VHF PORTABLE/MOBILE APPLICATIONS
RF & MICROWAVE TRANSISTORS
.280 4LSL (M123)
epoxy sealed
.
150 MHz
.
7.5 VOLTS
.
COMMON EMITTER
.
P
OUT
=
2.5 W MIN. WITH 11.0 dB GAIN
DESCRIPTION
The SD1135-03 is a 7.5 V Class C epitaxial silicon
NPN planar transistor designed primarily for VHF
communications. It withstands severe mismatch
under operating conditions.
PIN CONNECTION
BRANDING
1135-3
ORDER CODE
SD1135-03
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage
36
V
V
CER
Collector-Emitter Voltage
16
V
V
CES
Collector-Emitter Voltage
36
V
V
EBO
Emitter-Base Voltage
4.0
V
I
C
Device Current
1.7
A
P
DISS
Power Dissipation
15
W
T
J
Junction Temperature
+200
C
T
STG
Storage Temperature
-
65 to +150
C
R
TH(j-c)
Junction-Case Thermal Resistance
11.6
C/W
SD1135-03
1. Collector
3. Base
2. Emitter
4. Emitter
THERMAL DATA
October 1992
1/3
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0123
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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SD1135-03
3/3
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