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Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
1
http://www.stanfordmicro.com
Phone: (800) SMI-MMIC
522 Almanor Ave., Sunnyvale, CA 94085
EDS-101422 Rev A
Preliminary
Preliminary
Product Description
Stanford Microdevices SSW-124 is a high perfomance
Gallium Arsenide Field Effect Transistor MMIC switch
housed in a low-cost surface-mountable 8-pin ceramic
package.
This single-pole, double-throw, non-reflective switch
consumes less than 50uA and operates at -5V and 0V for
control bias. Its high isolation and low insertion loss, makes
it ideal for T/R switching in analog and digital wireless
communication systems.
The die is fabricated using 0.5 micron FET process with
gold metallization and silicon nitride passivation to achieve
excellent performance and reliability.
Electrical Specifications at Ta = 25C
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Isolation vs. Frequency
V
Control
= -5 V
GHz
dB
-70
-60
-50
-40
-30
DC
1
2
3
4
5
6
SSW-124
DC-6 GHz High Isolation
SPDT GaAs MMIC Switch
Product Features
High Isolation: 42dB at 2GHz, 30dB at 6GHz
Low DC Power Consumption
Non-reflective (50 Ohm termination) when
Isolated
Broadband Performance - True DC Operation
Low Cost Surface-Mountable Ceramic Package
Applications
Analog/Digital Wireless System
Spread Spectrum
GPS
2
http://www.stanfordmicro.com
Phone: (800) SMI-MMIC
522 Almanor Ave., Sunnyvale, CA 94085
Preliminary
EDS-101422 Rev A
SSW-124 DC-6.0 GHz GaAs MMIC Switches
Preliminary
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2
Absolute Maximum Ratings
Operation of this device above any one of these
parameters may cause permanent damage.
1 .0
1 .2
1 .4
1 .6
1 .8
2 .0
D C
1
2
3
4
5
6
On Port Input/Output VSWR vs. Frequency
V
Control
= -5 V
GHz
dB
-2 .0
-1 .5
-1 .0
-0 .5
0 .0
D C
1
2
3
4
5
6
dB
GHz
Insertion Loss vs. Frequency
V
Control
= -5 V
3
http://www.stanfordmicro.com
Phone: (800) SMI-MMIC
522 Almanor Ave., Sunnyvale, CA 94085
Preliminary
EDS-101422 Rev A
SSW-124 DC-6.0 GHz GaAs MMIC Switches
Preliminary
Truth Table
1
V
2
V
2
J
-
1
J
3
J
-
1
J
0
5
-
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5
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0
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L
Caution ESD Sensitive:
Appropriate precautions in handling, packaging and
testing devices must be observed.
.290 [7.37]
.065 [1.65] (8X)
.160 [4.06]
.015 [.38]
.020 [.51] (8X)
.050 [1.27]
.010 [.25]
60
.200 [5.08]
.065 [1.65] REF
7 MAX. TYP
.008 [.20] (8X)
.096 [2.44]
.036 [.91]
.010 [.25] REF
.140 [3.56] REF
.010 [.25]
.010 [.25]
.140 [3.56]
.180 [4.57]
.030 [.76] TYP(8X)
.160 [4.06] REF
.200 [5.08] REF
DOT MARK
DENOTES
PIN 1
LOCATION
HEATSINK PLATE
45 MAX. TYP(8X)
SEATING PLANE TO BE .002 FROM
HEATSINK PLATE BOTTOM.
.035 [.89] TYP
(4X)
.020 [.51]
R.010 [.25] TYP
(4X)
HEATSINK PLATE
Package Dimensions
Pin Out
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2
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R
Switch Schematic
The part will be symbolized with a W1 designator
on the top surface of the package.
Part Symbolization
W1
50 Ohm (Typ.)
DIMENSIONS ARE IN INCHES [MM]
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7
Part Number Ordering Information
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