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Электронный компонент: 2N5195

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2N5195
MEDIUM POWER PNP SILICON TRANSISTOR
s
SGS-THOMSON PREFERRED SALESTYPE
s
PNP TRANSISTOR
APPLICATIONS
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N5195 is a silicon epitaxial-base PNP
transistor in Jedec SOT-32 plastic package.
It is inteded for use in medium power linear and
switching applications.
The complementary NPN type is 2N5192.
INTERNAL SCHEMATIC DIAGRAM
June 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
V
CBO
Collector-Base Voltage (I
E
= 0)
-80
V
V
CEO
Collector-Emit ter Voltage (I
B
= 0)
-80
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
-5
V
I
C
Collector Current
-4
A
I
CM
Collector Peak Current
-7
A
I
B
Base Current
-1
A
P
t ot
Tot al Dissipation at T
c
25
o
C
40
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. O perat ing Junction Temperature
150
o
C
3
2
1
SOT-32
1/5
THERMAL DATA
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
3.12
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CBO
Collect or Cut-off
Current (I
E
= 0)
V
CB
= rated V
CBO
-0.1
mA
I
CEX
Collect or Cut-off
Current (V
BE
= -1.5V)
V
CE
= rated V
CEO
V
CE
= rated V
CEO
T
c
= 125
o
C
-0.1
-2
mA
mA
I
CEO
Collect or Cut-off
Current (I
B
= 0)
V
CE
= rated V
CEO
-1
mA
I
EBO
Emitt er Cut-off Current
(I
C
= 0)
V
EB
= -5 V
-1
mA
V
CEO(sus )
Collect or-Emitter
Sustaining Voltage
I
C
= -100 mA
-80
V
V
CE(sat )
Collect or-Emitter
Saturat ion Voltage
I
C
= -1.5 A
I
B
= -0.15 A
I
C
= -4 A
I
B
= -1 A
-0.6
-1.2
V
V
V
BE
Base-Emitt er Voltage
I
C
= -1.5 A
V
CE
= -2 V
-1.2
V
h
FE
DC Current G ain
I
C
= -1.5 A
V
CE
= -2 V
I
C
= -4 A
V
CE
= -2 V
20
7
80
f
T
Transit ion f requency
I
C
= -1 A
V
CE
= -10 V
2
MHz
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
Safe Operating Area
Derating Curves
2N5195
2/5
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
2N5195
3/5
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
7.4
7.8
0.291
0.307
B
10.5
10.8
0.413
0.445
b
0.7
0.9
0.028
0.035
b1
0.49
0.75
0.019
0.030
C
2.4
2.7
0.040
0.106
c1
1.0
1.3
0.039
0.050
D
15.4
16.0
0.606
0.629
e
2.2
0.087
e3
4.15
4.65
0.163
0.183
F
3.8
0.150
G
3
3.2
0.118
0.126
H
2.54
0.100
H2
2.15
0.084
H2
0016114
SOT-32 (TO-126) MECHANICAL DATA
2N5195
4/5
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
2N5195
5/5