1.6 GHz SATCOM APPLICATIONS
RF & MICROWAVE TRANSISTORS
.230 2LFL (M151)
hermetically sealed
.
1.65 GHz
.
28 VOLTS
.
GOLD METALLIZED SYSTEM
.
POLYSILICON SITE BALLASTING
.
OVERLAY DIE GEOMETRY
.
HIGH RELIABILITY AND RUGGEDNESS
.
P
OUT
=
5.0 W MIN. WITH 14.0 dB GAIN
DESCRIPTION
The SD1891-03 is a 28 V silicon NPN transistor
designed for INMARSAT and other 1.6 GHz SAT-
COM applications. This device utilizes polysilicon
site ballasting with a gold metallized die to achieve
high reliability and ruggedness.
PIN CONNECTION
BRANDING
1891-03
ORDER CODE
SD1891-03
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
V
CBO
Collector-Base Voltage
45
V
V
CEO
Collector-Emitter Voltage
15
V
V
EBO
Emitter-Base Voltage
3.5
V
I
C
Device Current
1.1
A
P
DISS
Power Dissipation
8.8
W
T
J
Junction Temperature
+200
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j-c)
Junction-Case Thermal Resistance
20.0
C/W
SD1891-03
1. Collector
3. Base
2. Emitter
THERMAL DATA
March 1993
1/5
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditi ons
Value
Uni t
Min.
Typ.
Max.
P
OUT
f
=
1.65 GHz
P
IN
=
200 mW
V
CE
=
28 V
5.0
--
--
W
G
P
f
=
1.65 GHz
P
IN
=
200 mW
V
CE
=
28 V
14
--
--
dB
c
f
=
1.65 GHz
P
IN
=
200 mW
V
CE
=
28 V
45
--
--
%
C
OB
f
=
1 MHz
V
CB
=
28 V
--
2.5
--
pF
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
1mA
I
E
=
0mA
45
--
--
V
BV
EBO
I
E
=
1mA
I
C
=
0mA
3.5
--
--
V
I
CBO
V
CB
=
24V
I
E
=
0mA
--
--
0.5
mA
h
FE
V
CE
=
5V
I
C
=
100mA
15
--
150
--
DYNAMIC
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
SD1891-03
2/5
Z
CL
Z
IN
1.5 GHz
1.5 GHz
1.7 GHz
1.7 GHz
IMPEDANCE DATA
FREQ.
Z
IN
(
)
Z
CL
(
)
1.5 GHz
6.5 + j 8.5
8.5 + j 18.5
1.6 GHz
6.0 + j 9.5
6.5 + j 18.0
1.7 GHz
6.5 + j 11.5
5.5 + j 15.0
SD1891-03
3/5
TEST CIRCUIT
C1, C2 : .4 - 2.5pF Johandson Capacitor #27283
C3
: 100pF ATC Chip Capacitor ATC100 A101KCA 150
C4
: 15,000pF EMI Filter Murata/Erie 9900-381-6004
L1, L2 : 4 Turns, Choke #28 AWG .080" I.D.
S1
: Epsilam 10 Er
=
10.2, Height .050" 1 Oz. Cu. SMA Launcher CD1
(2 pieces) .230" Fixture Housing Heatsink
SD1891-03
4/5
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0151
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SD1891-03
5/5
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