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Электронный компонент: 2N5416

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2N3439
2N3440
SILICON NPN TRANSISTORS
s
SGS-THOMSON PREFERRED SALESTYPES
s
NPN TRANSISTOR
DESCRIPTION
The 2N3439, 2N3440 are silicon epitaxial planar
NPN transistors in jedec TO-39 metal case
designed for use in consumer and industrial
line-operated applications.
These devices are particularly suited as drivers in
high-voltage low current inverters, switching and
series regulators.
INTERNAL SCHEMATIC DIAGRAM
June 1997
TO-39
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
2N3439
2N3440
V
CBO
Collector-Base Voltage (I
E
= 0)
450
300
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
350
250
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
7
V
I
C
Collector Current
1
A
I
B
Base Current
0.5
A
P
tot
Total Dissipation at T
c
25
o
C
10
W
P
tot
Total Dissipation at T
amb
50
o
C
1
W
T
stg
Storage Temperature
-65 to 200
o
C
T
j
Max. Operating Junction Temperature
200
o
C
1/4
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
17.5
175
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
for 2N3439 V
CB
= 360 V
for 2N3440 V
CB
= 250 V
20
20
A
A
I
CEO
Collector Cut-off
Current (I
B
= 0)
for 2N3439 V
CE
= 300 V
for 2N3440 V
CE
= 200 V
20
50
A
A
I
CEX
Collector Cut-off
Current (V
BE
= -1.5V)
for 2N3439 V
CE
= 450 V
for 2N3440 V
CE
= 300 V
500
500
A
A
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 6 V
20
A
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
I
C
= 50 mA
for 2N3439
for 2N3440
350
250
V
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 50 mA I
B
= 4 mA
0.5
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 50 mA I
B
= 4 mA
1.3
V
h
FE
DC Current Gain
I
C
= 20 mA V
CE
= 10 V
I
C
= 2 mA V
CE
= 10 V for 2N3439
40
30
160
h
FE
Small Signal Current
Gain
I
C
= 5 mA V
CE
= 10 V f = 1KHz
25
f
T
Transition frequency
I
C
= 5 mA V
CE
= 10 V f = 5MHz
15
MHz
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
2N3439 / 2N3440
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
12.7
0.500
B
0.49
0.019
D
6.6
0.260
E
8.5
0.334
F
9.4
0.370
G
5.08
0.200
H
1.2
0.047
I
0.9
0.035
L
45
o
(typ.)
L
G
I
D
A
F
E
B
H
P008B
TO-39 MECHANICAL DATA
2N3439 / 2N3440
3/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
2N3439 / 2N3440
4/4