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February, 25 2002
STB7102
0.5/2.5 GHz UHF LO BUFFER AMPLIFIER
SOT323-6L (SC70)
ORDER CODE
STB7102TR
BRANDING
102
3
2
1
4
5
6
(Bottom View)
4
5
6
3
2
1
(Top View)
PIN CONNECTION
Pin No.
Pin Name
1
INPUT
2
GND
3
GND
4
OUTPUT
5
GND
6
VCC
10
2
OPERATING FREQUENCY 500-2500MHz
LOW CURRENT CONSUMPTION
EXCELLENT ISOLATION
ULTRA MINIATURE SOT323-6L PACKAGE
APPLICATIONS
BUFFER AMPLIFIER FOR 0.5/2.5 GHz
APPLICATIONS
CDMA/PCS LO BUFFER AMPLIFIER
DESCRIPTION
The STB7102, designed for RF Mobile Phone
applications (0.5/2.5GHz), is an high isolation
Local Oscillator Buffer Amplifier. Manufactured in
the third generation of ST proprietary bipolar
process, it offers an excellent isolation and a good
linearity using only 4mA current consumption. The
STB7102 is housed in an ultra miniature package
SOT323-6L surface mount package.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions Value
Unit
V
cc
Supply voltage
3.3
V
T
stg
Storage temperature
-40 to +100
o
C
T
a
Operating ambient temperature
-30 to +85
o
C
STB7102
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ELECTRICAL CHARACTERISTICS (
CELL BAND
)
(T
a
= +25
o
C, V
cc
= 2.7V, Z
s
= Z
L
= 50
, tested in circuit shown in fig.1, unless otherwise specified)
Symbol
Parameters
Test Conditions
Min
Typ
Max
Unit
Freq.
Frequency Range
990
1030
MHz
Vcc
Supply Voltage
2.6
2.7
2.8
V
Icc
Current Consumption
3.3
4.3
5.3
mA
P1dB
Output Power at 1dB Compression Point
F = 1010 MHz
-2
dBm
Gp
Power Gain
F = 1010 MHz
16.7
dB
NF
Noise Figure
F = 1010 MHz
2.7
dB
Isol.
Reverse Isolation
F = 1010 MHz
45
dB
RLin
Input Return Loss
F = 1010 MHz
30
dB
RLout
Output Return Loss
F = 1010 MHz
17.8
dB
GND
3
GND
2
INPUT
1
VCC
6
GND
5
OUT
4
ULOBA
U1
C5
10nF
C3
33pF
C8
1.5pF
L1
33nH
C2
1uF
1
2
JP1
VCC
C1
33pF
L2
2n2
J1
RF IN
L3
10nH
J2
RF OUT
L4
5n6
Figure 1 Cell Band Application Circuit Configuration
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STB7102
TYPICAL PERFORMANCE (CELL BAND)
Power Gain
vs. Frequency and Voltage
0
2
4
6
8
10
12
14
16
18
20
800
900
1000
1100
1200
Frequency (MHz)
P
o
we
r
Ga
i
n
(
d
B
)
Vcc = 2.8 V
Vcc = 2.7 V
Vcc = 2.6 V
Ta = 25 C
Power Gain vs. Frequency and Temperature
0
2
4
6
8
10
12
14
16
18
20
800
900
1000
1100
1200
Frequency (MHz)
P
o
we
r
Ga
i
n
(
d
B
)
Ta = 25 C
Ta = -30 C
Ta = 85 C
Vcc = 2.7 V
Reverse Isolation vs. Frequency and Voltage
-60
-50
-40
-30
-20
-10
0
800
900
1000
1100
1200
Frequency (M Hz)
R
ever
se I
s
o
l
ati
o
n
(d
B
)
Vcc = 2.8 V
Vcc = 2.7 V
Vcc = 2.6 V
Ta = 25 C
Input Return Loss
vs. Frequency and Voltage
-35
-30
-25
-20
-15
-10
-5
0
800
900
1000
1100
1200
Fre quency (MHz)
I
nput R
e
tur
n
Los
s
(dB
)
Vcc = 2.8 V
Vcc = 2.7 V
Vcc = 2.6 V
Ta = 25 C
Reverse Isolation vs. Frequency and Temperature
-60
-50
-40
-30
-20
-10
0
800
900
1000
1100
1200
Frequency (M Hz)
R
e
ver
se Iso
l
atio
n
(d
B
)
Ta = 25 C
Ta = -30 C
Ta = 85 C
Vcc = 2.7 V
Input Return Loss
vs. Frequency and Temperature
-35
-30
-25
-20
-15
-10
-5
0
800
900
1000
1100
1200
Frequency (MHz)
I
nput R
e
tur
n
Los
s
(dB
)
Ta = 25 C
Ta = -30 C
Ta = 85 C
Vcc = 2.7 V
STB7102
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TYPICAL PERFORMANCE (CELL BAND)
Output Return Loss
vs. Frequency and Voltage
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
800
900
1000
1100
1200
Frequency (MHz)
O
u
tput R
e
tur
n
Los
s
(dB
)
Vcc = 2.8 V
Vcc = 2.7 V
Vcc = 2.6 V
Ta = 25 C
Output Return Loss vs. Frequency and Temperature
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
800
900
1000
1100
1200
Frequency (MHz)
O
u
tput R
e
tur
n
Los
s
(dB
)
Ta = 25 C
Ta = -30 C
Ta = 85 C
Vcc = 2.7 V
Noise Figure vs. Frequency
0
0.5
1
1.5
2
2.5
3
3.5
4
800
900
1000
1100
1200
Frequency (MHz)
N
o
is
e
Figur
e
(dB
)
Output Power @ 1dB
compression point
12
13
14
15
16
17
-13
-12
-11
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
Poutput (dBm )
G
a
in
(
d
B)
F = 1010 MHz
P1dB
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STB7102
GND
3
GND
2
INPUT
1
VCC
6
GND
5
OUT
4
ULOBA
U1
C5
10nF
C3
33pF
C8
22pF
L1
33nH
C2
1uF
1
2
JP1
VCC
C1
33pF
L2
6n8
J1
RF IN
L3
10nH
J2
RF OUT
Figure 2 PCS Band Application Circuit Configuration
ELECTRICAL CHARACTERISTICS (
PCS BAND
)
(T
a
= +25
o
C, V
cc
= 2.7V, Z
s
= Z
L
= 50
, tested in circuit shown in fig.2, unless otherwise specified)
Symbol
Parameters
Test Conditions
Min
Typ
Max
Unit
Freq.
Frequency Range
2040
2135
MHz
Vcc
Supply Voltage
2.6
2.7
2.8
V
Icc
Current Consumption
3.3
4.3
5.3
mA
P1dB
Output Power at 1dB Compression Point
F = 2085 MHz
-1
dBm
Gp
Power Gain
F = 2085 MHz
10
dB
NF
Noise Figure
F = 2085 MHz
5
dB
Isol.
Reverse Isolation
F = 2085 MHz
41
dB
RLin
Input Return Loss
F = 2085 MHz
17
dB
RLout
Output Return Loss
F = 2085 MHz
24
dB
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