PNP TRANSISTOR 8550
-1.5A
Power Dissipation: 1.0W
Collector Current: -1.5A
Collector-Base Voltage: -45V
TO-92
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSTa=25
PARAMETERS
SYMBOL MIN TYP MAX
UNIT
CONDITION
Collector-Emitter Breakdown Voltage BVceo
-25
V
Ic=-0.1mA
Collector-Base Breakdown Voltage BVcbo
-45
V
Ic=-100
u
A
Emitter-Base Breakdown Voltage
BVebo
-5
V
Ie=-100A
Collector-Base Leakage
Icbo
-0.1
uA Vcb=-40V
Collector-Emitter Leakage
Iceo
-0.1
uA
Vce=-20V
Emitter-Base Leakage
Iebo
-0.1
uA
Veb=-5V
Collector-Emitter Saturation Voltage Vce(sat)
-0.6
V
Ic=-1500mA, Ib=-50mA
Base-Emiiter Saturation Voltage
Vbe(sat)
-1.2
V Ic=-1500mA,
Ib=-50mA
DC Current Gain
Hfe1
Hfe2
85
50
300
Vce=-1V,Ic=-50mA
Vce=-1V,Ic=-500mA
Collector Current
Ic
-0.5
A
Peak Collector Current
Icp
-8
A(Pulse)
Current Gain Bandwidth
f
T
150
MHz
Vcb=-6V,
Ic=-20mA
Output Capacitance
Cob
32 pF
Vcb=-20V,Ie=0,f=1MHz
Power Dissipation
Pc
1.0 W
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55
150
Hfe1 Classification
Rank B
C
D
Range 85-160
120-200
160-300
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
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