P Channel Enhancement Mode MOSFET ST3413
-3.4A
DESCRIPTION
The ST3413 is the P-Channel logic enhancement mode power field effect transistors are
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other batter powered circuits where high-side
switching, and low in-line power loss are needed in a very small outline surface mount
package.
PIN CONFIGURATION
SOT-23-3L
1.Gate 2.Source 3.Drain
1A: Part Marking Y: Year Code A: Process Code
Page 1
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
FEATURE
-
20V/-3.4A, R
DS(ON)
= 95m-ohm
@VGS = -4.5V
-20V/-2.4A, R
DS(ON)
= 120m-ohm
@VGS = -2.5V
-
20V/-1.7A, R
DS(ON)
= 145m-ohm
@VGS = -1.8V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and
maximum DC current capability
SOT-23-3L package design
3
1
2
D
G S
3
1
2
13YA
P Channel Enhancement Mode MOSFET ST3413
-3.4A
ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )
Parameter Symbol
Typical
Unit
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
+/-12 V
Continuous Drain Current (TJ=150)
T
A
=25
T
A
=70
I
D
-2.8
-2.0
A
Pulsed Drain Current
I
DM
-8 A
Continuous Source Current (Diode Conduction)
I
S
-1.4 A
Power Dissipation
T
A
=25
T
A
=70
P
D
0.33
0.21
W
Operation Junction Temperature
T
J
150
Storgae Temperature Range
T
STG
-55/150
Thermal Resistance-Junction to Ambient
R
JA
105 /W
Page 2
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
P Channel Enhancement Mode MOSFET ST3413
-3.4A
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter Symbol
Condition
Min
Typ
Max Unit
Static
Drain-Source Breakdown Voltage V
(BR)DSS
V
GS
=0V,I
D
=-250uA
-20
V
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
,I
D
=-250uA -0.35 -0.8
V
Gate Leakage Current
I
GSS
V
DS
=0V,V
GS
=+/-12V 100 nA
V
DS
=-20V,V
GS
=0V -1
Zero Gate Voltage Drain Current
I
DSS
V
DS
=-20V,V
GS
=0V
T
J
=55
-5
uA
On-State Drain Current
I
D(on)
V
DS
-5V,V
GS
=-4.5V -6.0 A
Drain-source On-Resistance
R
DS(on)
V
GS
=-4.5V,I
D
=-2.8A
V
GS
=-2.5V,I
D
=-2.0A
V
GS
=-1.8V,I
D
=-1.5A
0.076
0.097
0.123
0.095
0.120
0.145
Forward Transconductance
g
fs
V
DS
=-5V,I
D
=-2.8V 6 S
Diode Forward Voltage
V
SD
I
S
=-1.6A,V
GS
=0V -0.8
-1.2
V
Dynamic
Total Gate Charge
Qg
4.8
8
Gate-Source Charge
Qgs
1.0
Gate-Drain Charge
Qgd
V
DS
=-6V,V
GS
=-4.5V
I
D
-2.8A
1.0
nC
Input Capacitance
Ciss
485
Output Capacitance
Coss
85
Reverse Transfer Capacitance
Crss
V
DS
=-6V,V
GS
=0V
F=1MHz
40
pF
10 25
Turn-On Time
t
d(on)
t
r
13 60
18 70
Turn-Off Time
t
d(off)
t
f
V
DD
=-6V,R
L
=6
I
D
=-1A,V
GEN
=-4.5V
R
G
=6
15 60
nS
Page 3
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
P Channel Enhancement Mode MOSFET ST3413
-3.4A
SOT-23-3L PACKAGE OUTLINE
Page 4
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
P Channel Enhancement Mode MOSFET ST3413
-3.4A
TYPICAL CHARACTERICTICS (25 Unless noted)
Psge 5
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
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