1/5
1N582x
July 2003 - Ed: 3A
LOW DROP POWER SCHOTTKY RECTIFIER
Axial Power Schottky rectifier suited for Switch
Mode Power Supplies and high frequency DC to
DC converters. Packaged in DO-201AD these
devices are intended for use in low voltage, high
frequency
inverters,
free
wheeling,
polarity
protection and small battery chargers.
DESCRIPTION
n
VERY SMALL CONDUCTION LOSSES
n
NEGLIGIBLE SWITCHING LOSSES
n
EXTREMELY FAST SWITCHING
n
LOW FORWARD VOLTAGE DROP
n
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
1N5820 1N5821 1N5822
V
RRM
Repetitive peak reverse voltage
20
30
40
V
I
F(RMS)
RMS forward current
10
A
I
F(AV)
Average forward current
T
L
= 100
C
= 0.5
3
A
T
L
= 110
C
= 0.5
3
3
A
I
FSM
Surge non repetitive forward
current
tp = 10 ms
Sinusoidal
80
A
P
ARM
Repetitive peak avalanche
power
tp = 1s
Tj = 25C
1700
W
T
stg
Storage temperature range
- 65 to + 150
C
Tj
Maximum operating junction temperature *
150
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values)
I
F(AV)
3 A
V
RRM
40 V
T
j
150C
V
F
(max)
0.475 V
MAIN PRODUCTS CHARACTERISTICS
DO-201AD
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
1N582x
2/5
Symbol
Parameter
Tests Conditions
1N5820 1N5821 1N5822
Unit
I
R
*
Reverse leakage
current
Tj = 25
C
V
R
= V
RRM
2
2
2
mA
Tj = 100
C
20
20
20
mA
V
F
*
Forward voltage drop
Tj = 25
C
I
F
= 3 A
0.475
0.5
0.525
V
Tj = 25
C
I
F
= 9.4 A
0.85
0.9
0.95
V
Pulse test : * tp = 380 s,
< 2%
To evaluate the conduction losses use the following equations :
P = 0.33 x I
F(AV)
+ 0.035 I
F
2
(RMS )
for 1N5820 / 1N5821
P = 0.33 x I
F(AV)
+ 0.060 I
F
2
(RMS )
for 1N5822
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
th (j-a)
Junction to ambient
Lead length = 10 mm
80
C/W
R
th (j-l)
Junction to lead
Lead length = 10 mm
25
C/W
THERMAL RESISTANCES
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
PF(av)(W)
IF(av) (A)
T
=tp/T
tp
= 0.2
= 0.5
= 1
= 0.05
= 0.1
Fig. 1: Average forward power dissipation versus
average forward current (1N5820/1N5821).
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
PF(av)(W)
IF(av) (A)
T
=tp/T
tp
= 0.2
= 0.5
= 1
= 0.05
= 0.1
Fig. 2: Average forward power dissipation versus
average forward current (1N5822).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
1N582x
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0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IF(av)(A)
Tamb(C)
T
=tp/T
tp
Rth(j-a)=80C/W
Rth(j-a)=Rth(j-l)=25C/W
Fig. 5-1: Average forward current versus ambient
temperature (
=0.5) (1N5820/1N5821).
1E-3
1E-2
1E-1
1E+0
0
2
4
6
8
10
12
14
16
IM(A)
t(s)
Ta=100C
Ta=75C
Ta=25C
I
M
t
=0.5
Fig. 6-1:
Non repetitive surge peak forward
current
versus
overload
duration
(maximum
values) (1N5820/1N5821).
1E-1
1E+0
1E+1
1E+2
1E+3
0.0
0.2
0.4
0.6
0.8
1.0
Zth(j-a)/Rth(j-a)
T
=tp/T
tp
tp(s)
= 0.1
= 0.2
= 0.5
Single pulse
Fig. 7: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
printed circuit board, e(Cu)=35mm, recommended
pad layout).
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IF(av)(A)
Tamb(C)
T
=tp/T
tp
Rth(j-a)=80C/W
Rth(j-a)=Rth(j-l)=25C/W
Fig. 5-2: Average forward current versus ambient
temperature (
=0.5) (1N5822).
1E-3
1E-2
1E-1
1E+0
0
1
2
3
4
5
6
7
8
9
10
11
12
IM(A)
t(s)
Ta=100C
Ta=75C
Ta=25C
I
M
t
=0.5
Fig. 6-2:
Non repetitive surge peak forward
current
versus
overload
duration
(maximum
values) (1N5822).
1
2
5
10
20
40
10
100
600
C(pF)
VR(V)
1N5822
1N5820
1N5821
F=1MHz
Tj=25C
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
1N582x
4/5
0
5
10
15
20
25
30
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
IR(mA)
VR(V)
Tj=100C
Tj=25C
1N5820
1N5821
Tj=125C
Fig. 9-1: Reverse leakage current versus reverse
voltage applied (typical values) (1N5820/1N5821).
0
5
10
15
20
25
30
35
40
1E-3
1E-2
1E-1
1E+0
1E+1
5E+1
IR(mA)
VR(V)
Tj=100C
Tj=25C
Tj=125C
Fig. 9-2: Reverse leakage current versus reverse
voltage applied (typical values) (1N5822).
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0.01
0.10
1.00
10.00
50.00
IFM(A)
VFM(V)
Tj=25C
Tj=100C
Tj=125C
Fig. 10-1: Forward voltage drop versus forward
current (typical values) (1N5820/1N5821).
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0.10
1.00
10.00
50.00
IFM(A)
VFM(V)
Tj=25C
Tj=100C
Tj=125C
Fig. 10-2: Forward voltage drop versus forward
current (typical values) (1N5822).
1
10
100
1000
0
20
40
60
80
100
IFSM(A)
Number of cycles
F=50Hz
Tj initial=25C
Fig. 11: Non repetitive surge peak forward current
versus number of cycles.
1N582x
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
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Ordering type
Marking
Package
Weight
Base qty
Delivery mode
1N582x
Part number
cathode ring
DO-201AD
1.12g
600
Ammopack
1N582xRL
Part number
cathode ring
DO-201AD
1.12g
1900
Tape & reel
n
EPOXY MEETS UL94,V0
PACKAGE MECHANICAL DATA
DO-201AD plastic
B
A
E
E
D
D
C
B
note 2
note 1
note 1
REF.
DIMENSIONS
NOTES
Millimeters
Inches
Min.
Max.
Min.
Max.
A
9.50
0.374
1 - The lead diameter
D is not controlled over zone E
2 - The minimum axial length within which the device may be
placed with its leads bent at right angles is 0.59"(15 mm)
B
25.40
1.000
C
5.30
0.209
D
1.30
0.051
E
1.25
0.049
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