AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
. 400 x .400 2LFL (M138)
hermetically sealed
.
DESIGNED FOR HIGH POWER PULSE
IFF, DME, AND TACAN APPLICATIONS
.
200 W (typ.) IFF 1030 - 1090 MHz
.
150 W (min.) DME 1025 - 1150 MHz
.
140 W (typ.) TACAN 960 - 1215 MHz
.
7.8 dB MIN. GAIN
.
REFRACTORY GOLD METALLIZATION
.
BALLASTING AND LOW THERMAL
RESISTANCE FOR RELIABILITY AND
RUGGEDNESS
.
30:1 LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
.
INPUT AND OUTPUT MATCHED,
COMMON BASE CONFIGURATION
DESCRIPTION
The SD1538-08 is a gold metallized, silicon NPN
power transistor. The SD1538-08 is designed for
applications requiring high peak power and low
duty cycles such as IFF, DME and TACAN. The
SD1538-08 is packaged in a metal/ceramic pack-
age with internal input/output matching, resulting
in improved broadband performance and low ther-
mal resistance.
PIN CONNECTION
BRANDING
1538-8
ORDER CODE
SD1538-08
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
V
CBO
Collector-Base Voltage
65
V
V
CES
Collector-Emitter Voltage
65
V
V
EBO
Emitter-Base Voltage
3.5
V
I
C
Device Current
11
A
P
DISS
Power Dissipation
583
W
T
J
Junction Temperature
+200
C
T
STG
Storage Temperature
-
65 to +150
C
R
TH(j-c)
Junction-Case Thermal Resistance
0.30
C/W
SD1538-08
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
September 6, 1994
1/5
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditi ons
Value
Uni t
Min.
Typ.
Max.
P
OUT
f
=
1025
-
1150 MHz P
IN
=
25 W
V
CE
=
50 V
150
--
--
W
P
G
f
=
1025
-
1150 MHz P
IN
=
25 W
V
CE
=
50 V
7.8
--
--
dB
N ote:
Pulse W idth
=
10
Sec, D uty Cyle
=
1%
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
10mA
I
E
=
0mA
65
--
--
V
BV
CES
I
C
=
25mA
V
BE
=
0V
65
--
--
V
BV
EBO
I
E
=
5mA
I
C
=
0mA
3.5
--
--
V
I
CES
V
CE
=
50V
I
E
=
0mA
--
--
10
mA
h
FE
V
CE
=
5V
I
C
=
300mA
5
--
--
--
DYNAMIC
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
POWER OUTPUT vs FREQUENCY
SD1538-08
2/5
EFFICIENCY vs POWER INPUT
TYPICAL PERFORMANCE (cont'd)
EFFICIENCY vs FREQUENCY
IMPEDANCE DATA
TYPICAL INPUT IMPEDANCE
TYPICAL COLLECTOR LOAD IMPEDANCE
SD1538-08
3/5
TEST CIRCUIT
C1, C2 : .6 - 4.5pF Gigatrim
C3
: .100 x .100 120pF Chip Capacitor
C4
: .100 x .100 470pF Chip Capacitor
C5
: 100
F Electrolytic
L1
: #20 AWG
L2
: 3 Turns, #20 AWG Wound on #32 Drill Bit
Board Material: Telfon Er
=
2.5, Thickness
=
.031"
SD1538-08
4/5
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0138 rev. D
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectron-
ics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
SD1538-08
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