Product Description
Stanford Microdevices' SNA-576 is a GaAs monolithic
broadband amplifier housed in a low-cost stripline ceramic
package. This amplifier provides 19dB of gain when biased
at 70mA and 5.0V.
External DC decoupling capacitors determine low fre-
quency response. The use of an external resistor allows
for bias flexibility and stability.
These unconditionally stable amplifiers are designed for
use as general purpose 50 ohm gain blocks. Also
available in chip form (SNA-500), its small size (0.4mm x
0.4mm) and gold metallization make it an ideal choice for
use in hybrid circuits.
The SNA-576 is available in tape and reel at 1000, 3000 and
5000 devices per reel.
SNA-576
DC-3 GHz, Cascadable
GaAs MMIC Amplifier
Product Features
Cascadable 50 Ohm Gain Block
19dB Gain, +18dBm P1dB
1.5:1 Input and Output VSWR
Operates From Single Supply
Low Cost Stripline Mount Ceramic Package
Hermetically Sealed
Applications
Narrow and Broadband Linear Amplifiers
Commercial and Industrial Applications
S y m b o l
P a r a m e t e r s : T e s t C o n d i t i o n s :
I d = 7 0 m A , Z
0
= 5 0 O h m s
U n i t s
M i n .
T y p .
M a x .
G
P
S m a l l S i g n a l P o w e r G a i n
f = 0 . 1 - 1 . 0 G H z
f = 1 . 0 - 2 . 0 G H z
f = 2 . 0 - 3 . 0 G H z
d B
d B
d B
1 8 . 0
1 6 . 0
1 5 . 0
2 0 . 0
1 8 . 0
1 7 . 0
G
F
G a i n F l a t n e s s
f = 0 . 1 - 2 . 0 G H z
d B
+ / - 1 . 0
B W 3 d B
3 d B B a n d w i d t h
G H z
3 . 0
P
1 d B
O u t p u t P o w e r a t 1 d B C o m p r e s s i o n
f = 2 . 0 G H z
d B m
1 8 . 0
N F
N o i s e F i g u r e
f = 2 . 0 G H z
d B
4 . 2
5 . 0
V S W R
I n p u t / O u t p u t
f = 0 . 1 - 8 . 0 G H z
1 . 5 : 1
I P
3
T h i r d O r d e r I n t e r c e p t P o i n t
f = 2 . 0 G H z
d B m
3 4 . 0
T
D
G r o u p D e l a y
f = 2 . 0 G H z
p s e c
1 2 0
I S O L
R e v e r s e I s o l a t i o n
f = 0 . 1 - 8 . 0 G H z
d B
2 2 . 0
V D
D e v i c e V o l t a g e
V
4 . 3
5 . 0
5 . 7
d G / d T
D e v i c e G a i n T e m p e r a t u r e C o e f f i c i e n t
d B / d e g C
- 0 . 0 0 2 7
d V / d T
D e v i c e V o l t a g e T e m p e r a t u r e C o e f f i c i e n t
m V / d e g C
- 5 . 0
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
Electrical Specifications at Ta = 25C
50 Ohm Gain Blocks
Output Power vs. Frequency
12
14
16
18
20
22
0.1
1
2
3
4
5
GHz
dB
5-73
Noise Figure vs. Frequency
3
4
5
6
0.1
1.0
2
3
4
5
|S11| vs. Frequency
|S21| vs. Frequency
|S12| vs. Frequency
|S22| vs. Frequency
TOIP vs. Frequency
Typical S-Parameters Vds = 5.0V, Ids = 70mA
SNA-576 DC-3 GHz Cascadable MMIC Amplifier
(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die)
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
-20
-15
-10
-5
0
0.1
1
2
3
4
5
12
14
16
18
20
22
0.1
1
2
3
4
5
-25
-20
-15
-10
-5
0
0.1
1
2
3
4
5
-20
-15
-10
-5
0
0.1
1
2
3
4
5
28
30
32
34
36
38
0.1
1
2
3
4
5
GHz
dB
Freq GHz
|S11|
S11 Ang
|S21|
S21 Ang
|S12|
S12 Ang
|S22|
S22 Ang
.100
0.219
156
10.104
-76
0.065
106
0.178
-124
.250
0.146
173
10.087
-44
0.078
147
0.110
-152
.500
0.179
110
8.744
134
0.079
-26
0.152
131
1.00
0.190
51
8.302
92
0.080
-49
0.180
85
1.50
0.183
-7
7.747
46
0.081
-76
0.212
33
2.00
0.153
-56
7.348
5
0.083
-100
0.230
-13
2.50
0.106
-106
6.651
-40
0.085
-128
0.233
-63
3.00
0.050
-153
5.943
-78
0.087
-154
0.219
-107
GHz
dB
dB
GHz
dBm
GHz
50 Ohm Gain Blocks
Typical Performance at 25
C (Vds = 5.0V, Ids = 70mA)
GHz
dB
GHz
dB
5-74
SNA-576 DC-3 GHz Cascadable MMIC Amplifier
Typical Performance at 25
C
Part Number
Devices Per Reel
Reel Size
SNA-576-TR1
1000
7"
SNA-576-TR2
3000
13"
SNA-576-TR3
5000
13"
Part Number Ordering Information
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
Device Voltage vs. Current - Id
4
4.5
5
5.5
6
65
70
75
80
85
90
95
Power Gain vs. Device Current
12
13
14
15
16
17
18
19
20
21
0
1
2
3
4
5
80mA
70mA
60mA
50mA
40mA
dB
Vdc
mA
GHz
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
Thermal Resistance (Lead-Junction): 315 C/W
Absolute Maximum Ratings
MTTF vs. Temperature @ Id = 70mA
P a r a m e te r
A b s o lu te
M a x im u m
D e vic e Cu rr en t
1 00 m A
P o w e r D is sip a tio n
5 60 m W
R F In pu t P ow e r
2 00 m W
Ju n ctio n Tem p era tu re
+2 0 0 C
O p e ratin g Te m p e ra tu re
-4 5 C to +8 5C
S to ra g e Te m p e ra ture
-6 5 C to +1 50 C
Lead Temperature
Junction
Temperature
MTTF (hrs)
+45C
+155C
1000000
+80C
+190C
100000
+110C
+220C
10000
Typical Biasing Configuration
50 Ohm Gain Blocks
Pin Designation
1
RF in
2
GND
3
RF out
and Bias
4
GND
5.0
6.0
Recommended Bias Resistor Values
Supply
Voltage(Vs)
5V
7.5V
9V
12V
15V
20V
Rbias (Ohms)
*
36
57
100
143
214
* Needs active biasing for constant current source
5-75
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