NPN TRANSISTOR C945
100mA
AF OUTPUT AMPLIFIER
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSTa=25
PARAMETERS
SYMBOL MIN TYP MAX UNIT
CONDITION
Collector-Emitter Breakdown Voltage BVceo
50
V
Ic=1mA
Collector-Base Breakdown Voltage BVcbo
60
V
Ic=5
u
A
Emitter-Base Breakdown Voltage
BVebo
5
V
Ie=50A
Collector-Base Leakage
Icbo
0.1
uA Vcb=60V
Emitter-Base Leakage
Iebo
0.1
uA
Veb=5V
Collector-Emitter Saturation Voltage Vcesat
0.18
0.3 V
Ic=100mA, Ib=10mA
DC Current Gain
Hfe
90 200
600
Vce=6.0V,Ic=1.0mA
Collector Current
Ic
100
mA
Current Gain Bandwidth
f
T
100
180
MHz Vce=6V,
Ie=10mA
Output Capacitance
Cob
4.5 6.0 pF Vcb=10V,Ie=0,f=1MHz
Power Dissipation
Pc
0.25
W
Junction Temperature
Tj
125
Storage Temperature
Tstg
-55
125
Classification of Hfe
Rank R Q P K
Range 90-180 135-270
200-400
300-600
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
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