AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.280 4LSL (M115)
epoxy sealed
DESCRIPTION
The SD1534-01 is a gold metallized silicon, NPN
power transistor designed for applications requiring
high peak power and low duty cycles such as
IFF, DME and TACAN. The SD1534-01 is pack-
aged in the .280" input matched stripline package
resulting in improved broadband performance and
a low thermal resistance.
PIN CONNECTION
BRANDING
1534-1
ORDER CODE
SD1534-01
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage
65
V
V
CES
Collector-Emitter Voltage
65
V
V
EBO
Emitter-Base Voltage
3.5
V
I
C
Device Current
5.5
A
P
DISS
Power Dissipation
218.7
W
T
J
Junction Temperature
+200
C
T
STG
Storage Temperature
-
65 to +150
C
R
TH(j-c)
Junction-Case Thermal Resistance
0.8
C/W
SD1534-01
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
November 1992
.
DESIGNED FOR HIGH POWER PULSED
IFF, DME, TACAN APPLICATIONS
.
80 WATTS (typ.) IFF 1030 - 1090 MHz
.
75 WATTS (min.) DME 1025 - 1150 MHz
.
50 WATTS (typ.) TACAN 960 - 1215 MHz
.
8.0 dB MIN. GAIN
.
REFRACTORY GOLD METALLIZATION
.
EMITTER BALLASTING AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
.
INFINITE LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
.
INPUT MATCHED, COMMON BASE
CONFIGURATION
1/3
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
P
OUT
f
=
1025 -- 1150MHz P
IN
=
13.0W
V
CE
=
50 V
75
--
--
W
G
P
f
=
1025 -- 1150MHz P
IN
=
13.0W
V
CE
=
50 V
7.6
--
--
dB
Note:
Pulse Width
=
10
Sec, Duty Cycle
=
1%
This device is suitable for use under other pulse width/duty cycle conditions.
Please contact the factory for specific applications assistance.
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
10mA
I
E
=
0mA
65
--
--
V
BV
CES
I
C
=
25mA
V
BE
=
0V
65
--
--
V
BV
EBO
I
E
=
10mA
I
C
=
0mA
3.5
--
--
V
I
CES
V
CE
=
50V
I
E
=
0mA
--
--
5
mA
h
FE
V
CE
=
5V
I
C
=
100mA
10
--
--
--
DYNAMIC
SD1534-01
2/3
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0115
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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SD1534-01
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