1.6 GHz SATCOM APPLICATIONS
RF & MICROWAVE TRANSISTORS
. 250 x .320 2LFL (M170)
epoxy sealed
.
1.65 GHz
.
28 VOLTS
.
EFFICIENCY 50% MIN.
.
CLASS C OPERATION
.
COMMON BASE
.
INPUT/OUTPUT MATCHING
.
P
OUT
=
24 W MIN. WITH 9.0 dB GAIN
DESCRIPTION
The SD1888-03 is a 28 V Class C silicon NPN
transistor designed for INMARSAT and other 1.65
GHz SATCOM applications. A gold metallized emit-
ter-ballasted die geometry is employed providing
high gain and efficiency while ensuring long term
reliability and ruggedness under severe operating
conditions. SD1888-03 is packaged in a cost-ef-
fective epoxy sealed housing
PIN CONNECTION
BRANDING
1888-3
ORDER CODE
SD1888-03
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
V
CBO
Collector-Base Voltage
45
V
V
CEO
Collector-Emitter Voltage
12
V
V
EBO
Emitter-Base Voltage
3.0
V
I
C
Device Current
2.6
A
P
DISS
Power Dissipation
50
W
T
J
Junction Temperature
+200
C
T
STG
Storage Temperature
-
65 to +150
C
R
TH(j-c)
Junction-Case Thermal Resistance
3.5
C/W
SD1888-03
1. Collector
3. Base
2. Emitter
THERMAL DATA
July 1993
1/4
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditi ons
Value
Uni t
Min.
Typ.
Max.
P
OUT
f
=
1.65 GHz
P
IN
=
3.0 W
V
CE
=
28 V
24
--
--
W
G
P
f
=
1.65 GHz
P
IN
=
3.0 W
V
CE
=
28 V
9.0
--
--
dB
c
f
=
1.65 GHz
P
IN
=
3.0 W
V
CE
=
28 V
50
--
--
%
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
6 mA
I
E
=
0 mA
45
--
--
V
BV
CEO
I
C
=
6 mA
I
B
=
0 mA
12
--
--
V
BV
EBO
I
E
=
6 mA
I
C
=
0 mA
3.0
--
--
V
h
FE
V
CE
=
5 V
I
C
=
1.2 A
15
--
150
--
DYNAMIC
TYPICAL PERFORMANCE
POWER OUTPUT & EFFICIENCY vs
POWER INPUT
SD1888-03
2/4
TYPICAL INPUT
IMPEDANCE
TYPICAL COLLECTOR
LOAD IMPEDANCE
IMPEDANCE DATA
Z
IN
Z
CL
FREQ.
Z
IN
(
)
Z
CL
(
)
1600 MHz
9.0 + j 14.0
11.0 + j 2.0
1650 MHz
11.5 + j 12.0
9.0 + j 4.0
1700 MHz
23.0 + j 8.0
8.0 + j 5.5
C1
: 1500pF Feedtrhu Capacitor Erie
C2, C3 : 0.4 - 2.5pF Trim Capacitor Johanson Gigatrim
C4
: 100pF ATC Chip Capacitor
L1, L2 : RF Chokes; 3 Turns #22 Wire .100" Diameter
TEST CIRCUIT
SD1888-03
3/4
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0170
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SD1888-03
4/4
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