Product Description
1
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
522 Almanor Ave., Sunnyvale, CA 94085
EDS-101157 Rev D
0
5
10
15
20
25
30
35
40
45
1960 MHz
2140 MHz
2450 MHz
IP3
P1dB
Gain
Typical IP3, P1dB, Gain
SXT-289
1800-2500 MHz Power Amplifier
Product Features
Patented High Reliability GaAs HBT Technology
High Output 3rd Order Intercept : +42 dBm typ.
at 2450 MHz
Surface-Mountable Power Plastic Package
Applications
PCS Systems
WLL, Wideband CDMA Systems
ISM Systems
Stanford Microdevices' SXT-289 amplifier is a high efficiency
GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed
in low-cost surface-mountable plastic package. These HBT
MMICs are fabricated using molecular beam epitaxial growth
technology which produces reliable and consistent
performance from wafer to wafer and lot to lot.
These amplifiers are specially designed for use as driver
devices for infrastructure equipment in the 1800-2500 MHz
cellular, ISM, WLL and Wideband CDMA applications.
Its high linearity makes it an ideal choice for multi-carrier as
well as digital applications.
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Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
2
522 Almanor Ave., Sunnyvale, CA 94085
EDS-101157 Rev D
SXT-289 1800-2500 MHz Power Amplifier
37
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P1dB vs Frequency
MHz
dBm
1960 MHz Application Circuit Data, Icc=110mA, T=+25C, Rbias=27 ohm, Vs=8V
Note: Tuned for Output IP3
Input/Output Return Loss,
Isolation vs Frequency
MHz
dB
MHz
Gain vs. Frequency
dB
Third Order Intercept vs. Frequency
(P
OUT
per tone = 11dBm)
MHz
dBm
Third Order Intercept vs Tone Power
P
OUT
per tone (dBm)
dBm
Device Current vs. Source Voltage
V
S
(V)
Device Current (mA)
25C
-40C
85C
25C
-40C
85C
25C
-40C
85C
25C
-40C
85C
S11
S22
S12
25C
-40C
85C
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
3
522 Almanor Ave., Sunnyvale, CA 94085
EDS-101157 Rev D
SXT-289 1800-2500 MHz Power Amplifier
35
37
39
41
43
45
0
2
4
6
8
10
12
14
16
0
20
40
60
80
100
120
140
160
180
0.0
2.0
4.0
6.0
8.0
10.0
10
12
14
16
18
20
2110 2120
2130 2140 2150
2160 2170
-35
-30
-25
-20
-15
-10
-5
0
5
2110 2120
2130 2140 2150
2160 2170
35
37
39
41
43
45
2110 2120
2130 2140 2150
2160 2170
21
22
23
24
25
26
2110 2120
2130 2140 2150
2160 2170
P1dB vs Frequency
MHz
dBm
2140 MHz Application Circuit Data, Icc=110mA, T=+25C, Rbias=27 ohm, Vs=8V
Note: Tuned for Output IP3
Input/Output Return Loss,
Isolation vs Frequency
MHz
dB
MHz
Gain vs. Frequency
dB
Third Order Intercept vs. Frequency
(P
OUT
per tone = 11dBm)
MHz
dBm
Third Order Intercept vs Tone Power
P
OUT
per tone (dBm)
dBm
Device Current vs. Source Voltage
V
S
(V)
Device Current (mA)
25C
-40C
85C
25C
-40C
85C
25C
-40C
85C
25C
-40C
85C
S11
S22
S12
25C
-40C
85C
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
4
522 Almanor Ave., Sunnyvale, CA 94085
EDS-101157 Rev D
SXT-289 1800-2500 MHz Power Amplifier
36
38
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46
0
2
4
6
8
10
12
14
16
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20
40
60
80
100
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140
160
180
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2480
2500
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-20
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2400
2420
2440
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2480
2500
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2440
2460
2480
2500
P1dB vs Frequency
MHz
dBm
2450 MHz Application Circuit Data, Icc=110mA, T=+25C, Rbias=27 ohm, Vs=8V
Note: Tuned for Output IP3
Input/Output Return Loss,
Isolation vs Frequency
MHz
dB
MHz
Gain vs. Frequency
dB
Third Order Intercept vs. Frequency
(P
OUT
per tone = 11dBm)
MHz
dBm
Third Order Intercept vs Tone Power
P
OUT
per tone (dBm)
dBm
Device Current vs. Source Voltage
V
S
(V)
Device Current (mA)
25C
-40C
85C
25C
-40C
85C
25C
-40C
85C
25C
-40C
85C
S11
S22
S12
25C
-40C
85C
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
5
522 Almanor Ave., Sunnyvale, CA 94085
EDS-101157 Rev D
SXT-289 1800-2500 MHz Power Amplifier
1960 MHz Schematic
2.7 nH
Z=50
, 13.5
Z=50
, 8.8
0.5 pF
15 nH
18pF
1000pF
0.1
F
(SIZE A)
390
180
Z=50
, 19
39pF
1.0 pF
Rbias
15 nH
39pF
SXT-289
Vs
1960 MHz Application Circuit
Active Current Feedback Bias Circuit (for 5V supply)
1960 MHz Evaluation Board Layout
1960 MHz Schematic
1960 MHz Evaluation Board Layout
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Note: Circuit tuned for Output IP3
Voltage Feed Resistor Bias Circuit (for > 7V supply)
RFout
RFin
STANFORD MICRODEVICES
SOT-89 Eval Board
ECB-101499 Rev A
39pF
39pF
18pF
1000pF
0.1uF
Rbias
15nH
15nH
390 Ohms
180 Ohms
SXT-289
1.0pF
2.7nH
0.5pF
22pF
1000pF
0.1 uF
UMZ1N
39pF
39pF
15nH
1.0p
F
0.5p
F
4.3
1.8K
750
220
1
STANFORD MICRODEVICES
XAMP EVALUATION BOARD
ECB-101872 Rev A SOT-89
Z=50
, 13.5
0.5 pF
Z=50
, 35.5
39pF
(Rohm)
UMZ1N
5
6
4
3
2
1
Vs = 5V
1000 pF
22 pF
0.1
F
(SIZE A)
4.3
15 nH
1.0 pF
39pF
750
1.8K
220
SXT-289
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7
.
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m
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8
.
3
2
NOTE: Reference Application Note AN-026 for more
information on Active Current Feedback Bias Circuit.
ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE
*Note: IP3 performance degraded due to lower
(4.5V) device voltage.
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