N Channel Enchancement Mode MOSFET ST6006S / ST6006
60V/60A
DESCRIPTION
The ST6006 is the N-Channel logic enhancement mode power field effect transistor are
produced using high cell density, DMOS trench technology.
This ST6006 is densigned to withstand high energy in the avalanche and commutation modes.
Designed for low voltage, high speed switching applications in power supplies, converters
and power motor controls, these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and offer additional safetv
margin against unexpected voltage transients.
PIN CONFIGURATION
TO-220-3L
ST6006
TO-263-2L
ST6006S
Page 1
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
APPLICATIONS
Power Supplies
Converters
Power Motor controls
Bridge Circuit
FEATURE
20V/2.8A, R
DS(ON)
= 85m-ohm
@VGS = 4.5V
20V/2.4A, R
DS(ON)
= 115m-ohm
@VGS = 2.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and
maximum
DC current capability
SOT-23-3L package design
N Channel Enchancement Mode MOSFET ST6006S / ST6006
60V/60A
ORDERING INFORMATION
Part Number
Package
Part Marking
ST6006T220TG
TO-220-3L
ST6006D
ST6006T220RG
TO-263-2L
ST6006
ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )
Parameter Symbol
Typical
Unit
Drain-Source Voltage
V
DSS
60 V
Gate-Source Voltage
V
GSS
+/-20 V
Continuous Drain Current (TJ=150)
T
A
=25
T
A
=70
I
D
60
39
A
Pulsed Drain Current
I
DM
120 A
Continuous Source Current (Diode Conduction)
I
S
60 A
Power Dissipation
T
A
=25
T
A
=70
P
D
120
3.7
W
Operation Junction Temperature
T
J
150
Storgae Temperature Range
T
STG
-55/150
Thermal Resistance-Junction to Ambient
R
JA
40
62.5
/W
Page2
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
N Channel Enchancement Mode MOSFET ST6006S / ST6006
60V/60A
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter Symbol
Condition
Min
Typ
Max Unit
Static
Drain-Source Breakdown Voltage V
(BR)DSS
V
GS
=0V,I
D
=10uA 60
V
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
,I
D
=50uA 1.0
3.0 V
Gate Leakage Current
I
GSS
V
DS
=0V,V
GS
=20V 100 nA
V
DS
=60V,V
GS
=0V 1
V
DS
=20V,V
GS
=0V
T
J
=125
Zero Gate Voltage Drain Current
I
DSS
V
DS
=60V,V
GS
=0V
T
J
=175
50
uA
On-State Drain Current
I
D(on)
V
DS
=5V,V
GS
=10V 60
A
V
GS
=10V,I
D
=30A 12
16
V
GS
=10V,I
D
=30A
T
J
=125
24
30
V
GS
=10V,I
D
=30A
T
J
=175
31 37
Drain-source On-Resistance
R
DS(on)
V
GS
=5V,I
D
=30A 14
19
m
Forward Transconductance
g
fs
V
DS
=15V,I
D
=30A 49 S
Diode Forward Voltage
V
SD
I
F
=60A,V
GS
=0V
1.6
V
Dynamic
Total Gate Charge
Qg
39
60
Gate-Source Charge
Qgs
12
Gate-Drain Charge
Qgd
V
DS
=30V,V
GS
=10V
I
D
60A
10
nC
Input Capacitance
Ciss
2000
Output Capacitance
Coss
400
Reverse Transfer Capacitance
Crss
V
DS
=25V,V
GS
=0V
F=1MHz
115
pF
12 25
Turn-On Time
t
d(on)
t
r
36 60
34 60
Turn-Off Time
t
d(off)
t
f
V
DD
=10V,R
L
=5.5
I
D
=3.6A,V
GEN
=4.5V
R
G
=6
10 25
nS
Page3
N Channel Enchancement Mode MOSFET ST6006S / ST6006
60V/60A
TO-220-3L PACKAGE OUTLINE
ST6006
Page4
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
N Channel Enchancement Mode MOSFET ST6006S / ST6006
60V/60
TO-263-2L PACKAGE OUTLINE
ST6006S
Page 5
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
PDF 
ZIP