0 5 3
6 0
. 5 3 1
- 1 2 3
5 . 0 0
0 . 8 4 6
1 5 5
2 . 7 6
3 5
. 0 7 4
6 5
. 6 0 3
- 1 4 5
6 . 0 0
0 . 9 1 4
1 3 7
2 . 0 2
2 0
. 0 9 2
6 9
. 6 7 0
- 1 5 9
7 . 0 0
0 . 9 1 7
1 1 9
1 . 6 6
- 1
. 1 3 7
5 8
. 8 2 2
1 4 7
8 . 0 0
0 . 9 2 6
1 0 1
1 . 4 5
- 4
. 1 1 5
6 0
. 8 0 2
1 4 8
9 . 0 0
0 . 9 6 7
8 7
1 . 3 7
- 1 1
. 2 0 5
5 6
. 9 4 2
1 3 2
1 0 . 0 0
0 . 9 7 0
6 5
1 . 3 3
- 3 4
. 1 6 7
4 1
. 9 4 7
1 0 0
1 1 . 0 0
0 . 9 3 7
5 4
1 . 3 8
- 3 1
. 1 8 6
4 2
. 9 5 2
8 9
1 2 . 0 0
0 . 9 0 6
2 1
1 . 3 3
- 3 8
. 2 0 7
3 9
. 8 7 9
5 1
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
-20
-15
-10
-5
0
DC
2
4
6
8
10
12
-60
-40
-20
0
DC
2
4
6
8
10
12
-2 0
-1 5
-1 0
-5
0
0
2
4
6
8
1 0
1 2
3 4
3 5
3 6
3 7
3 8
3 9
0
2
4
6
8
1 0
1 2
(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 30 mils long, connected to the gate and drain pads on the die)
dB
GHz
GHz
dB
dBm
dB
GHz
GHz
High Power GaAs FET
s
Typical Performance at 25
C (Vds = 9V, Ids = 150mA)
|S21| and MAG vs. Frequency
0
5
10
15
20
25
30
DC
2
4
6
8
10
12
M AG
S21
GHz
dB
3-22
SHF-0198 DC-12 GHz 0.5 Watt HFET
Absolute Maximum Ratings
Parameter
Symbol
Absolute
Maximum
Drain to Source Voltage
V
DS
+10V
Gate to Source Voltage
V
GS
-5V
Drain Current
I
DS
IDSS
RF Input Power
P
IN
100 mW
Channel Temperature
T
CH
175 C
Storage Temperature
T
STG
-65 to +175 C
Thermal Resistance, Junction-
Ground Lead
R
IN
36 degC/W
Notes:
1. Operation of this device above any one of these parameters
may cause permanent damage.
2. Mounting Surface Temperature = 25
C
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
Outline Drawing
Pin Designation
1
Gate
2
Source
3
Drain
Part Number
Devices Per Tray
SHF-0198
100
Part Number Ordering Information
3-23
High Power GaAs FET
s
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