2N2369A
November 1988
HIGH-SPEED SATURATED SWITCH
The 2N2369A is a silicon planar epitaxial NPN tran-
sistor in Jedec TO-18 metal case. It is designed spe-
cifically for high-speed saturated switching applica-
tions at current levels from 100
A to 100 mA.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Unit
V
CB O
Collector-base Voltage (I
E
= 0)
40
V
V
CE S
Collector-emitter Voltage (V
BE
= 0)
40
V
V
CE O
Collector-emitter Voltage (I
B
= 0)
15
V
V
EB O
Emitter-base Voltage (I
C
= 0)
4.5
V
I
C
Collector Current
0.2
A
I
CM
Collector Current (10
s pulse)
0.5
A
P
t o t
Total Power Dissipation at T
amb
25
C
at T
c ase
25
C
at T
c ase
100
C
0.36
1.2
0.68
W
W
W
T
s t g
, T
j
Storage and Junction Temperature
65 to 200
C
TO-18
DESCRIPTION
INTERNAL SCHEMATIC DIAGRAM
1/6
ELECTRICAL CHARACTERISTICS (T
amb
= 25
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cutoff
Current (I
E
= 0)
V
CB
= 20 V
T
amb
= 150
C
30
A
I
CES
Collector Cutoff
Current (V
B E
= 0)
V
CE
= 20 V
0.4
A
V
(BR) CBO
Collector-base
Breakdown Voltage
(I
E
= 0)
I
C
= 10
A
40
V
V
(BR)CES
Collector-emitter
Breakdown Voltage
(V
BE
= 0)
I
C
= 10
A
40
V
V
(B R)CEO
*
Collector-emitter
Breakdown Voltage
(I
B
= 0)
I
C
= 10 mA
15
V
V
(BR) EBO
Emitter-base
Breakdown Voltage
(I
C
= 0)
I
E
= 10
A
4.5
V
V
CE (s at )
*
Collector-emitter
Saturation Voltage
I
C
= 10 mA
I
C
= 30 mA
I
C
= 100 mA
I
C
= 10 mA
T
am b
= 125
C
I
B
= 1 mA
I
B
= 3 mA
I
B
= 10 mA
I
B
= 1 mA
0.14
0.17
0.28
0.19
0.2
0.25
0.5
0.3
V
V
V
V
V
BE (s at )
*
Base-emitter
Saturation Voltage
I
C
= 10 mA
I
B
= 30 mA
I
C
= 100 mA
I
C
= 10 mA
T
am b
= 55
I
B
= 1 mA
I
B
= 3 mA
I
B
= 10 mA
I
B
= 1 mA
to 125
C
0.7
0.59
0.8
0.9
1.1
0.85
1.15
1.6
1.02
V
V
V
V
h
F E
*
DC Current Gain
I
C
= 10 mA
I
C
= 10 mA
I
C
= 30 mA
I
C
= 100 mA
V
CE
= 0.35 V
V
CE
= 1 V
V
CE
= 0.4 V
V
CE
= 1 V
40
40
30
20
63
66
71
120
120
h
F E
*
DC Current Gain
I
C
= 10 mA
T
am b
= 55
C
V
CE
= 0.35 V
20
50
f
T
Transition Frequency
I
C
= 10 mA
f = 100 MHz
V
CE
= 10 V
500
675
MHz
C
CB O
Collector-base
Capacitance
I
E
= 0
f = 1 MHz
V
CB
= 5 V
2.3
4
pF
t
s
**
Storage Time
I
C
= 10 mA
I
B 1
=
V
CC
= 10 V
I
B2
= 10 mA
6
13
ns
t
o n
**
Turn-on Time
I
C
= 10 mA
I
B 1
= 3 mA
V
CC
= 3 V
9
12
ns
t
o f f
**
Turn-off Time
I
C
= 10 mA
I
B 1
= 3 mA
V
CC
= 3 V
I
B2
= 1.5 mA
13
18
ns
* Pulsed : pulse duration = 300
s, duty cycle = 1 %.
THERMAL DATA
R
t h j -c ase
R
t h j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
146
486
C/W
C/W
2N2369A
2/6
DC Current Gain.
Collector-emitter Saturation Voltage.
Contours of Constant Transition Frequency.
Collector-base and emitter-base capacitances.
Switching Characteristics.
Switching Characteristics.
2N2369A
3/6
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