2N2905A
2N2907A
GENERAL PURPOSE AMPLIFIERS AND SWITCHES
DESCRIPTION
The 2N2905A and 2N2907A are silicon planar
epitaxial PNP transistors in Jedec TO-39 (for
2N2905A) and in Jedec TO-18 (for 2N2907A)
metal case. They are designed for high speed
saturated
switching
and
general
purpose
applications.
INTERNAL SCHEMATIC DIAGRAM
November 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collect or-Base Voltage (I
E
= 0)
-60
V
V
CEO
Collect or-Emitt er Voltage (I
B
= 0)
-60
V
V
EBO
Emitt er-Base Voltage (I
C
= 0)
-5
V
I
C
Collect or Current
-0. 6
A
P
t ot
Total Dissipation at T
amb
25
o
C
for 2N2905A
for 2N2907A
at T
case
25
o
C
for 2N2905A
for 2N2907A
0.6
0.4
3
1.8
W
W
W
W
T
stg
St orage Temperature
-65 t o 200
o
C
T
j
Max. Operating Junction Temperature
200
o
C
TO-18
TO-39
2N2905A approved to CECC 50002-100,
2N2906A approved to CECC 50002-103
available on request.
1/7
THERMAL DATA
T O-39
TO -18
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
58. 3
292
97. 3
437.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CBO
Collect or Cut-off
Current (I
E
= 0)
V
CB
= -50 V
V
CB
= -50 V
T
c ase
= 150
o
C
-10
-10
nA
A
I
CEX
Collect or Cut-off
Current (V
BE
= -0.5V)
V
CE
= -30 V
-50
nA
I
BEX
Base Cut-off Current
(V
BE
= -0. 5V)
V
CE
= -30 V
-50
nA
V
( BR)CBO
Collect or-Base
Breakdown Volt age
(I
E
= 0)
I
C
= -10
A
-60
V
V
( BR)CEO
Collect or-Emitter
Breakdown Volt age
(I
B
= 0)
I
C
= -10 mA
-60
V
V
(BR)EBO
Emitt er-Base
Breakdown Volt age
(I
C
= 0)
I
E
= -10
A
-5
V
V
CE(sat )
Collect or-Emitter
Saturat ion Voltage
I
C
= -150 mA
I
B
= -15 mA
I
C
= -500 mA
I
B
= -50 mA
-0.4
-1.6
V
V
V
BE(s at)
Base-Emitt er
Saturat ion Voltage
I
C
= -150 mA
I
B
= -15 mA
I
C
= -500 mA
I
B
= -50 mA
-1.3
-2.6
V
V
h
FE
DC Current G ain
I
C
= -0.1 mA
V
CE
= -10 V
I
C
= -1 mA
V
CE
= -10 V
I
C
= -10 mA
V
CE
= -10 V
I
C
= -150 mA
V
CE
= -10 V
I
C
= -500 mA
V
CE
= -10 V
75
100
100
100
50
300
f
T
Transit ion F requency
V
CE
= -50 V
f = 100 MHz
I
C
= -20 mA
200
MHz
C
EBO
Emitt er Base
Capacitance
I
C
= 0
V
EB
= -2 V
f = 1MHz
30
pF
C
CBO
Collect or Base
Capacitance
I
E
= 0
V
CB
= -10 V
f = 1MHz
8
pF
t
d
Delay Time
V
CC
= -30 V
I
C
= -150 mA
I
B1
= -15 mA
10
ns
t
r
Rise Time
V
CC
= -30 V
I
C
= -150 mA
I
B1
= -15 mA
40
ns
t
s
St orage Time
V
CC
= -6 V
I
C
= -150 mA
I
B1
= -I
B2
= -15 mA
80
ns
t
f
Fall T ime
V
CC
= -6 V
I
C
= -150 mA
I
B1
= -I
B2
= -15 mA
30
ns
t
on
Turn-on T ime
V
CC
= -30 V
I
C
= -150 mA
I
B1
= -15 mA
45
ns
t
off
Turn-off T ime
V
CC
= -6 V
I
C
= -150 mA
I
B1
= -I
B2
= -15 mA
100
ns
Pulsed: Pulse duration = 300
s, duty cycle
1 %
See test circuit
2N2905A/2N2907A
2/7
Normalized DC Current Gain.
Collector-emitter Saturation Voltage.
Collector-base and Emitter-base capacitances.
Switching Characteristics.
2N2905A/2N2907A
3/7
PDF 
ZIP
