PNP TRANSISTOR D882
3.0A
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSTa=25
PARAMETERS
SYMBOL MIN TYP MAX
UNIT
CONDITION
Collector-Emitter Breakdown Voltage
BVceo
30
V
Ic=1mA
Collector-Base Breakdown Voltage
BVcbo
4 0
V
Ic=5uA
Emitter-Base Breakdown Voltage
BVebo
5
V
Ie=50A
Collector-Base Leakage
Icbo
0.1
uA
Vcb=10V
Emitter-Base Leakage
Iebo
0.1
uA
Veb=5V
Collector-Emitter Saturation Voltage Vcesat
0.5
V
Ic=2A, Ib=0.1A
DC Current Gain
Hfe1
80
390
Vce=2V,Ic=0.5A
Collector Current
Ic
3
A
Peak Collector Current
Icp
5
A(Pulse)
Current Gain Bandwidth
f
T
50
MHz
Vcb=5V, Ic=0.1A
Output Capacitance
Cob
50
pF
Vcb=10V,Ie=0,f=1MHz
Power Dissipation
Pc
1.25
W
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55
150
Classification of Hfe
Rank
R
O
Y
Range
80-160
100-200
170-390
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
AF OUTPUT AMPLIFIER
FOR DC-DC CONVERTER
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