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EMIF06-10006F1
March 2004 - Ed: 2
Flip-Chip package
I4
O4
I1
O1
I6
Gnd
Gnd
Gnd
O6
I3
O3
I5
O5
I2
O2
9
8
7
6
5
4
3
2
1
A
B
C
PIN CONFIGURATION (ball side)
6 LINES EMI FILTER
AND ESD PROTECTION
IPAD
TM
TM : IPAD is a trademark of STMicroelectronics.
IEC 61000-4-2 level 4:
15kV
(air discharge)
8 kV
(contact discharge)
MIL STD 883E - Method 3015-6 Class 3: 30kV
COMPLIES WITH THE FOLLOWING STANDARDS :
EMI symmetrical (I/O) low-pass filter
High efficiency in EMI filtering
Very low PCB space consuming:
2.92mm x 1.29mm
Very thin package: 0.65 mm
High efficiency in ESD suppression
(IEC61000-4-2 level 4)
High reliability offered by monolithic integration
High reducing of parasitic elements through
integration and wafer level packaging.
BENEFITS
Where EMI filtering in ESD sensitive equipment is
required:
Mobile phones
Computers and printers
Communication systems
MCU Boards
MAIN PRODUCT CHARACTERISTICS
The EMIF06-10006F1 is a highly integrated devices
designed to suppress EMI/RFI noise in all systems
subjected to electromagnetic interferences. The
EMIF06 flip-chip packaging means the package size
is equal to the die size.
This filter includes an ESD protection circuitry which
prevents the device from destruction when subjected
to ESD surges up 15kV. This device includes 6 EMIF
filters.
DESCRIPTION
Output 4
Input 1
30pF
30pF
100
Output 1
Input 4
30pF
30pF
100
Output 5
Input 5
30pF
30pF
100
Output 6
Input 6
30pF
30pF
100
Input 2
30pF
30pF
100
Output 2
Input 3
30pF
30pF
100
Output 3
BASIC CELL CONFIGURATION
EMIF06-10006F1
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Symbol
Parameter and test conditions
Value
Unit
P
R
DC power per resistance
0.1
W
P
T
Total DC power per package
0.6
W
T
j
Maximum junction temperature
125
C
T
op
Operating temperature range
-40 to + 85
C
T
stg
Storage temperature range
125
C
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
V
BR
Breakdown voltage
I
RM
Leakage current @ V
RM
V
RM
Stand-off voltage
V
CL
Clamping voltage
R
d
Dynamic impedance
I
PP
Peak pulse current
R
I/O
Series resistance between Input
and Output
C
line
Capacitance per line
ELECTRICAL CHARACTERISTICS (T
amb
= 25 C)
I
V
I
F
V
F
I
RM
I
R
I
PP
V
RM
V
BR
V
CL
Symbol
Test conditions
Min.
Typ.
Max.
Unit
V
BR
I
R
= 1 mA
5.5
7
9
V
I
RM
V
RM
= 3.3 V per line
500
nA
R
I/O
I = 10 mA
80
100
120
C
line
V
R
= 2.5 V, F = 1 MHz, 30 mV (on filter cells)
50
60
70
pF
EMIF06-10006F1
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100.0k
1.0M
10.0M
100.0M
1.0G
-50.00
-37.50
-25.00
-12.50
0.00
dB
f/Hz
Simulation
Measurement
100.0k
1.0M
10.0M
100.0M
1.0G
-50.00
-37.50
-25.00
-12.50
0.00
dB
f/Hz
Simulation
Measurement
Simulation
Measurement
Fig. 1: S21 (dB) attenuation measurements and
Aplac simulation.
Aplac 7.62 User: ST Microelectronics
100k
1M
10M
100M
1G
00
-25
-50
-75
-100
Aplac 7.62 User: ST Microelectronics
dB
dB
i3_o2.s2p
f/Hz
Fig. 2: Analog crosstalk measurements.
Fig. 3: Digital crosstalk measurements.
Fig. 4: ESD response to IEC61000-4-2 (+15kV air
discharge) on one input V(in) and one output V(out).
Fig. 5: ESD response to IEC61000-4-2 (-15kV air
discharge) on one input V(in) and one output V(out).
0
10
20
30
40
50
60
70
80
90
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V (V)
R
C(pF)
F=1MHz
V
osc
=30mV
RMS
T
j
=25C
Fig. 6: Line capacitance versus applied voltage for
filter.
EMIF06-10006F1
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Oi * = Output of each cell
Ii* = Input of each cell
Oi*
Cz=41pF@0V
Cz=41pF@0V
sub
Rs=100
Lbump
Rbump
Rsub
Cbump
Ii*
Rsub
Lbump
Rbump
Cbump
sub
Lbump
Rbump
sub
Rsub
Lgnd
Rgnd
Cgnd
Cgnd
Cgnd
EMIF06-10006F1 model
Ground return for each GND bump
Aplac model
aplacvar Rs
100
aplacvar Cz
41 pF
aplacvar Lbump
50 pH
aplacvar Rbump
20 m
aplacvar Cbump
1.2 pF
aplacvar Rsub
100 m
aplacvar Rgnd
100 m
aplacvar Lgnd
100 pH
aplacvar Cgnd
0.15 pF
Aplac parameters
EMIF06-10006F1
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EMIF yy
xxx zz F 1
-
EMI Filter
Number of lines
x: resistance value ( ) z: capacitance value / 10 (pF)
or
application (3 letters) and version (2 digits)
FLIP CHIP
Pitch = 500m
Bump = 315m
ORDER CODE
2.92mm 50m
1.29mm 50m
435m 50
315m 50
501m
50
500m 50
250m 50
650m 65
PACKAGE MECHANICAL DATA
545
545
400
100
230
x
y
x
w
x
w
Dot, ST logo
xxx = marking
yww = datecode
(y = year
ww = week)
All dimensions in m
MARKING
Copper pad Diameter :
250m recommended , 300m max
Solder stencil opening : 330m
Solder mask opening recommendation :
340m min for 300m copper pad diameter
FOOT PRINT RECOMMENDATIONS
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