2N5038
HIGH CURRENT NPN SILICON TRANSISTOR
s
SGS-THOMSON PREFERRED SALESTYPE
s
NPN TRANSISTOR
DESCRIPTION
The 2N5038 is a silicon planar multiepitaxial NPN
transistors in Jedec TO-3 metal case. They are
especially intended for high current and switching
applications.
INTERNAL SCHEMATIC DIAGRAM
June 1997
1
2
TO-3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage (I
E
= 0)
150
V
V
CEX
Collector-Emitter Voltage (V
BE
=-1.5V R
BE
=100
)
150
V
V
CER
Collector-Emitter Voltage (R
BE
< 50
)
110
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
90
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
7
V
I
C
Collector Current
20
A
I
CM
Collector Peak Current
30
A
I
B
Base Current
5
A
P
tot
Total Dissipation at T
c
25
o
C
140
W
T
stg
Storage Temperature
-65 to 200
o
C
T
j
Max. Operating Junction Temperature
200
o
C
1/4
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
1.25
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEV
Collector Cut-off
Current (V
BE
= -1.5V)
V
CE
= 140 V
V
CE
= 100 V T
c
= 150
o
C
50
10
mA
mA
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 70 V
20
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 7 V
V
EB
= 5 V
50
5
mA
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
I
C
= 0.2 A
90
V
V
CER(sus)
Collector-Emitter
Sustaining Voltage
I
C
= 0.2 A R
BE
= 50
110
V
V
CEX(sus)
Collector-Emitter
Sustaining Voltage
I
C
= 0.2 A R
BE
= 100
V
BE
=-1.5V
150
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 12 A I
B
= 1.2 A
I
C
= 20 A I
B
= 5 A
1
2.5
V
V
V
BE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 20 A I
B
= 5 A
3.3
V
V
BE
Base-Emitter Voltage
I
C
= 12 A V
CE
= 5 V
1.8
V
h
FE
DC Current Gain
I
C
= 2 A V
CE
= 5 V
I
C
= 12 A V
CE
= 5 V
50
20
250
100
h
fe
Small Signal Current
Gain
I
C
= 2 A V
CE
= 10 V f = 5 MHz
12
C
CBO
Collector-Base
Capacitance
I
E
= 0 V
CB
= 10 V f = 1 MHz
300
pF
t
r
Rise Time
I
C
= 12 A V
CC
= 30 V
I
B1
= -I
B2
= 1.2A
0.5
s
t
s
Storage Time
1.5
s
t
f
Fall Time
0.5
s
I
s/b
Second Breakdown
Collector Current
V
CE
= 28 V
V
CE
= 45 V
5
0.9
A
A
E
s/b
Second Breakdown
Energy
V
BE
= -4 V R
BE
= 20
L = 180
H
13
mJ
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
2N5038
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
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. . .
2N5038
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