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Электронный компонент: SNA-676-TR2

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Product Description
Stanford Microdevices' SNA-676 is a high-performance
GaAs Heterojunction Bipolar Transistor (MMIC) housed in a
low-cost surface mountable stripline package. A Darlington
configuration is utilized for broadband performance to 6.5
GHz.
These unconditionally stable amplifiers provide 11dB of gain
and +18dBm of P1dB when biased at 5.7V and 70mA. This
MMIC requires only a single suply voltage. The use of an
external resistor allows for bias flexibility and stability.
Also available in chip form (SNA-600), its small size (0.4mm
x 0.4mm) and gold metallization make it an ideal choice for
use in hybrid circuits.
The SNA-676 is available in tape and reel at 1000, 3000 and
5000 devices per reel.
SNA-676
DC-6.5 GHz, Cascadable
GaAs MMIC Amplifier
Product Features
Cascadable 50 Ohm Gain Block
11dB Gain, +18dBm P1dB
High Linearity, +36dBm TOIP Typ.
1.5:1 Input and Output VSWR
Operates From a Single DC Supply
Low Cost Stripline Mount Ceramic Package
Applications
Narrow and Broadband Linear Amplifiers
Commercial and Industrial Applications
S y m b o l
P a r a m e t e r s : T e s t C o n d i t i o n s :
I d = 7 0 m A , Z
0
= 5 0 O h m s
U n i t s
M i n .
T y p .
M a x .
G
P
S m a l l S i g n a l G a i n
f = 0 . 1 - 4 . 0 G H z
f = 4 . 0 - 6 . 5 G H z
d B
d B
9 . 0
8 . 0
1 1 . 0
9 . 0
B W 3 d B
3 d B B a n d w i d t h
G H z
6 . 5
P
1 d B
O u t p u t P o w e r a t 1 d B C o m p r e s s i o n
f = 0 . 1 - 2 . 0 G H z
f = 2 . 0 - 6 . 5 G H z
d B m
1 8 . 0
1 6 . 0
N F
N o i s e F i g u r e
f = 0 . 1 - 4 . 0 G H z
f = 4 . 0 - 6 . 5 G H z
d B
7 . 5
8 . 5
V S W R
I n p u t / O u t p u t
f = 0 . 1 - 6 . 5 G H z
1 . 5 : 1
I P
3
T h i r d O r d e r I n t e r c e p t P o in t
f = 0 . 1 - 2 . 0 G H z
d B m
3 6 . 0
T
D
G r o u p D e l a y
f = 2 . 0 G H z
p s e c
1 2 0
I S O L
R e v e r s e I s o l a t i o n
f = 0 . 1 - 6 . 5 G H z
d B
1 7 . 0
V D
D e v i c e V o l t a g e
V
4 . 8
5 . 7
6 . 8
d G / d T
D e v i c e
G a i n
T e m p e r a t u r e C o e f f i c i e n t
d B / d e g C
- 0 . 0 0 2 3
d V / d T
D e v i c e V o l t a g e T e m p e r a t u r e C o e f f i c i e n t
m V / d e g C
- 5 . 0
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
Electrical Specifications at Ta = 25C
50 Ohm Gain Blocks
12
14
16
18
20
22
0.1
1
2
3
4
5
6
7
8
Output Power vs. Frequency
dBm
GHz
5-89
Noise Figure vs. Frequency
5
6
7
8
9
10
0.1
1
2
3
4
5
6
6.5
|S11| vs. Frequency
|S21| vs. Frequency
|S12| vs. Frequency
|S22| vs. Frequency
TOIP vs. Frequency
Typical S-Parameters Vds = 5.7V, Ids = 70mA
SNA-676 DC-6.5 GHz Cascadable MMIC Amplifier
(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die)
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
-30
-25
-20
-15
-10
-5
0.1
1
2
3
4
5
6
7
8
4
6
8
10
12
0.1
1
2
3
4
5
6
7
8
-25
-20
-15
-10
-5
0
0.1
1
2
3
4
5
6
7
8
-30
-25
-20
-15
-10
-5
0.1
1
2
3
4
5
6
7
8
28
30
32
34
36
38
0.1
1
2
3
4
5
6
7
8
F r e q G H z
| S 1 1 |
S 1 1 A n g
| S 2 1 |
S 2 1 A n g
| S 1 2 |
S 1 2 A n g
| S 2 2 |
S 2 2 A n g
. 1 0 0
0 . 1 5 2
- 1 4
3 . 6 2 4
1 5 2
0 . 0 9 5
- 4
0 . 1 9 8
- 4
. 2 5 0
0 . 1 4 6
- 2 5
3 . 6 0 2
1 4 5
0 . 1 3 9
- 1 0
0 . 2 0 5
- 2 6
. 5 0 0
0 . 1 3 1
- 4 2
3 . 5 4 9
1 4 0
0 . 1 4 9
- 3 0
0 . 2 4 7
- 5 6
1 . 0 0
0 . 1 1 0
- 8 3
3 . 5 8 3
1 0 2
0 . 1 4 8
- 5 9
0 . 2 2 2
- 1 1 2
1 . 5 0
0 . 0 8 5
- 1 3 0
3 . 5 6 7
5 9
0 . 1 4 6
- 9 0
0 . 1 9 8
- 1 7 9
2 . 0 0
0 . 0 7 2
1 7 8
3 . 5 4 1
2 1
0 . 1 4 5
- 1 2 0
0 . 1 9 3
1 2 0
2 . 5 0
0 . 0 7 7
1 0 9
3 . 5 1 2
- 2 2
0 . 1 4 1
- 1 5 2
0 . 2 0 3
5 4
3 . 0 0
0 . 1 0 7
5 2
3 . 4 2 7
- 6 4
0 . 1 3 6
1 8 0
0 . 2 2 2
1
3 . 5 0
0 . 1 4 3
0
3 . 4 0 1
- 1 0 6
0 . 1 3 2
1 4 7
0 . 2 4 8
- 6 0
4 . 0 0
0 . 1 6 8
- 4 4
3 . 2 9 0
- 1 4 4
0 . 1 2 8
1 1 8
0 . 2 7 0
- 1 1 7
4 . 5 0
0 . 1 7 3
- 9 0
3 . 2 8 0
1 7 5
0 . 1 2 4
8 8
0 . 2 8 8
1 7 7
5 . 0 0
0 . 1 4 1
- 1 4 2
3 . 1 0 4
1 2 8
0 . 1 2 4
6 0
0 . 2 8 5
1 1 7
5 . 5 0
0 . 0 7 9
1 6 9
2 . 9 2 9
8 7
0 . 1 2 3
2 9
0 . 2 7 6
5 1
6 . 0 0
0 . 0 3 8
6 2
2 . 6 5 8
4 7
0 . 1 2 1
0
0 . 2 5 9
- 1 0
6 . 5 0
0 . 0 7 9
- 5 7
2 . 3 5 9
1
0 . 1 1 9
- 3 5
0 . 3 2 2
- 7 6
50 Ohm Gain Blocks
Typical Performance at 25


C (Vds = 5.7V, Ids = 70mA)
dB
GHz
dB
GHz
dB
GHz
dB
GHz
dB
GHz
dB
GHz
5-90
SNA-676 DC-6.5 GHz Cascadable MMIC Amplifier
Typical Performance at 25


C
Part Number
Devices Per Reel
Reel Size
SNA-676-TR1
1000
7"
SNA-676-TR2
3000
13"
SNA-676-TR3
5000
13"
Part Number Ordering Information
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
Typical Biasing Configuration
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
Thermal Resistance (Lead-Junction): 250 C/W
Absolute Maximum Ratings
MTTF vs. Temperature @ Id = 70mA
P a r a m e te r
A b s o lu te
M a x im u m
D e vic e Cu rr en t
11 0m A
P o w e r D is sip a tio n
7 00 m W
R F In pu t P ow e r
2 00 m W
Ju n ctio n Tem p era tu re
+2 0 0 C
O p e ratin g Te m p e ra tu re
-4 5 C to +8 5C
S to ra g e Te m p e ra ture
-6 5 C to +1 50 C
Lead Temperature
Junction
Temperature
MTTF (hrs)
+55C
+155C
1000000
+90C
+190C
100000
+120C
+220C
10000
Device Voltage vs. Id
5
5.5
6
6.5
7
50
55
60
65
70
75
80
Vdc
mA
Power Gain vs. Device Current
20mA Steps
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
0.1
1.0
2.0
3.0
4.0
5.0
6.0
80mA
40mA
dB
GHz
50 Ohm Gain Blocks
Pin Designation
1
RF in
2
GND
3
RF out
and Bias
4
GND
R e c o m m e n d e d B ia s R e s is to r Va lu e s
Su p p ly
Vo lta g e (Vs )
5 V
7 .5 V
9 V
1 2 V
1 5 V
2 0 V
R b ia s (O h m s )
*
2 4
4 6
8 9
1 3 1
2 0 3
** Not Recommended
5-91