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Электронный компонент: 1N5822

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1N582x
July 1999 - Ed: 2A
LOW DROP POWER SCHOTTKY RECTIFIER
Axial Power Schottky rectifier suited for Switch
Mode Power Supplies and high frequency DC to
DC converters. Packaged in DO-201AD these
devices are intended for use in low voltage, high
frequency inverters, free wheeling, polarity
protection and small battery chargers.
DESCRIPTION
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW FORWARD VOLTAGE DROP
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
1N5820 1N5821 1N5822
V
RRM
Repetitive peak reverse voltage
20
30
40
V
I
F(RMS)
RMS forward current
10
A
I
F(AV)
Average forward current
T
L
= 100
C
= 0.5
3
A
T
L
= 110
C
= 0.5
3
3
A
I
FSM
Surge non repetitive forward current
tp = 10 ms
Sinusoidal
80
A
T
stg
Storage temperature range
- 65 to + 150
C
Tj
Maximum operating junction temperature *
150
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/
s
ABSOLUTE RATINGS (limiting values)
I
F(AV)
3 A
V
RRM
40 V
T
j
150C
V
F
(max)
0.475 V
MAIN PRODUCTS CHARACTERISTICS
DO-201AD
* :
dPtot
dTj
<
1
Rth
(
j
-
a
)
thermal runaway condition for a diode on its own heatsink
1/5
Symbol
Parameter
Tests Conditions
1N5820 1N5821 1N5822
Unit
I
R
*
Reverse leakage
current
Tj = 25
C
V
R
= V
RRM
2
2
2
mA
Tj = 100
C
20
20
20
mA
V
F
*
Forward voltage drop
Tj = 25
C
I
F
= 3 A
0.475
0.5
0.525
V
Tj = 25
C
I
F
= 9.4 A
0.85
0.9
0.95
V
Pulse test : * tp = 380
s,
< 2%
To evaluate the conduction losses use the following equations :
P = 0.33 x I
F(AV)
+ 0.035 I
F
2
(RMS )
for 1N5820 / 1N5821
P = 0.33 x I
F(AV)
+ 0.060 I
F
2
(RMS )
for 1N5822
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
th (j-a)
Junction to ambient
Lead length = 10 mm
80
C/W
R
th (j-l)
Junction to lead
Lead length = 10 mm
25
C/W
THERMAL RESISTANCES
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
PF(av)(W)
IF(av) (A)
T
=tp/T
tp
= 0.2
= 0.5
= 1
= 0.05
= 0.1
Fig. 1: Average forward power dissipation versus
average forward current (1N5820/1N5821).
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
PF(av)(W)
IF(av) (A)
T
=tp/T
tp
= 0.2
= 0.5
= 1
= 0.05
= 0.1
Fig. 2: Average forward power dissipation versus
average forward current (1N5822).
1N582x
2/5
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IF(av)(A)
Tamb(C)
T
=tp/T
tp
Rth(j-a)=80C/W
Rth(j-a)=Rth(j-l)=25C/W
Fig. 2-1: Average forward current versus ambient
temperature (
=0.5) (1N5820/1N5821).
1E-3
1E-2
1E-1
1E+0
0
2
4
6
8
10
12
14
16
IM(A)
t(s)
Ta=100C
Ta=75C
Ta=25C
I
M
t
=0.5
Fig. 3-1: Non repetitive surge peak forward
current versus overload duration (maximum
values) (1N5820/1N5821).
1E-1
1E+0
1E+1
1E+2
1E+3
0.0
0.2
0.4
0.6
0.8
1.0
Zth(j-a)/Rth(j-a)
T
=tp/T
tp
tp(s)
= 0.1
= 0.2
= 0.5
Single pulse
Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
printed circuit board, e(Cu)=35mm, recommended
pad layout).
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IF(av)(A)
Tamb(C)
T
=tp/T
tp
Rth(j-a)=80C/W
Rth(j-a)=Rth(j-l)=25C/W
Fig. 2-2: Average forward current versus ambient
temperature (
=0.5) (1N5822).
1E-3
1E-2
1E-1
1E+0
0
1
2
3
4
5
6
7
8
9
10
11
12
IM(A)
t(s)
Ta=100C
Ta=75C
Ta=25C
I
M
t
=0.5
Fig. 3-2: Non repetitive surge peak forward
current versus overload duration (maximum
values) (1N5822).
1
2
5
10
20
40
10
100
600
C(pF)
VR(V)
1N5822
1N5820
1N5821
F=1MHz
Tj=25C
Fig. 5: Junction capacitance versus reverse
voltage applied (typical values).
1N582x
3/5
0
5
10
15
20
25
30
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
IR(mA)
VR(V)
Tj=100C
Tj=25C
1N5820
1N5821
Tj=125C
Fig. 6-1: Reverse leakage current versus reverse
voltage applied (typical values) (1N5820/1N5821).
0
5
10
15
20
25
30
35
40
1E-3
1E-2
1E-1
1E+0
1E+1
5E+1
IR(mA)
VR(V)
Tj=100C
Tj=25C
Tj=125C
Fig. 6-2: Reverse leakage current versus reverse
voltage applied (typical values) (1N5822).
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0.01
0.10
1.00
10.00
50.00
IFM(A)
VFM(V)
Tj=25C
Tj=100C
Tj=125C
Fig. 7-1: Forward voltage drop versus forward
current (typical values) (1N5820/1N5821).
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0.10
1.00
10.00
50.00
IFM(A)
VFM(V)
Tj=25C
Tj=100C
Tj=125C
Fig. 7-2: Forward voltage drop versus forward
current (typical values) (1N5822).
1
10
100
1000
0
20
40
60
80
100
IFSM(A)
Number of cycles
F=50Hz
Tj initial=25C
Fig. 8: Non repetitive surge peak forward current
versus number of cycles.
1N582x
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics - Printed in Italy - All rights reserved.
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Ordering type
Marking
Package
Weight
Base qty
Delivery mode
1N582x
Part number
cathode ring
DO-201AD
1.12g
600
Ammopack
1N582xRL
Part number
cathode ring
DO-201AD
1.12g
1900
Tape & reel
Epoxy meets UL94,V0
PACKAGE MECHANICAL DATA
DO-201AD plastic
B
A
E
E
D
D
C
B
note 2
note 1
note 1
REF.
DIMENSIONS
NOTES
Millimeters
Inches
Min.
Max.
Min.
Max.
A
9.50
0.374
1 - The lead diameter
D is not controlled over zone E
2 - The minimum axial length within which the device may be
placed with its leads bent at right angles is 0.59"(15 mm)
B
25.40
1.000
C
5.30
0.209
D
1.30
0.051
E
1.25
0.049
1N582x
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