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Электронный компонент: 2N4036

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2N4036
October 1988
MEDIUM-SPEED SWITCH
The 2N4036 is a silicon planar epitaxial PNP tran-
sistor in Jedec TO-39 metal case. It is intended par-
ticularly as medium speed saturated switch and
general purpose amplifier.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Unit
V
CBO
Collector-base Voltage (I
E
= 0)
90
V
V
CEX
Collector-emitter Voltage (V
BE
= 1.5 V)
85
V
V
CER
Collector-emitter Voltage (R
BE
200
)
85
V
V
CEO
Collector-emitter Voltage (I
B
= 0)
65
V
V
EBO
Emitter-base Voltage (I
C
= 0)
6
V
I
C
Collector Current
1
A
I
B
Base Current
0.5
A
P
t o t
Total Power Dissipation at T
amb
25
C
at T
c as e
25
C
1
7
W
W
T
s t g
, T
j
Storage and Junction Temperature
65 to 200
C
DESCRIPTION
INTERNAL SCHEMATIC DIAGRAM
TO-39
1/5
ELECTRICAL CHARACTERISTICS (T
amb
= 25
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Mi n.
Typ.
Max.
Unit
I
CBO
Collector Cutoff Current
(I
E
= 0)
V
CB
= 60 V
20
nA
I
CEO
Collector Cutoff Current
(I
B
= 0)
V
CE
= 30 V
0.5
A
I
E BO
Emitter Cutoff Current
(I
C
= 0)
V
EB
= 5 V
20
nA
V(
BR)CB O
Collector-base Breakdown
Voltage (I
E
= 0)
I
C
= 100
A
90
V
V
( BR) CEX
*
Collector-emitter Breakdown
Voltage (V
BE
= 1.5 V)
I
C
= 10 mA
85
V
V
(BR)CE R
*
Collector-emitter Breakdown
Voltage (R
BE
= 200
)
I
C
= 10 mA
85
V
V
(BR)CE O
*
Collector-emitter Breakdown
Voltage (I
B
= 0)
I
C
= 10 mA
65
V
V
(B R)E BO
Emitter-base Breakdown Voltage
(I
C
= 0)
I
E
= 100
A
7
V
V
CE( sat )
*
Collector-emitter Saturation
Voltage
I
C
= 150 mA
I
B
= 15 mA
0.65
V
V
B E
*
Base-emitter Voltage
I
C
= 150 mA
V
CE
= 10 V
1.1
V
h
F E
*
DC Current Gain
I
C
= 0.1 mA
I
C
= 150 mA
I
C
= 500 mA
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
20
40
20
140
f
T
Transition Frequency
I
C
= 50 mA
f = 20 MHz
V
CE
= 10 V
60
MHz
C
EBO
Emitter-base Capacitance
I
C
= 0
f = 1 MHz
V
E B
= 0.5 V
90
pF
C
CBO
Collector-base Capacitance
I
E
= 0
f = 1 MHz
V
CB
= 10 V
30
pF
t
o n
**
Turn-on Time
I
C
= 150 mA
I
B1
= 15 mA
V
CC
= 30V
110
ns
t
o f f
**
Turn-off Time
I
C
= 150 mA
I
B1
= I
B2
=
V
CC
= 30 V
15 mA
700
ns
*
Pulsed : pulse duration = 300
s, duty cycle = 1 %.
** See test circuit.
THERMAL DATA
R
t h j- cas e
R
t h j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
25
175
C/W
C/W
2N4036
2/5
Test Circuit for t
on
, t
off
.
2N4036
3/5
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
12.7
0.500
B
0.49
0.019
D
6.6
0.260
E
8.5
0.334
F
9.4
0.370
G
5.08
0.200
H
1.2
0.047
I
0.9
0.035
L
45
o
(typ.)
L
G
I
D
A
F
E
B
H
TO39 MECHANICAL DATA
P008B
2N4036
4/5
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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2N4036
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